本文選題：時域熱反射法　切入點：低溫系統(tǒng)　出處：《工程熱物理學報》2017年07期

【摘要】：低溫條件下碳化硅等半導體材料熱導率的實驗研究極少,數據匱乏,無法滿足理論模型的優(yōu)化需求�，F(xiàn)有實驗測量以接觸式的穩(wěn)態(tài)法導熱系數測量為主,實驗誤差大,且低溫測量成本過高。本文通過常規(guī)飛秒激光抽運探測熱反射法與低溫系統(tǒng)的有機結合,完成了4~300 K低溫條件下單晶碳化硅熱導率的測試及其隨溫度的變化規(guī)律,研究表明單晶碳化硅熱導率在100 K左右存在極大值,溫度低于100 K時其熱導率與溫度呈正相關,溫度高于100 K時其熱導率與溫度呈負相關。極值點的位置與理論值的偏差可能是由于樣品電子濃度、缺陷分布等因素影響。
[Abstract]:There are few experimental studies on thermal conductivity of silicon carbide and other semiconductor materials at low temperature, and the data are scarce and can not meet the requirements of the optimization of theoretical models. The existing experimental measurements are mainly based on the contact steady-state thermal conductivity measurement, and the experimental errors are large. The low temperature measurement cost is too high. By combining the conventional femtosecond laser pumped detection thermal reflection method with the low temperature system, the thermal conductivity of single crystal silicon carbide at low temperature of 4 ~ 300K and its variation law with temperature have been measured. The results show that the thermal conductivity of single crystal silicon carbide is maximum at 100 K, and the thermal conductivity is positively correlated with the temperature when the temperature is lower than 100 K. When the temperature is higher than 100K, the thermal conductivity is negatively correlated with the temperature, and the deviation between the position of the extreme point and the theoretical value may be due to the influence of the electron concentration of the sample, the distribution of defects, and so on.
【作者單位】： 中國科學院工程熱物理研究所;中國科學院大學;中國石油大學(華東)儲運與建筑工程學院;大連理工大學海洋能源利用與節(jié)能教育部重點實驗室;
【基金】：國家自然科學基金資助項目(No.51606193,No.51336009)
【分類號】：TN304.24
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本文編號：1692381