本文關(guān)鍵詞： 黑磷 場(chǎng)效應(yīng)晶體管 拉曼特性 輸出特性 轉(zhuǎn)移特性　出處：《江蘇大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：黑磷作為二維材料家族中一名新的成員,在電子器件領(lǐng)域具有石墨烯和過渡金屬硫化物(TMDCs)所不具備的特性,如:可協(xié)調(diào)的帶隙(0.3-2.0 eV)、高的載流子遷移率(1000 cm2V-1s-1)以及可觀的開關(guān)比(105)。基于這些特性,利用黑磷制備的場(chǎng)效應(yīng)晶體管器件具有優(yōu)越的電學(xué)性能。然而,由于這種材料問世不久,在黑磷場(chǎng)效應(yīng)晶體管的實(shí)際應(yīng)用中仍然有一些未知領(lǐng)域需要進(jìn)一步探索,如黑磷場(chǎng)效應(yīng)晶體管的調(diào)控問題、作為晶體管器件在電路中的可靠性問題等。本論文將詳細(xì)介紹黑磷場(chǎng)效應(yīng)晶體管的聲子散射和電學(xué)特性,討論內(nèi)應(yīng)力對(duì)黑磷場(chǎng)效應(yīng)晶體管性能的影響,探究黑磷場(chǎng)效應(yīng)晶體管的擊穿行為以及在大氣環(huán)境下的穩(wěn)定性。黑磷薄膜的樣品制備采用的是機(jī)械剝離法,襯底的制備基于反應(yīng)離子刻蝕(RIE)技術(shù),在襯底上預(yù)先制備好TiW/Au電極,最后將黑磷薄膜轉(zhuǎn)移到襯底上完成晶體管的制備。此方法避免了在黑磷薄膜上沉積電極過程中引入的污染,可以確保黑磷的最佳性能。利用拉曼光譜儀和半自動(dòng)探針臺(tái)對(duì)基于上述方法制備的300 nm柵介質(zhì)的黑磷場(chǎng)效應(yīng)晶體管進(jìn)行了測(cè)試,黑磷的Ag1、B2g和Ag2三個(gè)拉曼特征峰明顯,沒有其他明顯的缺陷峰,表明黑磷結(jié)構(gòu)完整,具有最原始的特性。電學(xué)測(cè)試結(jié)果顯示晶體管的輸出曲線呈現(xiàn)線性關(guān)系,柵壓可以有效地協(xié)調(diào)輸出特性;晶體管的轉(zhuǎn)移特性表明,黑磷場(chǎng)效應(yīng)晶體管中為空穴作為主要載流子的雙極性特性,主要表現(xiàn)為p型特性。RIE技術(shù)在SiO2/Si襯底上加工出的方孔可以對(duì)黑磷薄膜進(jìn)行懸置,此方法有效地向晶體管中引入張應(yīng)力,拉曼光譜儀顯示方孔內(nèi)部的黑磷薄膜與孔外部分相比Ag1、B2g和Ag2峰都發(fā)生了不同程度的紅移,Ag1峰對(duì)張應(yīng)力最為敏感。隨后測(cè)試了該器件的電學(xué)特性,內(nèi)應(yīng)力對(duì)輸出特性影響不大;由晶體管的轉(zhuǎn)移特性計(jì)算的到載流子遷移率達(dá)到347.5 cm2V-1s-1,張應(yīng)力可以在一定程度上提高晶體管的載流子遷移率。懸置的方法可以有效地協(xié)調(diào)黑磷場(chǎng)效應(yīng)晶體管的性能,但薄的柵介質(zhì)容易使晶體管發(fā)生擊穿。當(dāng)晶體管被擊穿后,電學(xué)特性發(fā)生了質(zhì)變,器件不具有晶體管的特性,行成了類肖特基二極管。器件的輸出特性在不同柵壓下呈相互平行的直線,出現(xiàn)了漏電現(xiàn)象,轉(zhuǎn)移特性顯示器件為單向?qū)顟B(tài)。分別對(duì)同一個(gè)黑磷場(chǎng)效應(yīng)晶體管在制備時(shí)和在空氣中暴露一個(gè)月后的性能進(jìn)行了測(cè)試,利用光鏡可以觀察到在黑磷表面形成“水滴”狀物質(zhì),黑磷厚度變薄。在空氣中暴露后黑磷的三個(gè)拉曼特征峰都發(fā)生了藍(lán)移。晶體管的電阻變大,開關(guān)比和載流子遷移率均變小。
[Abstract]:As a new member of the two-dimensional material family, black phosphorus has some properties which graphene and transition metal sulfide (TMDCs) do not have in the field of electronic devices. For example: detachable bandgap of 0.3-2.0 EV, high carrier mobility of 1000 cm2V-1s-1) and considerable switching ratio of 105g. Based on these characteristics. Field-effect transistors fabricated with black phosphorous have excellent electrical properties. However, due to the recent advent of this material. In the practical application of black phosphorus field effect transistor, there are still some unknown fields that need to be further explored, such as the regulation of black phosphorus field effect transistor. In this paper, the phonon scattering and electrical properties of black phosphorus field effect transistor are introduced in detail, and the influence of internal stress on the performance of black phosphorus field effect transistor is discussed. To investigate the breakdown behavior of black phosphorus FET and its stability in atmospheric environment, the sample of black phosphorus thin film was prepared by mechanical stripping, and the substrate was prepared by reactive ion etching (rie) technique. The TiW/Au electrode is prepared on the substrate and the black phosphorus film is transferred to the substrate to prepare the transistor. This method avoids the pollution caused by the deposition of the electrode on the black phosphorus film. The optimal performance of black phosphorus can be ensured. The black phosphorus field effect transistors with 300nm gate dielectric prepared by the above method have been tested by Raman spectrometer and semi-automatic probe station. The black phosphorus Ag1 has been tested. The Raman characteristic peaks of B2g and Ag2 are obvious, but there are no other obvious defects, which indicates that the black phosphorus has the most original characteristic and the structure of black phosphorus is intact. The electrical test results show that the output curves of the transistors show a linear relationship. The gate voltage can effectively coordinate the output characteristics; The transfer characteristics of the transistors show that the holes are the main carriers in the black phosphorus field effect transistors. The main performance of this method is that the square hole fabricated by rie on SiO2/Si substrate can mount the black phosphorus film. This method can effectively introduce tensile stress into the transistor. Raman spectrometer showed that the black phosphorus films in the square pore had different red shifts compared with the outside part of the black phosphorus films in the Ag _ (1) O _ (2) g and Ag2 peaks. The Ag1 peak is the most sensitive to the tensile stress. Then the electrical properties of the device are tested and the internal stress has little effect on the output characteristics. The carrier mobility calculated from the transistors' transfer characteristics is 347.5 cm2V-1s-1. The tensile stress can improve the carrier mobility of the transistor to a certain extent, and the mounting method can effectively coordinate the performance of the black phosphorus field effect transistor. However, the thin gate dielectric makes the transistor breakdown easily. When the transistor is broken down, the electrical characteristics of the device changes qualitatively, and the device does not have the characteristics of the transistor. The output characteristics of the device are parallel to each other under different gate voltages, resulting in leakage. The transfer characteristics show that the device is in a single-pass state. The performance of the same black phosphorus field effect transistor was tested during preparation and after exposure to air for one month. Using the light microscope, we can observe the formation of "water droplets" on the surface of black phosphorus, the thickness of black phosphorus becomes thinner. After exposure to air, the three Raman characteristic peaks of black phosphorus are blue shifted and the resistances of transistors become larger. The switching ratio and carrier mobility become smaller.
【學(xué)位授予單位】：江蘇大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN386
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本文編號(hào)：1460764