本文關(guān)鍵詞： 光泵浦垂直外腔面發(fā)射激光器 熱管理模擬 基質(zhì)酸性腐蝕　出處：《重慶師范大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：光泵浦垂直外腔面發(fā)射激光器(optically pumped vertical external cavity surface emitting laser,OP-VECSEL)可以輸出TEM00模的光,它綜合了面發(fā)射半導(dǎo)體激光器和光泵浦固體激光器的優(yōu)點(diǎn),高功率,高光束質(zhì)量,能方便地進(jìn)行鎖模和腔內(nèi)倍頻,被廣泛地用于激光顯示領(lǐng)域,醫(yī)學(xué)刑偵技術(shù)和生物儀器領(lǐng)域的一種新型的激光光源。本文首先介紹了半導(dǎo)體激光器的發(fā)展過(guò)程,與氣體激光器和固體激光器均做了一定的比較,突出了半導(dǎo)體激光器可以直接由電流泵浦或光泵浦。介紹了由半導(dǎo)體激光器和光泵浦固體激光器發(fā)展而來(lái)的光泵浦垂直外腔面發(fā)射激光器。介紹了光泵浦垂直外腔面發(fā)射激光器的優(yōu)勢(shì):光泵浦垂直外腔面發(fā)射激光器無(wú)pn結(jié)、無(wú)電接觸,簡(jiǎn)化了激光器芯片的生長(zhǎng)過(guò)程,也不需要諸如光刻和臺(tái)面蝕刻額外的處理,可以靈活的調(diào)節(jié)腔長(zhǎng),光泵浦垂直外腔面發(fā)射激光器的輸出光可以覆蓋紅外到可見(jiàn)光波段。帶隙工程允許優(yōu)化垂直外腔面發(fā)射激光器泵浦的功率分布,以消除對(duì)多量子載流子傳輸?shù)南拗坪蛢?yōu)化的屏障,可最大限度提高泵浦吸收效率和限制量子阱的載流子,從而最大限度地減少了由于光泵浦產(chǎn)生的不必要的熱量。介紹了垂直外腔面發(fā)射激光器在多個(gè)領(lǐng)域的廣泛應(yīng)用。但同時(shí)也說(shuō)明了了垂直外腔面發(fā)射激光器外延片在生長(zhǎng)過(guò)程中由于設(shè)備等原因?qū)е碌牟痪鶆蛐?會(huì)改變半導(dǎo)體微腔的長(zhǎng)度,當(dāng)有源區(qū)中的溫度上升時(shí),輸出的激光波長(zhǎng)會(huì)紅移。多數(shù)應(yīng)用要求具有波長(zhǎng)穩(wěn)定性和線寬要求,這些缺點(diǎn)可能會(huì)限制了光泵浦垂直外腔面發(fā)射激光器在這些方面的應(yīng)用。介紹了光泵浦垂直外腔面發(fā)射激光器外延片的基本理論和結(jié)構(gòu),給出了外延片結(jié)構(gòu)中運(yùn)行原理能帶帶隙示意圖,形象地說(shuō)明了激光的形成機(jī)制。闡述了外延片中分布布拉格反射鏡的設(shè)計(jì)原理和公式推導(dǎo),討論了反射率和周期膜層數(shù)奇偶數(shù)的關(guān)系,得出奇數(shù)層膜數(shù)的反射率要比偶數(shù)層膜數(shù)要大。介紹了多量子阱有源區(qū)中因晶格不匹配的應(yīng)力而導(dǎo)致缺陷和錯(cuò)位的量子阱應(yīng)變理論,并對(duì)臨界厚度做了計(jì)算和量子阱的自發(fā)輻射譜做了分析。給出了光在周期性增益結(jié)構(gòu)的光場(chǎng)分布。根據(jù)實(shí)驗(yàn)數(shù)據(jù)畫(huà)出了閾值載流子功率,閾值泵浦功率和量子阱個(gè)數(shù)的關(guān)系。對(duì)分布布拉格反射鏡上光斑的尺寸,外腔鏡上的光斑和腔長(zhǎng)的關(guān)系給出了關(guān)系曲線圖。介紹了光泵浦垂直外腔面發(fā)射激光器熱管理的基本思想和建立了光泵浦垂直外腔面發(fā)射激光器中底部散熱器和窗口散熱片的熱量模型并進(jìn)行了分析,通過(guò)了MATLAB軟件模擬對(duì)是否有襯底基質(zhì),是否有散熱片,在不同的泵浦光斑直徑,不同功率下分別進(jìn)行了模擬,并給出了相應(yīng)的結(jié)論。介紹了光泵浦垂直外腔面發(fā)射激光器熱管理的常用方法,包括散熱窗口片的使用,外延片基質(zhì)的去除。給出了外延片的結(jié)構(gòu)和成份表,這樣更能有針對(duì)性的去除基質(zhì),其中外延片基質(zhì)的去除包括機(jī)械減薄法來(lái)去除大部分基質(zhì)然后再用化學(xué)腐蝕法去除剩下的基質(zhì),或者直接使用化學(xué)腐蝕法去除。使用的化學(xué)濕法腐蝕單獨(dú)做了比較性的實(shí)驗(yàn),通過(guò)不同配比的硫酸和雙氧水腐蝕液,在不同的溫度對(duì)外延片基質(zhì)的腐蝕速率和腐蝕后的表面平整度給了比較和分析,并使用原子力顯微鏡來(lái)表征腐蝕后表面的平整度,結(jié)合實(shí)際情況來(lái)判斷較好的腐蝕條件。
[Abstract]:Optically pumped vertical external cavity surface emitting laser (optically pumped vertical external cavity surface emitting laser, OP-VECSEL) TEM00 model can output light, it combines the advantages, surface emitting semiconductor lasers and optical pumped solid laser of high power, high beam quality, convenient for locking and intracavity frequency doubling, is widely used in laser the display area, a new type of laser light field medical criminal investigation technology and biological instrument. This paper first introduces the development process of the semiconductor laser, and gas and solid-state lasers have done some comparison, the semiconductor laser can be directly pumped by the current outstanding or optical pumping is introduced. Optically pumped vertical external cavity surface of a semiconductor laser and light pumped solid laser and the emitting laser. The optically pumped vertical external cavity surface emitting laser light advantage. Pumped vertical external cavity surface emitting laser without PN node, no electric contact, simplifies the growth process of the laser chip, and does not require additional processing such as photolithography and mesa etching, the flexibility to adjust the cavity length, the output light pumped vertical external cavity surface emitting laser light can cover the infrared to visible light band. Power distribution allow gap engineering optimization of vertical cavity surface emitting laser pumped, to eliminate the multiple quantum carrier transmission constraints and optimization of the barrier, to maximize the carrier pump absorption efficiency and limit the quantum well, thereby minimizing the unnecessary heat generated by optical pumping. The application of vertical external cavity surface emitting lasers in many fields. But at the same time also shows that the inhomogeneity of the vertical cavity surface emitting laser wafer due to equipment and other reasons in the process of growth, will The change of semiconductor micro cavity length, when the active region temperature rises, the output of the laser wavelength shifts to red. Most application requirements have wavelength stability and linewidth, these disadvantages may limit the optically pumped vertical external cavity surface emitting laser application in these fields. This paper introduces the optically pumped vertical external cavity surface emitting basic the theory and structure of the laser epitaxial wafer, wafer structure is given in the operating principle of the energy band diagram, vividly illustrates the formation mechanism of the laser. It also expounds the design principle and formula derivation of distributed Prague reflector in the epitaxial wafer, discussed the relationship between the reflectivity and the number of cycles of odd and even the odd film reflectivity the number of results than even number to film. This paper introduces a multi quantum well active region due to stress caused by the lattice mismatch strain quantum well theory defects and dislocation, and the critical thickness 鍋氫簡(jiǎn)璁＄畻鍜岄噺瀛愰槺鐨勮嚜鍙戣緪灝勮氨鍋氫簡(jiǎn)鍒嗘瀽.緇欏嚭浜?jiǎn)鍏夊湪鍛ㄦ湡妫?

本文編號(hào)：1453897