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鍺單晶切割片中缺陷的表面腐蝕研究

發(fā)布時間:2018-03-21 00:13

  本文選題:鍺片 切入點:腐蝕速率 出處:《浙江理工大學》2017年碩士論文 論文類型:學位論文


【摘要】:鍺單晶在紅外以及太陽能航空航天都有廣泛應用。對鍺單晶表面的平整度要求也不斷提高,對內部的位錯數(shù)量也有要求。直拉單晶技術直接決定鍺錠內部的位錯密度,鍺錠的切割加工過程決定鍺片表面質量,鍺片的品質又影響著性能。因此研究鍺單晶片表面的損傷層,位錯等缺陷對改進鍺單晶的性能與加工有重要意義,F(xiàn)階段主要通過HNO_3-HF體系的腐蝕液拋光鍺單晶片,必須先腐蝕拋光,后用擇優(yōu)腐蝕顯示位錯,其存在著步驟多、反應自催化不可控、污染大的問題。本文主要研究內容為尋找一種新型的優(yōu)良腐蝕劑來顯示鍺單晶片的位錯,通過觀察、計算位錯密度來正確評價鍺單晶片的表面質量,并通過截面腐蝕再用電鏡觀察來測量獲得其損傷層信息。通過定性分析,在多種氧化劑中選擇了高錳酸鉀作為腐蝕液中的氧化劑,并分析了超聲對于鍺片腐蝕的影響,結果表明在長時間超聲時鍺片表面會受到損傷,不能很好的應用于該體系加快反應。通過定性分析,得出氫氟酸必須加入的結論。在后續(xù)實驗中根據(jù)酸性腐蝕原理,提高氫氟酸的量,使腐蝕后鍺片表面平整并能顯示位錯。后對腐蝕溫度進行研究,配比相同時,在溫度較低時,腐蝕后的鍺片表面粗糙無光亮;溫度升到一定量時,腐蝕速率開始提升,表面平整度也開始變好,但溫度過高時,鍺片表面平整度又會下降。對腐蝕液配比研究發(fā)現(xiàn),腐蝕液配比對于鍺片腐蝕也有很大影響。這和腐蝕時包含兩個過程有關。通過對腐蝕時間的研究,研究表明在腐蝕120 min后鍺片的粗糙度不再明顯變化,形貌上也趨于穩(wěn)定。最后得到V(KMnO_4):V(HF):V(H_2SO_4)為10:9:1,其中KMnO_4濃度為0.4 mol/L、氫氟酸分析純、H_2SO_4濃度為4 mol/L時,腐蝕溫度60°C,腐蝕時間120 min后能很好拋光并顯示位錯。最后利用研究的腐蝕液腐蝕鍺片,計算位錯。解離鍺片腐蝕后通過電鏡觀察截面可以觀察到鍺片的損傷層,通過測量得出其損傷層厚度。綜合鍺片表面的位錯密度和損傷層厚度,可以較為系統(tǒng)的了解鍺片的表面質量,從而促進其生產(chǎn)、加工工藝的改進。
[Abstract]:Germanium single crystals are widely used in infrared and solar aerospace. The flatness of germanium single crystal surface and the number of internal dislocations are also increased. Czochralski single crystal technology directly determines the dislocation density in germanium ingot. The cutting process of germanium ingot determines the surface quality of germanium wafer, and the quality of germanium wafer affects the properties of germanium wafer. Dislocations and other defects are of great significance in improving the performance and processing of germanium single crystals. At this stage, it is necessary to corrode and polish germanium single crystals mainly through corrosion solution of HNO_3-HF system, and then display dislocations with preferential corrosion, which has many steps. The main content of this paper is to find a new kind of excellent etchant to display the dislocation of germanium monocrystalline wafer. By observing and calculating dislocation density, the surface quality of germanium single crystal wafer can be correctly evaluated. The damage layer information was measured by electron microscope. Through qualitative analysis, potassium permanganate was selected as the oxidant in the corrosion solution, and the effect of ultrasonic on the corrosion of germanium sheet was analyzed. The results show that the surface of germanium sheet will be damaged after a long time of ultrasonic, so it can not be applied to the system to accelerate the reaction. By qualitative analysis, it is concluded that hydrofluoric acid must be added. In the subsequent experiments, according to the principle of acid corrosion, By increasing the amount of hydrofluoric acid, the surface of the etched germanium sheet is flat and the dislocation can be displayed. Then the corrosion temperature is studied. When the ratio is the same, the surface of the etched germanium sheet is rough and has no brightness when the temperature is lower, and when the temperature rises to a certain amount, The corrosion rate began to increase and the surface smoothness began to improve, but when the temperature was too high, the surface smoothness of germanium wafer would decrease again. The ratio of corrosion solution also has a great influence on the corrosion of germanium sheet, which is related to the two processes involved in the corrosion. Through the study of corrosion time, it is shown that the roughness of germanium sheet does not change obviously after corrosion for 120 min. Finally, it was found that VKMnO _ 4: V _ 2O _ 4 / V _ S _ 2SO _ 4) was 10: 9: 1, in which the concentration of KMnO_4 was 0.4 mol / L, the concentration of hydrofluoric acid was 4 mol/L, the corrosion temperature was 60 擄C, the corrosion time was 120 min, and the dislocations could be displayed. The damage layer of germanium sheet can be observed by electron microscope after corrosion. The thickness of damage layer can be obtained by measuring the thickness of the damage layer. We can systematically understand the surface quality of germanium sheet, thus promoting the improvement of production and processing technology.
【學位授予單位】:浙江理工大學
【學位級別】:碩士
【學位授予年份】:2017
【分類號】:TN304.11

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