本文選題：時(shí)域熱反射法　切入點(diǎn)：低溫系統(tǒng)　出處：《工程熱物理學(xué)報(bào)》2017年07期

【摘要】：低溫條件下碳化硅等半導(dǎo)體材料熱導(dǎo)率的實(shí)驗(yàn)研究極少,數(shù)據(jù)匱乏,無法滿足理論模型的優(yōu)化需求。現(xiàn)有實(shí)驗(yàn)測量以接觸式的穩(wěn)態(tài)法導(dǎo)熱系數(shù)測量為主,實(shí)驗(yàn)誤差大,且低溫測量成本過高。本文通過常規(guī)飛秒激光抽運(yùn)探測熱反射法與低溫系統(tǒng)的有機(jī)結(jié)合,完成了4~300 K低溫條件下單晶碳化硅熱導(dǎo)率的測試及其隨溫度的變化規(guī)律,研究表明單晶碳化硅熱導(dǎo)率在100 K左右存在極大值,溫度低于100 K時(shí)其熱導(dǎo)率與溫度呈正相關(guān),溫度高于100 K時(shí)其熱導(dǎo)率與溫度呈負(fù)相關(guān)。極值點(diǎn)的位置與理論值的偏差可能是由于樣品電子濃度、缺陷分布等因素影響。
[Abstract]:There are few experimental studies on thermal conductivity of silicon carbide and other semiconductor materials at low temperature, and the data are scarce and can not meet the requirements of the optimization of theoretical models. The existing experimental measurements are mainly based on the contact steady-state thermal conductivity measurement, and the experimental errors are large. The low temperature measurement cost is too high. By combining the conventional femtosecond laser pumped detection thermal reflection method with the low temperature system, the thermal conductivity of single crystal silicon carbide at low temperature of 4 ~ 300K and its variation law with temperature have been measured. The results show that the thermal conductivity of single crystal silicon carbide is maximum at 100 K, and the thermal conductivity is positively correlated with the temperature when the temperature is lower than 100 K. When the temperature is higher than 100K, the thermal conductivity is negatively correlated with the temperature, and the deviation between the position of the extreme point and the theoretical value may be due to the influence of the electron concentration of the sample, the distribution of defects, and so on.
【作者單位】： 中國科學(xué)院工程熱物理研究所;中國科學(xué)院大學(xué);中國石油大學(xué)(華東)儲運(yùn)與建筑工程學(xué)院;大連理工大學(xué)海洋能源利用與節(jié)能教育部重點(diǎn)實(shí)驗(yàn)室;
【基金】：國家自然科學(xué)基金資助項(xiàng)目(No.51606193,No.51336009)
【分類號】：TN304.24
，

本文編號：1692381