本文關鍵詞： 功率放大器 GaN E類 Ku波段 開關型 內匹配　出處：《電子科技大學》2015年碩士論文　論文類型：學位論文

【摘要】：信息產業(yè)的快速發(fā)展對功率放大器的尺寸頻率帶寬都提出了更高的要求,GaN材料具有禁帶寬度大、熱導率高、臨界擊穿電場高和飽和電子速度高等優(yōu)勢,使得GaN HEMT具有輸出功率密度大、擊穿電壓高、輸入/輸出阻抗高等特點,在高頻、高溫、高效率、寬帶大功率器件應用方面具有廣闊的前景。E類功率放大器是開關類放大器的一種,理想效率可達100%。在射頻頻率低端,E類功放有著比其他類型功放更高的效率和更好的線性度。但是,由于E類功放對晶體管本身的寄生參數(shù)的特殊要求,通常情況下,E類功放都無法在較高頻率下工作。隨著半導體技術的發(fā)展,E類功率放大器在越來越高的頻率得到了實現(xiàn)。由于通信、航空航天等方面對功耗的要求越來越高,E類功率放大器在更高頻率下的實現(xiàn)成為了研究的熱點。本文對GaN E類功率放大器的高效率寬頻帶特性以及內匹配的實現(xiàn)方法進行了研究。前期工作中針對GaN HEMT器件寄生電容較大的特點,采用饋電網絡的補償微帶線減小寄生參數(shù)的影響,實現(xiàn)了400μm柵寬GaN E類功率放大器設計,實測結果在13.7~14.2 GHz輸出功率大于30dBm,小信號增益大于7dB,漏極效率大于40%。在此基礎上,為實現(xiàn)大功率輸出及器件的小型化,采用2.4mm柵寬GaN HEMT設計了4路功率合成的內匹配功率放大器。仿真結果表明,該功率放大器在輸入功率39dBm的情況下,在13.7~14.2 GHz頻率范圍內功率附加效率大于43%,輸出功率大于45dBm。峰值PAE達44%,最大輸出功率大于40W,功率密度大于4W/mm。該放大器在內匹配工藝上實現(xiàn),利用鍵合金絲的電感效應及高介電常數(shù)基板的電容效應作電路匹配,使得功放整體的尺寸達到了17.2mm×22mm,滿足了小型化的要求。
[Abstract]:With the rapid development of information industry, the size and frequency bandwidth of power amplifiers are required to be higher. Gan materials have the advantages of large bandgap, high thermal conductivity, high critical breakdown electric field and high saturated electron velocity. GaN HEMT has the characteristics of high output power density, high breakdown voltage, high input / output impedance, and high efficiency in high frequency, high temperature and high efficiency. The application of wideband high-power devices has a broad prospect. Class E power amplifier is a kind of switching amplifier. At the low end of the RF frequency, the class E amplifier has higher efficiency and better linearity than any other type of amplifier. However, because of the special requirements of the class E amplifier for the parasitic parameters of the transistor itself, Generally speaking, class E power amplifiers cannot work at higher frequencies. With the development of semiconductor technology, class E power amplifiers are realized at higher and higher frequencies. The realization of class E power amplifier in higher frequency has become a hot topic in the field of aerospace and other aspects. In this paper, the high efficiency and broadband characteristics of GaN class E power amplifier and the realization of internal matching are discussed. Methods: in the previous work, the parasitic capacitance of GaN HEMT devices is large. The compensation microstrip line of feed network is used to reduce the influence of parasitic parameters, and a 400 渭 m gate width GaN E power amplifier is designed. The measured results show that the output power is more than 30 dBm, the small signal gain is more than 7 dB, and the drain efficiency is more than 40 dB at 13.7N 14.2 GHz. In order to realize the high power output and the miniaturization of the device, an internal matched power amplifier with 2.4 mm gate width GaN HEMT is designed. The simulation results show that the power amplifier is in the condition of the input power of 39dBm. In the frequency range of 13.7V 14.2 GHz, the additional power efficiency is greater than 43dBm, the output power is more than 45dBm. the peak PAE is 44W, the maximum output power is more than 40W, and the power density is more than 4W / mmm. the amplifier is realized in the matching process. By using the inductance effect of bond alloy wire and the capacitance effect of high dielectric constant substrate as circuit matching, the overall size of power amplifier is up to 17.2 mm 脳 22mm, which meets the requirement of miniaturization.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN722.75

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1 羅俞杰;Ku波段GaN E類功率放大器設計技術研究[D];電子科技大學;2015年

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本文編號：1518724