本文關(guān)鍵詞： 共振隧穿二極管 磷化銦 氮化鎵 金屬有機(jī)化學(xué)氣相淀積　出處：《天津工業(yè)大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：共振隧穿二極管(Resonant Tunneling Diode,RTD)作為一種新型高速兩端負(fù)阻納米器件,基于量子隧穿機(jī)制,具有量子效應(yīng),使RTD有著其它電子器件無法比擬的優(yōu)點(diǎn),即具有高頻高速、低壓低功耗、負(fù)阻、雙穩(wěn)態(tài)及自鎖的特性。RTD不僅可以應(yīng)用在模擬電路領(lǐng)域,如可以作為高頻振蕩器產(chǎn)生太赫茲輻射波源,還可以應(yīng)用到數(shù)字電路領(lǐng)域,能夠?qū)崿F(xiàn)復(fù)雜的邏輯單元。所以,獲得良好的RTD器件性能,具有里程碑意義。本論文主要結(jié)合太赫茲波段無限應(yīng)用前景以及RTD可作為太赫茲輻射波源的重要發(fā)展趨勢,并針對RTD發(fā)展中的關(guān)鍵問題,開展了對RTD的結(jié)構(gòu)設(shè)計(jì)與優(yōu)化和外延材料生長等方面的研究,其主要工作如下:1、共振隧穿二極管的結(jié)構(gòu)設(shè)計(jì)與優(yōu)化:在共振隧穿理論研究的基礎(chǔ)上,設(shè)計(jì)和優(yōu)化了以InP為襯底的RTD的外延材料結(jié)構(gòu),通過控制In組份獲得較高振蕩頻率和輸出功率,提高RTD的電流峰谷比,達(dá)到較高的10.33:1的結(jié)果。2、共振隧穿二極管外延材料結(jié)構(gòu)生長和測試分析:使用金屬有機(jī)化學(xué)氣相淀積(Metal Organic Chemical Vapor Deposition,MOCVD)技術(shù)對以 InP 為襯底的RTD外延材料結(jié)構(gòu)進(jìn)行生長,然后利用掃描電子顯微鏡(Scan Electron Microscope,SEM)、和 X 射線衍射(X-ray Diffraction,XRD)對外延材料進(jìn)行表征測試,獲得較好的RTD結(jié)構(gòu)外延片。3、開發(fā)利用高性能的新材料體系,進(jìn)行GaN基RTD結(jié)構(gòu)設(shè)計(jì)、模擬和仿真,獲得較好負(fù)微分電阻效應(yīng),峰谷電流比可達(dá)到4.6:1,并且得到了較小的峰值電壓,為VP=0.2V。本論文深入研究太赫茲波段RTD器件的外延材料體系及結(jié)構(gòu)參數(shù)、制備過程以及新型半導(dǎo)體材料的RTD優(yōu)化設(shè)計(jì),不斷提高RTD器件的性能。為以后對RTD的進(jìn)一步相關(guān)研究奠定了堅(jiān)實(shí)的基礎(chǔ)。
[Abstract]:Resonance tunneling diode (Resonant Tunneling Diodet) is a novel high speed negative resistive nanodevice with quantum effect based on quantum tunneling mechanism. RTD has many advantages, such as high frequency, high speed, low power consumption, negative resistance, bistability and self-locking, which can not only be used in analog circuits. If it can be used as a terahertz wave source for high-frequency oscillator, it can also be applied to the digital circuit field, and can realize complex logic unit. Therefore, good performance of RTD devices can be obtained. This paper mainly combines the infinite application prospect of terahertz band and the important development trend of RTD as terahertz radiation source, and aims at the key problems in the development of RTD. The structural design and optimization of RTD and the growth of epitaxial materials are studied. The main work is as follows: 1. The structure design and optimization of resonant tunneling diode: based on the theory of resonant tunneling. The epitaxial structure of RTD on InP substrate is designed and optimized. By controlling the in component, the high oscillation frequency and output power are obtained, and the current peak to valley ratio of RTD is improved. Reached the higher 10.33: 1 result of .2. Structural growth and testing Analysis of resonant tunneling Diode Epitaxial Materials: using Metalloorganic Chemical Vapor deposition (. Metal Organic Chemical Vapor Deposition. The structure of RTD epitaxial material on InP substrate was grown by MOCVD technique, and then scanning electron microscope (SEM) was used to fabricate the structure of RTD epitaxial material. The epitaxial materials were characterized by SEMX and X-ray diffraction X-ray diffraction (XRD), and a good RTD structure epitaxial wafer was obtained. A new material system with high performance is developed to design, simulate and simulate the GaN based RTD structure. A good negative differential resistance effect is obtained. The peak to valley current ratio can reach 4.6: 1. A smaller peak voltage of 0.2 V is obtained. The epitaxial material system and structure parameters of terahertz band RTD devices are studied in this paper. The preparation process and the RTD optimization design of new semiconductor materials continuously improve the performance of RTD devices and lay a solid foundation for further related research on RTD in the future.
【學(xué)位授予單位】：天津工業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN31

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