本文關(guān)鍵詞： 微電子封裝 電遷移 無鉛焊點(diǎn) 有限元　出處：《浙江工業(yè)大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著微電子封裝焊點(diǎn)不斷向微型化、高封裝密度化方向發(fā)展,電遷移逐漸成為微互連焊點(diǎn)的重要失效機(jī)制,因此國際半導(dǎo)體技術(shù)路線圖組織(ITRS)將電遷移列為限制高密度封裝發(fā)展的關(guān)鍵技術(shù)瓶頸。本文針對(duì)無鉛焊點(diǎn)在電熱耦合作用下的微觀化合物結(jié)構(gòu)演化以及裂紋拓展問題進(jìn)行了研究,主要工作和結(jié)果如下:(1)搭建無鉛互連焊點(diǎn)電遷移試驗(yàn)平臺(tái),自行設(shè)計(jì)實(shí)驗(yàn)測(cè)試裝置,進(jìn)行電遷移試驗(yàn)測(cè)試。電遷移試驗(yàn)進(jìn)行了三個(gè)方面的測(cè)試工作:針對(duì)芯片進(jìn)行了不同溫度環(huán)境和電流密度對(duì)芯片表面溫度影響的測(cè)試;針對(duì)無鉛焊點(diǎn)的化合物生長情況,在150℃的環(huán)境溫度和電流密度為1.8×104A/cm2的條件下,測(cè)試無鉛焊點(diǎn)的化合物生長及失效歷程,測(cè)試后將試樣在SEM電子顯微鏡下觀察其化合物結(jié)構(gòu)演化;最后,在150℃的環(huán)境溫度和電流密度為1.5×104A/cm2的條件下,測(cè)試無鉛焊點(diǎn)的裂紋形成及拓展,測(cè)試后將試樣在SEM電子顯微鏡下觀察其裂紋結(jié)構(gòu)的形成及拓展情況。(2)針對(duì)電遷移實(shí)驗(yàn)進(jìn)行總結(jié)和分析�；谛酒瑴囟葘�(shí)際測(cè)量結(jié)果,總結(jié)芯片的溫度變化規(guī)律確定芯片在有限元分析時(shí)芯片表面的熱對(duì)流系數(shù)。針對(duì)試驗(yàn)中電遷移誘致的互連焊點(diǎn)化合物生長進(jìn)行分析,研究通電兩焊點(diǎn)的化合物的生長角度變化速率、化合物生長角速率與截止電壓的關(guān)系,其中:左側(cè)焊點(diǎn)生長速率6.2%/10mv,右側(cè)焊點(diǎn)生長速率為12.6%/10mv。左側(cè)焊點(diǎn)角度變化速率為6.5度/10mv,右側(cè)焊點(diǎn)角度變化速率為12.75度/10mv;針對(duì)試驗(yàn)中的空洞裂紋進(jìn)行總結(jié)分析,裂紋形成有兩種情形,一種是空洞間不斷融合形成的光滑圓潤的裂紋,一種是由于內(nèi)部應(yīng)力引起的脆性拓展裂紋。(3)對(duì)測(cè)試裝置進(jìn)行ANSYS有限元建模,結(jié)合試驗(yàn)測(cè)試結(jié)果對(duì)測(cè)試裝置進(jìn)行熱電耦合分析,芯片的溫度分布與試驗(yàn)的實(shí)測(cè)結(jié)果比較吻合�；谠用芏确e分法(ADI)對(duì)關(guān)鍵焊點(diǎn)的失效位置進(jìn)行預(yù)測(cè)并與焊點(diǎn)失效位置的SEM結(jié)果進(jìn)行對(duì)比,結(jié)果表明:ADI法能較準(zhǔn)確地預(yù)測(cè)焊點(diǎn)電遷移失效的位置。
[Abstract]:With the development of microelectronic packaging solder joint to miniaturization and high packaging density, electromigration has gradually become an important failure mechanism of micro-interconnect solder joint. International Semiconductor Technology Roadmap (ITRSs). Electromigration is regarded as the key technology bottleneck to limit the development of high-density packaging. The microstructure evolution and crack expansion of lead-free solder joints under electrothermal coupling are studied in this paper. The main work and results are as follows: 1) setting up the electromigration test platform of lead-free interconnect solder joint, and designing the experimental test device by ourselves. The electromigration test was carried out in three aspects: the effect of different temperature environment and current density on the surface temperature of the chip was tested. The growth and failure history of lead-free solder joints were measured at 150 鈩，

本文編號(hào)：1451693