本文選題：硒化鉬　切入點：納米片　出處：《合肥工業(yè)大學》2017年碩士論文　論文類型：學位論文

【摘要】：基于二維過渡金屬硫屬化合物(TMDs)材料的制備及電子結構和光學特性的研究推動了二維光電探測器的研究,光電轉換的研究進展更進一步地實現(xiàn)了超敏感、寬光譜響應光電探測器的構建,卻面臨增大受光面積,提高響應速度等主要挑戰(zhàn)。本文選取二維(2D) TMDs半導體系列材料中硒化鉬(MoSe_2)作為研究對象,通過控制材料合成、器件優(yōu)化等實現(xiàn)了高速、低價值二維MoSe_2異質結光電近紅外探測器的構建,主要的研究成果如下:(1)基于溶液法合成的二維MoSe_2納米片(NSs),利用相互交疊的納米片能夠調整能帶結構,采用簡單滴涂或旋涂方法設計了新型MoSe_2/Si范德瓦爾斯異質結(vdWH)光電探測器(PDs)。研究表明,在零偏壓下,器件具有優(yōu)異的可見光-近紅外光電響應特性,響應速度達～30ns,預測出的3dB帶寬高達32 MHz,探測率達1.2×1012 Jones,噪聲等效電流接近于0.1 pA·Hz-1/2。。(2)首次利用脈沖激光沉積方法(PLD)在Si襯底上原位沉積大面積高晶體質量二維MoSe_2薄膜,選取石墨烯做為上電極構建了 n-nSi/MoSe_2垂直異質結(vH)。這種原位的制備方法實現(xiàn)了薄膜的垂直生長同時還減少了界面態(tài)的影響,使得器件具有超快的響應速度(≈71ns),快于當前報道的二維TMD光電探測器響應速度。此外,該探測器能夠實現(xiàn)從400 nm-1000 nm的寬光譜探測,并且有著高達6.1×1012 Jones的探測率和超過132 dB的線性動態(tài)范圍。以上研究表明,新型2D-3D異質結的構建方法為實現(xiàn)高速、大面積、低價值光電探測器的制備提供了新的途徑。
[Abstract]:The preparation, electronic structure and optical properties of two-dimensional transition metal compounds (TMDs) have promoted the research of two-dimensional photodetectors. The research progress of photoelectric conversion has further achieved hypersensitivity. The construction of wide spectral response photodetectors is faced with major challenges such as increasing the area of light receiving and improving the response speed. In this paper, molybdenum molybdenum selenide (MoS) 2) is selected as the research object, and the synthesis of the materials is controlled by controlling the synthesis of the materials. High speed, low value two-dimensional MoSe_2 heterojunction photovoltaic near infrared detectors have been constructed by device optimization. The main research results are as follows: 1) Two-dimensional MoSe_2 nanoliths synthesized by solution method can adjust the energy band structure by using overlapping nanocrystals. A novel MoSe_2/Si van der Waals heterojunction photodetector has been designed by using simple drop coating or spin-coating method. It is shown that the device has excellent photo-optical response characteristics under zero bias voltage. The response speed is up to 30 ns, the predicted 3dB bandwidth is as high as 32 MHz, the detectivity is 1.2 脳 1012 Jones, the noise equivalent current is close to 0.1 Pa 路Hz-1 / 2.2.2.) for the first time, a large area of high crystal quality two-dimensional MoSe_2 thin films are deposited on Si substrates by pulsed laser deposition method. Using graphene as the upper electrode, n-nSi / MoSe2 vertical heterojunction (VH) was constructed. The in situ preparation method realized the vertical growth of the films and reduced the influence of the interfacial states. The device has an ultra-fast response speed (鈮，

本文編號：1592934