【摘要】：以雙層Si Nx膜多晶硅太陽電池為研究對象,通過調(diào)整PECVD工藝參數(shù)制備不同折射率和厚度的雙層氮化硅減反射膜太陽電池,并用玻璃、EVA和背板等將電池片封裝成光伏組件,進(jìn)行85℃、85%RH條件下組件電勢誘導(dǎo)衰減(PID)實(shí)驗(yàn)。研究結(jié)果表明:(1)改變內(nèi)層折射率和厚度保持外層較低的折射率時(shí),雙層氮化硅膜太陽電池均會(huì)發(fā)生嚴(yán)重的PID效應(yīng);(2)但隨著外層折射率提高,電池PID效應(yīng)顯著減小,外層折射率≥2.15的電池PID實(shí)驗(yàn)600 h功率衰減小于5%;(3)雙層氮化硅膜抗PID太陽電池的轉(zhuǎn)化效率略低于普通太陽電池,但其組件的封裝損失較小,與普通電池的組件功率相當(dāng),因此具有很好的應(yīng)用前景。
[Abstract]:Taking the double-layer Si Nx film polysilicon solar cell as the research object, the double-layer silicon nitride antireflective film solar cell with different refractive index and thickness was prepared by adjusting the process parameters of PECVD. The cell was packaged into photovoltaic module with glass, EVA and backboard, and the potential induced attenuation (PID) experiment of the module was carried out at 85 鈩，

本文編號：2516583