HIT太陽電池的制備與性能研究
發(fā)布時間：2018-08-16 18:58
【摘要】：開發(fā)低成本、穩(wěn)定以及高效的太陽能電池是光伏領域研究的目標，而HIT太陽電池既具有晶硅太陽電池的高效特性又具有薄膜太陽電池的低成本特點，成為光伏領域研究的熱點。本文利用射頻等離子體增強化學氣相沉積方法制備P型非晶硅薄膜材料及其在HIT太陽電池上的應用，并對界面鈍化進行實驗研究。主要研究包括以下內(nèi)容： 1、本論文以硅烷和硼烷作為反應氣體，氫氣作為稀釋氣體，在載玻片和單晶硅片上制備摻硼的非晶硅薄膜，系統(tǒng)研究了硅烷濃度、硼烷濃度、射頻功率、以及加熱溫度等工藝參數(shù)對P型非晶硅薄膜材料生長速率、電學性能、光學性能以及微結構特性的影響。結果表明：在研究的范圍內(nèi)，沉積工藝參數(shù)的增加都有助于薄膜材料的生長；薄膜的暗電導率隨著硅烷濃度的增加、硼烷濃度的增加和加熱溫度的增加都呈現(xiàn)上升的變化趨勢，而隨著射頻功率的增加，薄膜的暗電導率先上升后下降；薄膜的光學帶隙則隨著硅烷濃度的增加、硼烷濃度的減小、加熱溫度的降低和射頻功率的降低而增加；在硅烷濃度較高、硼烷濃度適中、烘烤適中和射頻功率較低制備的非晶硅薄膜的致密性較好。優(yōu)化沉積工藝參數(shù)獲得了優(yōu)質(zhì)的P型非晶硅薄膜，其生長速率約為0.16nm/s，，暗電導率約為8.5E-6S/cm，光學帶隙約為1.73eV。 2、在HIT太陽電池中，研究了氫處理和本征非晶硅薄膜的沉積工藝參數(shù)對界面鈍化質(zhì)量的影響。結果表明：電池的開路電壓隨著氫等離子體的射頻功率增加而呈現(xiàn)下降的變化趨勢；隨著氫處理時間的增加，電池的開路電壓先增加后降低，最佳處理時間為40s；沉積本征非晶硅薄膜時加熱溫度過高和射頻功率過低都會發(fā)生外延生長，嚴重影響電池的開路電壓；反應氣壓對電池的開路電壓影響較小。 3、對窗口層和本征鈍化層厚度進行優(yōu)化，厚度分別為10nm和4nm左右。測得的電池開路電壓都在0.55V左右，鈍化質(zhì)量和重復性都較好。QE和J-V特性測試結果表明：非晶硅薄膜材料太厚將增加對短波段光的吸收。通過優(yōu)化沉積工藝參數(shù)，制備出轉(zhuǎn)換效率為14.77%(Voc=0.568V，Isc=37.01mA/cm2，F(xiàn)F=0.703)的HIT太陽電池。
[Abstract]:The development of low cost, stable and efficient solar cells is the goal of photovoltaic research. HIT solar cells have both the high efficiency characteristics of crystalline silicon solar cells and the low cost characteristics of thin film solar cells, so it has become a hot spot in the field of photovoltaic research. P-type amorphous silicon thin films were prepared by radio-frequency plasma-enhanced chemical vapor deposition and their applications in HIT solar cells. The interface passivation was studied experimentally. The main contents are as follows: 1. In this thesis, boron doped amorphous silicon thin films were prepared on glass slide and single crystal silicon wafer using silane and borane as reaction gas and hydrogen as dilution gas. The concentration of silane was studied systematically. The effects of borane concentration, RF power and heating temperature on the growth rate, electrical properties, optical properties and microstructure of P-type amorphous silicon films were investigated. The results show that the increase of deposition parameters contributes to the growth of the films, and the dark conductivity of the films increases with the increase of silane concentration, the increase of borane concentration and the increase of heating temperature. The optical band gap increases with the increase of silane concentration, the decrease of borane concentration, the decrease of heating temperature and the decrease of RF power. The amorphous silicon films prepared with high concentration of silane, moderate concentration of borane, moderate baking and low RF power have better densification. High quality P type amorphous silicon thin films were obtained by optimizing the deposition parameters. The growth rate was about 0.16 nm / s, the dark conductivity was about 8.5 E-6S / cm, and the optical band gap was about 1.73 EV. 2. In HIT solar cells, The effects of hydrogen treatment and deposition parameters of intrinsic amorphous silicon film on the quality of interface passivation were studied. The results show that the open circuit voltage of the battery decreases with the increase of the RF power of the hydrogen plasma, and the open circuit voltage of the battery increases first and then decreases with the increase of the hydrogen treatment time, and the optimal treatment time is 40 s. When the intrinsic amorphous silicon film is deposited, the high heating temperature and the low RF power will produce the epitaxial growth, which seriously affects the open circuit voltage of the battery. The reaction pressure has little effect on the open circuit voltage of the battery. 3. The thickness of window layer and intrinsic passivation layer are optimized, the thickness is about 10nm and 4nm, respectively. The measured open circuit voltages are about 0.55 V, and the passivation quality and repeatability are good. The results show that the thickness of amorphous silicon thin films will increase the absorption of short band light. By optimizing the deposition process parameters, a HIT solar cell with a conversion efficiency of 14.77% (Voc0. 568 V ~ (-1) Isco 37. 01 Ma / 路m ~ (2) FF ~ (2) has been prepared.
【學位授予單位】：河北工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TM914.4
本文編號：2186879
[Abstract]:The development of low cost, stable and efficient solar cells is the goal of photovoltaic research. HIT solar cells have both the high efficiency characteristics of crystalline silicon solar cells and the low cost characteristics of thin film solar cells, so it has become a hot spot in the field of photovoltaic research. P-type amorphous silicon thin films were prepared by radio-frequency plasma-enhanced chemical vapor deposition and their applications in HIT solar cells. The interface passivation was studied experimentally. The main contents are as follows: 1. In this thesis, boron doped amorphous silicon thin films were prepared on glass slide and single crystal silicon wafer using silane and borane as reaction gas and hydrogen as dilution gas. The concentration of silane was studied systematically. The effects of borane concentration, RF power and heating temperature on the growth rate, electrical properties, optical properties and microstructure of P-type amorphous silicon films were investigated. The results show that the increase of deposition parameters contributes to the growth of the films, and the dark conductivity of the films increases with the increase of silane concentration, the increase of borane concentration and the increase of heating temperature. The optical band gap increases with the increase of silane concentration, the decrease of borane concentration, the decrease of heating temperature and the decrease of RF power. The amorphous silicon films prepared with high concentration of silane, moderate concentration of borane, moderate baking and low RF power have better densification. High quality P type amorphous silicon thin films were obtained by optimizing the deposition parameters. The growth rate was about 0.16 nm / s, the dark conductivity was about 8.5 E-6S / cm, and the optical band gap was about 1.73 EV. 2. In HIT solar cells, The effects of hydrogen treatment and deposition parameters of intrinsic amorphous silicon film on the quality of interface passivation were studied. The results show that the open circuit voltage of the battery decreases with the increase of the RF power of the hydrogen plasma, and the open circuit voltage of the battery increases first and then decreases with the increase of the hydrogen treatment time, and the optimal treatment time is 40 s. When the intrinsic amorphous silicon film is deposited, the high heating temperature and the low RF power will produce the epitaxial growth, which seriously affects the open circuit voltage of the battery. The reaction pressure has little effect on the open circuit voltage of the battery. 3. The thickness of window layer and intrinsic passivation layer are optimized, the thickness is about 10nm and 4nm, respectively. The measured open circuit voltages are about 0.55 V, and the passivation quality and repeatability are good. The results show that the thickness of amorphous silicon thin films will increase the absorption of short band light. By optimizing the deposition process parameters, a HIT solar cell with a conversion efficiency of 14.77% (Voc0. 568 V ~ (-1) Isco 37. 01 Ma / 路m ~ (2) FF ~ (2) has been prepared.
【學位授予單位】：河北工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TM914.4
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