絲網(wǎng)印刷在晶體硅太陽電池中的應(yīng)用研究
發(fā)布時(shí)間：2019-03-25 16:39
【摘要】：金屬化工藝是目前制造常規(guī)晶體硅太陽電池最關(guān)鍵的工藝之一,它決定了太陽電池最終的光電轉(zhuǎn)換效率。金屬化工藝主要涉及網(wǎng)版、厚膜漿料、印刷和燒結(jié)。目前高方阻密柵線設(shè)計(jì)是提高太陽電池光電轉(zhuǎn)換效率的重要方向之一,網(wǎng)版直接決定了柵線印刷的質(zhì)量,然而國內(nèi)外對絲網(wǎng)印刷網(wǎng)版的研究甚少,本論文主要研究網(wǎng)版參數(shù)及厚膜漿料印刷(二次印刷)在晶體硅太陽電池上的應(yīng)用。 隨著晶體硅太陽電池技術(shù)的發(fā)展,絲網(wǎng)印刷成為制備太陽電池必不可少的工藝,其主要工藝目的有： 1)在已形成的p-n結(jié)和鍍膜后的硅片上進(jìn)行電極的印刷； 2)順利導(dǎo)出由光照產(chǎn)生的載流子,實(shí)現(xiàn)太陽電池的光電轉(zhuǎn)化； 3)干燥、燒結(jié)硅片上的漿料,燃盡漿料中的有機(jī)成分,使?jié){料和硅片形成良好的歐姆接觸。 本文主要研究內(nèi)容如下： 1.由于計(jì)算網(wǎng)版下墨量的原理想模型,未將網(wǎng)版參數(shù)-感光膠膜厚度,考慮在內(nèi),導(dǎo)致計(jì)算值與實(shí)際實(shí)驗(yàn)結(jié)果偏差較大。本論文在原理想模型的基礎(chǔ)上,建立計(jì)算網(wǎng)版下墨量的新模型,并推導(dǎo)出計(jì)算網(wǎng)版下墨量的具體數(shù)學(xué)表達(dá)式,通過設(shè)計(jì)實(shí)驗(yàn)求出了數(shù)學(xué)表達(dá)式中的粘結(jié)系數(shù),同時(shí)也研究分析了漿料流變性對粘結(jié)系數(shù)的影響。 2.研究網(wǎng)版工藝對晶體硅太陽電池性能的影響,主要包括感光膠厚度、網(wǎng)版厚度,對多晶硅太陽電池性能的影響,實(shí)驗(yàn)結(jié)果發(fā)現(xiàn)感光膠膜厚并非越厚越好,而網(wǎng)版厚度的降低更有利于電池性能的提升；感光膠涂布均勻性試驗(yàn),實(shí)驗(yàn)得出感光膠涂布次數(shù)與網(wǎng)版厚度,以及涂布次數(shù)與網(wǎng)版表面粗糙度的關(guān)系；然后比較了不同的制版方式和不同的網(wǎng)布材料對電池性能的影響。 3.在形成電極Ag-Si接觸的基礎(chǔ)上,優(yōu)化了燒結(jié)工藝,并研究了峰值燒結(jié)溫度對電池填充因子FF的影響；優(yōu)化了刮條的硬度并設(shè)計(jì)了多角度刮刀；然后多角度研究了2代二次印刷,分別對比了柵線燒結(jié)后的高寬比、柵線的SEM圖、電池的I-V特性曲線圖、柵線電阻及接觸電阻值、電池的PL圖,得出第2代二次印刷,比單次印刷電池的接觸電阻降低了4mΩ/cm2,柵線電阻降低了0.11Ω/cm,最終電池的轉(zhuǎn)換效率有0.3%的提升。 4.在接觸電阻形成的原理方面,二次印刷與電鍍電極很相似,本論文在相同的柵線遮光面積、不同的柵線間距兩種情況下,研究了電鍍電極和絲網(wǎng)印刷電極,實(shí)驗(yàn)結(jié)果發(fā)現(xiàn),太陽電池經(jīng)過電鍍電極在串聯(lián)電阻方面具有優(yōu)勢,這與二次印刷非常相似,同時(shí)也進(jìn)一步驗(yàn)證了二次印刷的可靠性。
[Abstract]:The metallization process is one of the most critical processes in the manufacture of conventional crystalline silicon solar cells, which determines the final photoelectric conversion efficiency of the solar cell. The metallization process mainly involves screen printing, thick film sizing, printing and sintering. At present, the design of the high-square grid line is one of the important directions to improve the photoelectric conversion efficiency of the solar cell, the quality of the grid line printing is directly determined by the screen, This paper mainly studies the application of screen parameters and thick film printing (secondary printing) on crystalline silicon solar cells. With the development of crystalline silicon solar cell technology, screen printing has become an essential technology for preparing solar cell, and its main process purpose 1) conducting the electrode on the formed p-n junction and the coated silicon wafer; printing;2) the smooth export of the light produced by the light the generation of a solar cell by the generation of a carrier (3) drying, sintering the slurry on the silicon wafer, and burning out the organic components in the slurry to form the slurry and the silicon wafer; Good ohmic contact. The main contents of the study are as follows:1. The calculation value is caused by the calculation of the principle of the ink amount under the screen plate, the thickness of the screen parameter and the photosensitive film is not taken into consideration, Based on the principle and model, the paper establishes a new model for calculating the amount of ink in the net plate, and derives the specific mathematical expression for calculating the amount of ink in the net plate, which is obtained by the design experiment. The adhesion coefficient in the mathematical expression is also studied and analyzed. 2. The effect of the screen process on the performance of the crystalline silicon solar cell is studied. The effect of the screen process on the performance of the crystalline silicon solar cell is mainly composed of the thickness of the photosensitive adhesive, the thickness of the screen and the effect on the performance of the polycrystalline silicon solar cell. The method is beneficial to the improvement of the performance of the battery, and the sensitization glue coating uniformity test is carried out to obtain the relation between the number of coating times of the photosensitive glue and the screen thickness, the number of coating times and the surface roughness of the screen, and then the different plate-making modes and the differences are compared. 3. On the basis of forming the contact of Ag-Si, the sintering process is optimized, and the influence of the peak sintering temperature on the filling factor FF of the battery is studied. The hardness of the scraping strip is optimized and the multi-angle scraper is designed. and then, two-generation secondary printing is carried out at a multi-angle, the aspect ratio of the grid line sintering, the SEM image of the grid line, the I-V characteristic graph of the battery, the grid line resistance and the contact resistance value, the PL diagram of the battery are compared, the second generation secondary printing is obtained, the contact resistance of the second generation secondary printing is reduced by 4 m惟/ cm2, The grid line resistance is reduced by 0.11惟/ cm, and finally The conversion efficiency of the battery is improved by 0.3%.4. In the principle of the contact resistance formation, the secondary printing is similar to that of the electroplating electrode. In this paper, the electric power is studied under the two conditions of the same grid line shading area and different grid line spacing. the experimental results show that the solar cell has advantages in the series resistance through the plating electrode, which is very similar to the secondary printing,
【學(xué)位授予單位】：江南大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TM914.41
本文編號：2447140
[Abstract]:The metallization process is one of the most critical processes in the manufacture of conventional crystalline silicon solar cells, which determines the final photoelectric conversion efficiency of the solar cell. The metallization process mainly involves screen printing, thick film sizing, printing and sintering. At present, the design of the high-square grid line is one of the important directions to improve the photoelectric conversion efficiency of the solar cell, the quality of the grid line printing is directly determined by the screen, This paper mainly studies the application of screen parameters and thick film printing (secondary printing) on crystalline silicon solar cells. With the development of crystalline silicon solar cell technology, screen printing has become an essential technology for preparing solar cell, and its main process purpose 1) conducting the electrode on the formed p-n junction and the coated silicon wafer; printing;2) the smooth export of the light produced by the light the generation of a solar cell by the generation of a carrier (3) drying, sintering the slurry on the silicon wafer, and burning out the organic components in the slurry to form the slurry and the silicon wafer; Good ohmic contact. The main contents of the study are as follows:1. The calculation value is caused by the calculation of the principle of the ink amount under the screen plate, the thickness of the screen parameter and the photosensitive film is not taken into consideration, Based on the principle and model, the paper establishes a new model for calculating the amount of ink in the net plate, and derives the specific mathematical expression for calculating the amount of ink in the net plate, which is obtained by the design experiment. The adhesion coefficient in the mathematical expression is also studied and analyzed. 2. The effect of the screen process on the performance of the crystalline silicon solar cell is studied. The effect of the screen process on the performance of the crystalline silicon solar cell is mainly composed of the thickness of the photosensitive adhesive, the thickness of the screen and the effect on the performance of the polycrystalline silicon solar cell. The method is beneficial to the improvement of the performance of the battery, and the sensitization glue coating uniformity test is carried out to obtain the relation between the number of coating times of the photosensitive glue and the screen thickness, the number of coating times and the surface roughness of the screen, and then the different plate-making modes and the differences are compared. 3. On the basis of forming the contact of Ag-Si, the sintering process is optimized, and the influence of the peak sintering temperature on the filling factor FF of the battery is studied. The hardness of the scraping strip is optimized and the multi-angle scraper is designed. and then, two-generation secondary printing is carried out at a multi-angle, the aspect ratio of the grid line sintering, the SEM image of the grid line, the I-V characteristic graph of the battery, the grid line resistance and the contact resistance value, the PL diagram of the battery are compared, the second generation secondary printing is obtained, the contact resistance of the second generation secondary printing is reduced by 4 m惟/ cm2, The grid line resistance is reduced by 0.11惟/ cm, and finally The conversion efficiency of the battery is improved by 0.3%.4. In the principle of the contact resistance formation, the secondary printing is similar to that of the electroplating electrode. In this paper, the electric power is studied under the two conditions of the same grid line shading area and different grid line spacing. the experimental results show that the solar cell has advantages in the series resistance through the plating electrode, which is very similar to the secondary printing,
【學(xué)位授予單位】：江南大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TM914.41
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