本文關(guān)鍵詞： LIGBT 隔離 襯底漏電流 溫度 擊穿電壓　出處：《南京郵電大學(xué)》2016年碩士論文　論文類型：學(xué)位論文

【摘要】：LIGBT作為一類重要的柵控雙極功率器件,既具有MOSFET的控制功率小、輸入阻抗高、驅(qū)動(dòng)電路簡單、開關(guān)速度高的優(yōu)點(diǎn),又有雙極型功率晶體管的飽和壓降低、電流密度大、電流處理能力強(qiáng)的優(yōu)點(diǎn),因此LIGBT器件被廣泛地應(yīng)用在各種功率集成電路以及電力電子系統(tǒng)中。但在工作中,由于電導(dǎo)調(diào)制作用,陽極會(huì)向漂移區(qū)注入大量空穴,其中部分空穴會(huì)在正漏極電壓作用下直接注入到襯底,從而產(chǎn)生嚴(yán)重的襯底漏電流,影響電路性能。為降低LIGBT的襯底漏電流,本文提出如下兩類新結(jié)構(gòu):(1)針對自熱效應(yīng)嚴(yán)重,擊穿電壓低的的問題,提出了分層SO ILIGBT結(jié)構(gòu):新結(jié)構(gòu)引入了埋氧層陽極和中間窗口,通過利用襯底參與承擔(dān)電壓體和利用硅窗口傳導(dǎo)熱量,提高了整個(gè)器件的耐受電壓并且降低了自熱效應(yīng)。仿真結(jié)果表明:新結(jié)構(gòu)的擊穿電壓提高1.5倍以上,工作時(shí)的熱點(diǎn)溫度下降15K以上,同時(shí)襯底漏電流低至7×10-12A/μm,開關(guān)速度基本不變。(2)針對第一種結(jié)構(gòu)工藝復(fù)雜,電流導(dǎo)通能力不夠強(qiáng)的問題,提出了雙通道SO ILIGBT,新結(jié)構(gòu)引入了雙柵結(jié)構(gòu),并且進(jìn)一步縮短埋氧層的長度,通過增加導(dǎo)電通道的方法,提高了電流導(dǎo)通能力,仿真結(jié)果表明,新結(jié)構(gòu)的擊穿電壓達(dá)到400V左右,飽和電流濃度最高達(dá)到3.7A/μm,同時(shí)襯底漏電流在7×10-12A/μm以下,開關(guān)速度基本不變。
[Abstract]:As a kind of important gate controlled bipolar power device, LIGBT has the advantages of low control power, high input impedance, simple drive circuit and high switching speed of MOSFET. The bipolar power transistor has the advantages of low saturation voltage, high current density and strong current processing ability. Therefore, LIGBT devices are widely used in various power integrated circuits and power electronic systems, but in operation, the anode will inject a large number of holes into the drift region due to the effect of conductance modulation. Some of the holes will be injected directly into the substrate under the positive drain voltage, resulting in serious substrate leakage current, which will affect the circuit performance. In order to reduce the substrate leakage current of LIGBT. In this paper, two kinds of new structure: 1) aiming at the serious self-heating effect and low breakdown voltage, a layered so ILIGBT structure is proposed: the buried oxygen layer anode and the middle window are introduced into the new structure. By using substrate to take part in the voltage body and using silicon window to conduct heat, the withstand voltage of the whole device is improved and the self-heating effect is reduced. The simulation results show that the breakdown voltage of the new structure is increased by more than 1.5 times. At the same time, the substrate leakage current is as low as 7 脳 10 ~ (-12) A / 渭 m, and the switching speed is almost unchanged. Because the current conduction ability is not strong enough, the double channel so ILIGBT is put forward. The new structure introduces the double gate structure, and further shortens the length of the buried oxygen layer by increasing the conductive channel. The simulation results show that the breakdown voltage of the new structure is about 400V, and the saturation current concentration is up to 3.7A / 渭 m. At the same time, the substrate leakage current is below 7 脳 10-12 A / 渭 m, and the switching speed is almost unchanged.
【學(xué)位授予單位】：南京郵電大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2016
【分類號】：TN322.8

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1 郭厚東;低LIGBT襯底漏電流新結(jié)構(gòu)研究[D];南京郵電大學(xué);2016年

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本文編號：1460904