【摘要】：本文在分析總結(jié)電機系統(tǒng)可靠性研究現(xiàn)狀的基礎上，以開關磁阻電機系統(tǒng)為例給出了電機系統(tǒng)可靠性分析的方法。分析從系統(tǒng)級和器件級兩方面進行。系統(tǒng)級分析以評價開關磁阻電機系統(tǒng)整體的可靠性水平為目標，綜合考慮系統(tǒng)的拓撲結(jié)構(gòu)、控制策略、元器件的各種故障模式及組合對開關磁阻電機系統(tǒng)可靠性的影響。在MATLAB軟件平臺上建立了開關磁阻電機功能故障仿真模型，分析了元器件各種故障模式及組合對開關磁阻電機系統(tǒng)性能的影響，并與實物系統(tǒng)運行結(jié)果進行了比較，驗證了仿真模型的精確性。在此基礎上結(jié)合故障仿真結(jié)果與Markov理論構(gòu)建了開關磁阻電機系統(tǒng)的Markov可靠性模型，計算了開關磁阻電機系統(tǒng)的可靠性指標。器件級分析以功率MOSFET為主，，側(cè)重分析了由功率MOSFET封裝結(jié)構(gòu)、封裝材料與工作應力、環(huán)境應力相互作用而誘發(fā)的疲勞失效。首先，以有限元熱仿真結(jié)果為基礎，在MATLAB軟件平臺上創(chuàng)建了功率MOSFET的電-熱耦合模型，對功率MOSFET內(nèi)部封裝各層的瞬時運行溫度進行了估算；其次，結(jié)合雨流計數(shù)法、響應面設計法、熱應力有限元仿真建立了功率MOSFET的熱-機械耦合模型，給出了功率MOSFET累積塑性形變的計算方法；最后，以Miner線性累積理論為基礎，結(jié)合功率MOSFET的電-熱-機械耦合模型計算了器件的熱疲勞壽命。在此基礎上，總結(jié)并為后續(xù)系統(tǒng)改善設計及系統(tǒng)健康管理指明了方向。
[Abstract]:On the basis of analyzing and summarizing the present situation of the research on the reliability of the motor system, the method of reliability analysis of the motor system is given in this paper, taking the switched reluctance motor system as an example. The system level and device level are analyzed. The system level analysis is aimed at evaluating the reliability level of switched reluctance motor system. The system topology, control strategy, various fault modes of components and their combinations are considered comprehensively in order to evaluate the reliability of switched reluctance motor system. The functional fault simulation model of switched reluctance motor (SRM) is established on the platform of MATLAB software. The effects of various fault modes and combinations of components on the performance of SRM system are analyzed, and the results are compared with that of the real system. The accuracy of the simulation model is verified. Based on the fault simulation results and Markov theory, the Markov reliability model of switched reluctance motor system is constructed, and the reliability index of switched reluctance motor system is calculated. Power MOSFET is the main component level analysis. The fatigue failure induced by the interaction of power MOSFET packaging structure, encapsulation material and working stress and environmental stress is analyzed emphatically. Firstly, based on the results of finite element thermal simulation, the electric-thermal coupling model of power MOSFET is established on the MATLAB software platform, and the instantaneous operating temperature of each layer of power MOSFET is estimated. Secondly, combined with rain flow counting method, response surface design method and thermal stress finite element simulation, the thermal-mechanical coupling model of power MOSFET is established, and the calculation method of cumulative plastic deformation of power MOSFET is given. Finally, the thermal fatigue life of the device is calculated based on the Miner linear accumulation theory and the electric-thermal-mechanical coupling model of the power MOSFET. On this basis, the paper summarizes and points out the direction of system improvement design and system health management.
【學位授予單位】：中國礦業(yè)大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TM352

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