發(fā)布時(shí)間：2018-03-11 10:36

  本文選題：氮化硅薄膜　切入點(diǎn)：等離子體增強(qiáng)型化學(xué)氣相沉積　出處：《電子科技大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：氮化硅薄膜具有優(yōu)良的光電性能和機(jī)械性能,在集成電路、微機(jī)械電子、太陽能電池以及顯示器件領(lǐng)域都有著廣泛的應(yīng)用。等離子體增強(qiáng)化學(xué)氣相沉積(PECVD)因其沉積效率高、薄膜均勻性好且可靈活操作的優(yōu)勢成為制備氮化硅薄膜的主要方法之一。但是,PECVD制備的氮化硅薄膜都具有一定的應(yīng)力,較大的應(yīng)力會導(dǎo)致器件性能的下降。同時(shí)在單片集成非制冷紅外探測器等MEMS器件中,氮化硅薄膜分別作為結(jié)構(gòu)支撐層、電學(xué)絕緣層以及敏感材料鈍化層。這不僅需要薄膜具有較低的應(yīng)力以減小橋面的形變,還要求薄膜具有足夠低的熱導(dǎo)和良好的絕緣性能。因此有必要對所制備的氮化硅薄膜的特性,特別是熱學(xué)參數(shù)進(jìn)行精確的測量和分析。本文系統(tǒng)地研究了PECVD的工藝參數(shù)對薄膜性能的影響。通過高低混頻PECVD工藝制備了較低應(yīng)力的氮化硅薄膜。此外,通過組合不同工藝參數(shù)獲得滿足不同性能需求的氮化硅薄膜。其次,本文設(shè)計(jì)了專門的熱學(xué)測試微結(jié)構(gòu)并通過微細(xì)加工工藝制得相應(yīng)器件。通過對磁控濺射基片夾具裝置的改進(jìn)實(shí)現(xiàn)了不同尺寸襯底鍍膜的需求。還對光刻工藝中犧牲層厚度的控制做了系統(tǒng)研究,表明犧牲層的厚度受旋涂機(jī)轉(zhuǎn)速和光刻膠濃度共同控制,對以后的實(shí)際操作具有指導(dǎo)意義。最后,本文為了克服宏觀工藝對氮化硅薄膜性能的影響局限于具體設(shè)備、可移植性差的缺點(diǎn),嘗試從微觀角度理解PECVD氮化硅薄膜成膜機(jī)理,設(shè)計(jì)了簡易等離子體診斷系統(tǒng)。以期通過郎繆爾探針獲得等離子體參數(shù),研究PECVD宏觀工藝參數(shù)和微觀等離子體參數(shù)之間關(guān)系,最終從微觀角度解釋PECVD工藝對薄膜性能影響機(jī)理。
[Abstract]:Silicon nitride thin films have been widely used in integrated circuits, micromechanical electronics, solar cells and display devices because of their excellent photoelectric and mechanical properties. Plasma enhanced chemical vapor deposition (PECVD) has high deposition efficiency. The advantages of good uniformity and flexible operation have become one of the main methods for preparing silicon nitride films, but the silicon nitride films prepared by PECVD have some stress. At the same time, silicon nitride film is used as the structure supporting layer in MEMS devices such as monolithic integrated uncooled infrared detectors. Electrical insulators and passivated layers of sensitive materials. This not only requires the thin film to have a lower stress to reduce the deformation of the bridge deck, The film is also required to have a sufficiently low thermal conductivity and good insulation. It is therefore necessary to study the properties of the silicon nitride films prepared, In this paper, the influence of PECVD process parameters on the properties of thin films is systematically studied. Silicon nitride thin films with low stress are prepared by high and low mixing PECVD process. Silicon nitride films can be obtained by combining different process parameters. Secondly, In this paper, a special thermal testing microstructure is designed and the corresponding devices are fabricated by micromachining. By improving the device of substrate clamp for magnetron sputtering, the requirements of coating on different sizes of substrates are realized. The control of the thickness of the layer is studied systematically. It is indicated that the thickness of the sacrificial layer is controlled by the rotating speed of the spin-coating machine and the concentration of the photoresist, which is of guiding significance to the practical operation in the future. Finally, in order to overcome the influence of the macroscopic process on the performance of the silicon nitride film, the paper is limited to the specific equipment. In order to obtain plasma parameters by Langmuir probe, a simple plasma diagnostic system was designed to understand the film forming mechanism of PECVD silicon nitride film from microcosmic point of view. The relationship between the macroscopical process parameters of PECVD and the microcosmic plasma parameters is studied. Finally, the mechanism of the effect of PECVD process on the film properties is explained from the microscopic point of view.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TB383.2;TN304.055

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本文編號：1597789