本文選題：輻射效應　切入點：FinFET　出處：《西安電子科技大學》2015年碩士論文　論文類型：學位論文

【摘要】：隨著國防軍事事業(yè)的快速發(fā)展,核輻射環(huán)境問題也越來越復雜而廣泛存在,器件和系統(tǒng)的可靠性越來越被重視,因此,從長遠來看,抗輻射問題必然要成為整個電子技術的一個基礎,而對整個電子技術產(chǎn)生影響。例如,在對新電子器件的研制過程中,一開始就應該考慮到輻射的問題;而對于電子系統(tǒng)的設計,在設計開始時就要考慮如何提高抗輻射能力,這將成為一個設計原則。而由于難以在實驗室中得到空間中各種真實的輻射環(huán)境,所以有必要對輻射效應的模擬仿真做深入研究,從而解決真實實驗所不能解決的問題,模擬所得到的結果一樣可以對器件或系統(tǒng)設計提供一定的數(shù)據(jù)參考。本文從輻射效應的角度出發(fā),對影響器件正常工作的總劑量效應、單粒子翻轉(zhuǎn)效應和瞬時輻射效應進行了研究,取得了下面三方面的研究成果:1、介紹了SOI FinFET器件的結構,并通過Silvaco TCAD對其進行了建模和仿真,研究了器件閾值電壓隨輻射劑量的影響,對比了寬Fin器件與窄Fin器件處在相同的輻射劑量下的閾值電壓的漂移程度,由仿真結果可知:(1)當以200krad(Si)的輻射劑量入射時,SOI FinFET器件閾值電壓的漂移現(xiàn)象就已經(jīng)變的非常明顯了,而當以超過400krad(Si)的輻射劑量入射時,SOI FinFET器件的閾值電壓漂移量則逐漸趨于平緩;(2)當輻射劑量達到200 krad(Si)時,寬Fin器件的閾值電壓就已經(jīng)有了較大的漂移,幾乎達到了窄Fin器件的4倍。2、研究了單粒子翻轉(zhuǎn)的機理,電荷的收集模式,并繼續(xù)基于Silvaco TCAD對SOI FinFET器件進行了單粒子翻轉(zhuǎn)效應的仿真模擬,得到了漏極電流隨時間的變化關系,并以Messenger提出的經(jīng)典的雙指數(shù)曲線模型為原型,通過最小二乘法擬合,得到了單粒子翻轉(zhuǎn)效應的電流脈沖表達式,并將其帶入用Cadence軟件所畫的基于SOI Fin FET的6T SRAM存儲單元,從而進行電路模擬,得到了令此存儲單元產(chǎn)生翻轉(zhuǎn)的LET范圍在40MeV·cm2/mg到50MeV·cm2/mg之間。3、對瞬時輻射效應和單粒子效應進行了區(qū)分,并簡要介紹了蒙特卡羅工具包Geant4的內(nèi)核結構和主要功能模塊,并針對瞬時輻射效應、FinFET結構和粒子能量所對應的物理模型,對Geant4程序進行了編寫;研究了瞬時輻射效應產(chǎn)生電流脈沖的模型,并將其帶入用Cadence軟件所畫的基于SOI FinFET的6T SRAM中,從而模擬瞬時輻射效應,得到了令此存儲單元產(chǎn)生翻轉(zhuǎn)的電流峰值閾值為0.991mA,然后通過使用假定的電流脈沖模型,得到了SOI FinFET結構被質(zhì)子(30MeV)、負電子(50keV)、X射線(10keV)分別從器件正向和背向入射時的“粒子數(shù)量閾值”,從而得出對于SOI FinFET結構抗質(zhì)子和X射線瞬時輻射時,應該正面加固強于背面加固,而對于抗負電子瞬時輻射時,背面加固應該強于正面加固的結論;接著又對比了SOI FinFET結構和體硅FinFET結構的抗瞬時輻射能力,得到了SOI FinFET結構的抗瞬時輻射能力要遠遠好于體硅FinFET結構的結論。最后,通過考慮粒子入射的真實情況還有器件本身的雙極放大效應后,對本文假定的瞬時輻射效應產(chǎn)生的電流脈沖模型進行了解釋說明。
[Abstract]:With the rapid development of national defense and military industry, nuclear radiation environmental problems become more and more complex and widely exist, the reliability of devices and systems more and more attention, therefore, in the long run, anti radiation problem is bound to become a foundation of the electronic technology, the electronic technology and the impact. For example, in the development process the new electronic devices in the beginning should consider the issue of radiation; and for the design of electronic system, we must consider how to improve the anti radiation ability in the design at the beginning, it will become a design principle. And because of the difficulty to get the real space radiation environment in the laboratory, it is necessary to study of simulation on radiation effects, so as to solve the real problems that cannot be solved, simulation results on the device or system design can provide certain reference data. This paper from the perspective of radiation effects, the total dose effect of the device work, SEU effect and transient radiation effects were studied. The research results have been achieved the following three aspects: 1, introduces the structure of SOI FinFET device, and through the Silvaco TCAD modeling and Simulation of the influence of the threshold voltage. The device with the radiation dose of the contrast degree, drift wide Fin devices and Fin devices in a narrow threshold voltage under the same radiation dose, the simulation results show that: (1) to 200krad (Si) when the incident radiation dose, drift SOI threshold voltage of the FinFET device has become very clear and when, with more than 400krad (Si) of the incident radiation dose, the threshold voltage shift of SOI FinFET devices are gradually flatten; (2) when the radiation dose is 200 krad (Si), the threshold voltage of Fin devices have wide The large drift, almost 4 times the.2 narrow Fin devices, studies the mechanism of SEU, charge collection mode, and continue to Silvaco TCAD simulation of single eventupset effects on SOI FinFET devices based on the relationship between the drain current changes with time, and double exponential curve model based on Messenger's classic prototype, fitted by least square method, the current pulse expression of single eventupset effects are obtained, and bring it into 6T SRAM SOI Fin FET storage unit based on the painting by Cadence software, and in circuit simulation, has been to the memory cell flip in the range of 40MeV LET cm2/mg to 50MeV - cm2/mg between.3, the instantaneous radiation effect and single event effect were distinguished, and briefly introduces the kernel structure of Monte Carlo Geant4 toolkit and main function modules, and the instantaneous radiant Shot effect, physical model corresponding to FinFET structure and energy of particles, the Geant4 program was written; on the instantaneous radiation effect of current pulse model, and bring it into the picture with Cadence software based on SOI FinFET 6T SRAM, to simulate the transient radiation effect, the peak current of the threshold the storage unit flip is 0.991mA, and then through the pulse current using the assumed model, obtained the SOI FinFET structure by proton (30MeV), negative (50keV), X ray electronic (10keV) device respectively from the forward and back to the incident "the number of particles, so that the threshold for proton anti SOI structure and FinFET the instantaneous X ray radiation, should be positive reinforcement in the back reinforcement, and for the anti negative electron instantaneous radiation, the back reinforcement should be stronger than the positive reinforcement of the conclusion; then compared the SOI FinFET structure and bulk silicon FinFET junction Transient radiation ability structure, the transient radiation ability of SOI FinFET structure is much better than that of bulk silicon FinFET structure conclusions. Finally, by considering the real situation of the incident particle and the amplification effect of bipolar devices itself, the assumption of instantaneous radiation generated by the pulse current effect model were explained.

【學位授予單位】：西安電子科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TP333

【共引文獻】

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