發(fā)布時間：2018-08-23 09:48

【摘要】：大功率變流器是智能電網(wǎng)的核心裝置,T字型三電平逆變電路是其中一種新型的應(yīng)用。IGBT作為系統(tǒng)中的核心部件,其行為特征與系統(tǒng)相互作用,是保障系統(tǒng)高可靠性、安全性以及效率的決定因素之一。本文以T字型三電平拓撲為切入點,研究IGBT的瞬態(tài)行為,從而為提升系統(tǒng)可靠性及優(yōu)化系統(tǒng)設(shè)計做出理論及實證支持。本文研究了T字型三電平逆變電路的14種換流模式。理論分析結(jié)果顯示：在每種輸出模式下,IGBT模塊會表現(xiàn)出特殊的瞬態(tài)行為特征,并會觸發(fā)IGBT的Vce退飽和檢測電路,使其產(chǎn)生誤觸發(fā)故障,停止輸出,關(guān)斷系統(tǒng),進而影響系統(tǒng)穩(wěn)定性。本文通過建立15kW逆變電路實驗平臺首次驗證了T字型三電平IGBT模塊對Vce退飽和檢測電路造成的誤觸發(fā)現(xiàn)象,也驗證了輸出電流和二極管的電容效應(yīng)會加劇該誤觸發(fā)幾率。同時根據(jù)實驗結(jié)果,得到了可改善該現(xiàn)象的控制策略。另外,本文針對T字型三電平電路大功率使用環(huán)境下對IGBT模塊并聯(lián)的需求,首次對該型IGBT模塊的并聯(lián)瞬態(tài)行為做了理論及實驗分析。具體地分析了結(jié)溫差異對并聯(lián)瞬態(tài)行為的影響,對比了T字型三電平與兩電平的并聯(lián)區(qū)別。實驗結(jié)果證明IGBT的并聯(lián)開通行為的一致性在一定溫差下能夠得到提升。而對關(guān)斷行為來說,當溫差增加時,其能量損耗不匹配度將上升,同時其過壓風險和di/dt風險也會加劇。并且,由于T字型的特殊拓撲,并聯(lián)時會形成多余的電流通道,增加損耗。最后,T字型三電平模塊的并聯(lián)效果優(yōu)于二電平并聯(lián)。本文的理論及實驗結(jié)果,不僅為電路的DSP實現(xiàn)或硬件驅(qū)動保護電路實現(xiàn)提供了參考意義,保護其不受非預(yù)期型故障的影響。同時也為T字型三電平逆變電路大功率實現(xiàn)過程中的散熱和結(jié)構(gòu)設(shè)計提供了改善指導(dǎo)意義。
[Abstract]:High-power converter is the core device of smart grid, the three-level inverter circuit is a new type of application. IGBT is the core component of the system. Its behavior characteristics interact with the system and ensure the high reliability of the system. One of the determinants of safety and efficiency. In this paper, the transient behavior of IGBT is studied by using T-shaped three-level topology as the starting point, which provides theoretical and empirical support for improving the reliability of the system and optimizing the design of the system. In this paper, 14 commutation modes of T-shaped three-level inverter circuits are studied. The results of theoretical analysis show that: in each output mode, the IGBT module will exhibit special transient behavior characteristics, and will trigger the Vce desaturation detection circuit of IGBT, which will cause the malfunction, stop the output and turn off the system. Then the stability of the system is affected. In this paper, an experimental platform of 15kW inverter circuit is established to verify for the first time the misfiring of T-shaped three-level IGBT module to Vce desaturation detection circuit. It is also verified that the output current and the capacitive effect of diode will aggravate the false trigger probability. At the same time, according to the experimental results, the control strategy to improve the phenomenon is obtained. In addition, aiming at the requirement of parallel connection of IGBT module in the high power environment of T-shaped three-level circuit, the transient behavior of this type of IGBT module is analyzed theoretically and experimentally for the first time. The effect of the end temperature difference on the transient behavior of parallel is analyzed and the parallel difference between T type three level and two level is compared. The experimental results show that the consistency of parallel opening behavior of IGBT can be improved under certain temperature difference. For turn-off behavior, when the temperature difference increases, the energy loss mismatch will increase, and the risk of overvoltage and di/dt will also increase. Moreover, due to the special topology of the T type, extra current channels will be formed in parallel, which will increase the loss. Finally, the parallel effect of T-shaped three-level module is better than that of two-level parallel. The theoretical and experimental results in this paper not only provide a reference for the DSP implementation of the circuit or the realization of the hardware drive protection circuit, but also protect it from unexpected faults. At the same time, it also provides guidance for the heat dissipation and structure design in the realization of high power T type three-level inverter circuit.
【學(xué)位授予單位】：復(fù)旦大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TM464

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本文編號：2198675