本文關(guān)鍵詞：一種高性能IGBT驅(qū)動(dòng)電路設(shè)計(jì)　出處：《電子科技大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： IGBT 柵驅(qū)動(dòng)電路 BCD工藝

【摘要】：作為電力電子領(lǐng)域新一代的主流產(chǎn)品,IGBT的應(yīng)用涉及到國(guó)民經(jīng)濟(jì)的各個(gè)部門,是節(jié)約能源,發(fā)展低碳經(jīng)濟(jì)的關(guān)鍵支撐技術(shù)之一,它具有輸入阻抗高、導(dǎo)通壓降低、峰值電流容量大等優(yōu)點(diǎn)。其驅(qū)動(dòng)與保護(hù)電路作為IGBT應(yīng)用中的關(guān)鍵技術(shù)之一,是保證IGBT高效、可靠運(yùn)行的必要條件,所以設(shè)計(jì)一款性能優(yōu)異的IGBT驅(qū)動(dòng)保護(hù)電路是十分必要的。本課題基于1μm 600 V BCD工藝平臺(tái),研究設(shè)計(jì)了一種用于600 V的IGBT驅(qū)動(dòng)保護(hù)電路,電路采用半橋結(jié)構(gòu),可廣泛應(yīng)用于PWM電機(jī)控制、DC-AC逆變等領(lǐng)域中。電路設(shè)計(jì)具體指標(biāo)包括:芯片高低端電源輸入為14 V到18 V,高端最高浮動(dòng)偏置電壓為600 V,能夠提供峰值為1 A和-2 A的柵極驅(qū)動(dòng)電流,同時(shí)芯片集成了欠壓鎖定,過(guò)溫保護(hù)等功能,能夠兼容3.3 V及5 V TTL邏輯控制信號(hào)。在電路設(shè)計(jì)過(guò)程中,首先通過(guò)對(duì)常見(jiàn)的IGBT驅(qū)動(dòng)電路的拓?fù)浣Y(jié)構(gòu)、驅(qū)動(dòng)原理與應(yīng)用的分析,確定了電路的總體結(jié)構(gòu)與設(shè)計(jì)性能指標(biāo);然后開(kāi)始對(duì)電路中的各子模塊電路進(jìn)行分析設(shè)計(jì),本文詳細(xì)地對(duì)以下模塊:輸入邏輯控制電路、窄脈寬拓展電路、5 V電源轉(zhuǎn)換電路、電流基準(zhǔn)電路及欠壓鎖定電路進(jìn)行了原理分析與設(shè)計(jì),利用仿真軟件Hspice對(duì)電路中各個(gè)子電路模塊進(jìn)行了仿真分析與驗(yàn)證,并根據(jù)仿真結(jié)果優(yōu)化電路性能。最后,作者簡(jiǎn)要介紹了驅(qū)動(dòng)電路中其余子模塊電路的功能與仿真結(jié)果,根據(jù)各子電路的功能,詳細(xì)地分析了本課題驅(qū)動(dòng)保護(hù)電路的工作原理,同時(shí)利用仿真軟件Hspice對(duì)設(shè)計(jì)的IGBT驅(qū)動(dòng)電路低端控制驅(qū)動(dòng)電路進(jìn)行了仿真分析,驗(yàn)證電路指標(biāo)。
[Abstract]:As the field of power electronics and a new generation of mainstream products, the application of IGBT involves all sectors of the national economy, is one of the key supporting technologies of energy conservation, the development of low carbon economy, it has a high input impedance, conduction voltage, peak current has the advantages of large capacity. The drive and protection circuit is one of the key technologies in IGBT in the application of IGBT is to ensure efficient and reliable operation of the necessary conditions, so the design of a high performance IGBT drive protection circuit is necessary. In this paper 1 m 600 V platform based on BCD technology, design a kind of driving circuit for 600 V IGBT circuit with half bridge structure, can be widely the application of PWM in motor control, DC-AC inverter field. Specific circuit design indicators include: high and low power chip input of 14 V to 18 V, the highest high-end floating bias voltage is 600 V, can provide a peak value of 1 A and -2 A The gate drive current at the same time, the chip integrates undervoltage lockout, over temperature protection and other functions, can be compatible with 3.3 V and 5 V TTL logic control signal. The circuit design process, first through the drive circuit structure of common IGBT, analysis of driving principle and application, to determine the overall structure and the design of circuit performance then start index; the analysis and design of each sub module circuit, this paper on the following modules: the logic control circuit input, narrow pulse width expansion circuit, 5 V power conversion circuit, current reference circuit and undervoltage lockout circuit is analyzed and the design principle of each sub module circuit in the circuit the analysis and verification of simulation using simulation software Hspice, and according to the simulation results of circuit optimization performance. Finally, the author briefly introduces the driving circuit of the fruit function and simulation node sub module circuit, according to the sub The function of the circuit is analyzed in detail. The working principle of the drive and protection circuit is analyzed in detail. At the same time, the low level control drive circuit of the IGBT drive circuit is simulated and analyzed by using the simulation software Hspice, and the circuit index is verified.

【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN322.8

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本文編號(hào)：1392439