發(fā)布時(shí)間：2018-03-20 01:16

  本文選題：二維半導(dǎo)體　切入點(diǎn)：二硫化鉬　出處：《科學(xué)通報(bào)》2017年33期 　論文類型：期刊論文

【摘要】：二維過(guò)渡金屬硫族化合物納米材料由于是不同帶隙的半導(dǎo)體,同時(shí)有些在地球上儲(chǔ)量豐富,受到人們廣泛的關(guān)注.在本文中,介紹了用于二維材料場(chǎng)效應(yīng)晶體管制備的光刻圖形轉(zhuǎn)移技術(shù).該方法可以低成本、簡(jiǎn)單、有效地獲得晶體管,同時(shí)對(duì)二維材料的損傷較小,可以獲得高性能的二維材料晶體管;其次,介紹了Co摻雜MoS_2雙層納米片的生長(zhǎng)及電學(xué)輸運(yùn)研究,可以通過(guò)控制生長(zhǎng)過(guò)程中硫的濃度來(lái)改變納米片的形貌,隨著溫度的升高,最終可以獲得CoS_2/MoS_2六邊形結(jié)構(gòu),電學(xué)測(cè)試表明Co摻雜MoS_2雙層納米片顯n型,而CoS_2/MoS_2六邊形結(jié)構(gòu)具有很高的電導(dǎo)率;還介紹了垂直雙層SnS_2/MoS_2異質(zhì)結(jié)的氣相生長(zhǎng)及光電性能研究,這種異質(zhì)結(jié)具有很大的帶階,能帶結(jié)構(gòu)呈現(xiàn)Ⅱ型,在異質(zhì)結(jié)區(qū)域,出現(xiàn)了強(qiáng)烈的光致發(fā)光譜淬滅,這種異質(zhì)結(jié)與相應(yīng)的單體材料相比,具有增強(qiáng)的光電性能.最后,對(duì)二維材料的未來(lái)研究進(jìn)行一些展望.
[Abstract]:Two-dimensional transition metal sulfur compounds nanomaterials are widely concerned because they are semiconductors with different band gaps and some of them are abundant on earth. The photolithographic pattern transfer technique used in the fabrication of two-dimensional material field effect transistors is introduced. This method can obtain transistors with low cost, simplicity and efficiency. At the same time, it has less damage to two-dimensional materials and can obtain high performance two-dimensional material transistors. Secondly, the growth and electrical transport of Co doped MoS_2 bilayer nanocrystals are introduced. The morphology of MoS_2 nanowires can be changed by controlling the concentration of sulfur in the growth process. With the increase of temperature, the hexagonal structure of CoS_2/MoS_2 can be obtained. The electrical tests show that the Co doped MoS_2 bilayer nanocrystals exhibit n-type, while the CoS_2/MoS_2 hexagonal structure has high conductivity. The gas phase growth and optoelectronic properties of the perpendicular bilayer SnS_2/MoS_2 heterostructures are also introduced. The heterostructure has a large band order. The band structure is of type 鈪，

本文編號(hào)：1636858