本文選題：二維材料　切入點：黑磷　出處：《東華大學》2017年碩士論文　論文類型：學位論文

【摘要】：自從二維材料被發(fā)現(xiàn)以來,因為其在電子器件以及光子器件的應用方面存在極大的潛能,引起了人們的廣泛研究。二維材料具有獨特的物理性質(zhì),如二維電子氣的超導現(xiàn)象與各向異性的傳輸特性等等,并且在他們的多層結(jié)構(gòu)中也有這種現(xiàn)象。本文簡單闡述了一些二維材料的電學性質(zhì)與光學性質(zhì)的研究現(xiàn)狀,并且在之后結(jié)合泊松方程與電子/空穴連續(xù)方程,以及漂移擴散方程,討論了二維材料黑磷場效應晶體管的雙極性電學特性,最后用時域有限差分法討論了單層黑磷器件的太赫茲輻射吸收的性質(zhì)。論文的主要內(nèi)容如下:第一,本文首先考慮了塊材的黑磷場效應晶體管,當肖特基勢壘相對于電子和空穴相同時,隨溝道長度的變化,黑磷場效應晶體管的雙極性特性的變化規(guī)律。得到了黑磷的場效應晶體管雙極性特性隨溝道長度變短而變得更加明顯的結(jié)論。之后通過分析對比具有100nm溝道長度以及2μm溝道長度的晶體管的能帶圖,得到了黑磷場效應晶體管的雙極性轉(zhuǎn)換機制與溝道長度有關(guān)并且受肖特基勢壘高度影響的結(jié)論。第二,接下來討論了黑磷的層數(shù)厚度以及肖特基勢壘高度對黑磷場效應晶體管的雙極性的影響。當肖特基勢壘相對于電子與空穴相同時,不同層數(shù)黑磷的場效應晶體管雙極性特性都隨溝道長度變短而變得更加明顯。與此同時輸出飽和電流隨黑磷的層數(shù)厚度增加而增加。之后研究分析了黑磷場效應晶體管的電勢分布與電子濃度分布。并由此討論了肖特基勢壘高度,黑磷層數(shù)厚度,以及器件溝道長度如何影響輸出特性,包括載流子注入與雙極性特性。第三,研究了當改變肖特基勢壘高度時,不同層數(shù)厚度與不同溝道長度的黑磷場效應晶體管的雙極性變化規(guī)律。得到當不同層數(shù)的晶體管的肖特基勢壘高度相對空穴均為0.24e V時,單層的黑磷晶體管呈單極性特性,并且隨黑磷層數(shù)的增加,電流開關(guān)比可以從1010變化到103。第四,研究了一種具有納米帶結(jié)構(gòu)的單層黑磷器件,并通過數(shù)值計算證明,在納米結(jié)構(gòu)的單層的黑磷中可以激發(fā)局域表面等離子體。并討論了納米帶結(jié)構(gòu)的單層黑磷在太赫茲范圍內(nèi)的光學吸收譜與透射譜。然后研究了黑磷納米帶寬度對共振頻率與吸收率的關(guān)系。發(fā)現(xiàn)隨著黑磷納米帶的寬度變大當器件的太赫茲輻射的吸收峰值產(chǎn)生的頻率即共振頻率逐漸變小。最后討論了入射光的偏振對等離子振蕩的影響。得到了單層黑磷納米帶器件的共振頻率位置基本不隨入射光的偏振方向而改變,但是吸收率的峰值隨入射光的偏振方向有較明顯的變化,隨著偏振角度的增大吸收率逐漸減小。
[Abstract]:Since the discovery of two-dimensional materials, due to their great potential in the applications of electronic devices and photonic devices, they have attracted extensive research. For example, the superconducting phenomena and anisotropic propagation characteristics of two-dimensional electron gas, and so on, are also found in their multilayer structures. In this paper, the present situation of the study on the electrical and optical properties of some two-dimensional materials is briefly described. After that, the bipolar electrical properties of the two dimensional black phosphorus field effect transistors are discussed by means of Poisson equation, electron / hole continuum equation and drift diffusion equation. Finally, the properties of terahertz radiation absorption of monolayer black phosphorus devices are discussed by using the finite-difference time-domain method. The main contents of this paper are as follows: firstly, the black phosphorus field effect transistors are considered in this paper. When the Schottky barrier is the same as the electron and hole, it varies with the channel length. It is concluded that the bipolar characteristics of black phosphorus field-effect transistors become more obvious as the channel length becomes shorter. Then, by analyzing and comparing the bipolar characteristics of black phosphorus field-effect transistors with 100nm channel length, we obtain the conclusion that the bipolar characteristics of black phosphorus field-effect transistors become more obvious with shorter channel length. And the energy band diagram of the 2 渭 m channel length transistor, It is concluded that the bipolarity conversion mechanism of black phosphorus field effect transistors is related to channel length and affected by Schottky barrier height. The influence of the thickness of the black phosphorus layer and the Schottky barrier height on the bipolarity of the black phosphorus field effect transistor is discussed. When the Schottky barrier is the same as the electron hole, The bipolar characteristics of different layers of black phosphorus transistors become more obvious with the channel length becoming shorter. At the same time, the output saturation current increases with the increase of the layer thickness of black phosphorus. The field effect of black phosphorus is studied and analyzed. The potential distribution and electron concentration distribution of transistors are discussed, and the Schottky barrier height is discussed. The thickness of the black phosphorus layer and the channel length of the device affect the output characteristics, including carrier injection and bipolar characteristics. Thirdly, when the Schottky barrier height is changed, The bipolarity of black phosphorus field-effect transistors with different layer thickness and channel length is obtained. When the Schottky barrier height of different layers is 0.24e V, the single-layer black phosphorus transistors are unipolar. With the increase of the number of black phosphorus layers, the current-switching ratio can be changed from 1010 to 103. 4th. A kind of monolayer black phosphorus device with nanobandle structure is studied, and the numerical results show that the current switching ratio can be changed from 1010 to 103. 4th. Local surface plasmas can be excited in black phosphorus monolayer of nanostructures. The optical absorption and transmission spectra of black phosphorus monolayers with nanobelts in terahertz range are discussed. The relationship between resonance frequency and absorptivity. It is found that as the width of black phosphorus nanobelts increases as the absorption peak of terahertz radiation of the device becomes smaller, the resonance frequency is gradually reduced. Finally, the polarization of incident light to plasma is discussed. It is obtained that the resonance frequency position of the monolayer black phosphorus nanostrip device basically does not change with the polarization direction of the incident light. However, the peak absorptivity varies obviously with the polarization direction of the incident light, and decreases with the increase of the polarization angle.
【學位授予單位】：東華大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN386

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