硅納米線陣列的可控制備及新型異質(zhì)結(jié)太陽電池研究
發(fā)布時間：2018-08-04 15:26
【摘要】：太陽能是一種取之不盡、用之不竭的可再生清潔能源，有望成為21世紀(jì)主要的替代能源之一。光伏電池是將太陽能直接轉(zhuǎn)換為電能的核心器件。在目前的商業(yè)應(yīng)用中，最為常見的光伏電池包括單晶硅太陽電池與多晶硅太陽電池。但是，較高的發(fā)電成本、理論轉(zhuǎn)換效率的限制與彎折易破碎等問題阻礙了晶硅太陽電池的廣泛應(yīng)用。硅納米線陣列由于具有獨(dú)特的光學(xué)、光電、機(jī)械柔性等性質(zhì)被引入硅太陽電池的研究，為新一代硅太陽電池的低成本制作、轉(zhuǎn)化效率的提升及柔性功能的開發(fā)提供了新思路。基于此，本課題采用濕化學(xué)刻蝕方法，在單晶硅表面制備出均勻的硅納米線陣列，探索硅納米線的錐化機(jī)制及形成機(jī)理，調(diào)控硅納米線的尺寸、表面質(zhì)量與形貌，提升減反射與光吸收性能。在此基礎(chǔ)上，設(shè)計制備硅納米線/PEDOT:PSS異質(zhì)結(jié)太陽電池。開發(fā)硅納米線陣列轉(zhuǎn)移與硅片減薄的新技術(shù)，實現(xiàn)器件的柔性特征，其主要研究工作如下： 通過臭氧預(yù)處理使硅表面鈍化，促進(jìn)銀納米粒子在4英寸硅表面的均勻電鍍，獲得硅片級均勻的硅納米線陣列。系統(tǒng)研究了硅納米線的長度、填充率及表面質(zhì)量的調(diào)控方法。利用銀納米粒子在催化硅刻蝕中的連續(xù)溶解特征，制備出錐形的硅納米線陣列。提出自析出的K2SiF6晶體作為掩蔽進(jìn)行硅刻蝕，獲得硅微米柱/納米線復(fù)合陣列。 研究了單分散的貴金屬納米粒子、薄膜及具有納米孔薄膜的催化刻蝕特征，指出具有納米孔特征的貴金屬薄膜可促進(jìn)硅納米線陣列的形成。利用電子顯微鏡和電子自旋共振光譜儀探測了銀粒子在催化刻蝕硅中的形態(tài)變化，揭示了硅納米線的錐化機(jī)制。系統(tǒng)研究了單一型與混合型氧化劑的種類、濃度對硅納米線形貌的影響，闡明了硅納米線、多孔硅納米線、硅微米柱/納米線復(fù)合陣列及拋光硅的形成機(jī)理。研究了銀納米粒子在硅材料中的運(yùn)動方向，指出乙醇試劑可以誘導(dǎo)硅納米線的生成取向。 系統(tǒng)研究了硅納米線的長度、填充率、摻雜類型及濃度對其減反射性能的影響。建立了多孔錐形硅納米線的有效折射率模型，理論計算與實驗測試表明多孔錐形硅納米線在300-1700nm波段呈現(xiàn)出寬光譜減反射性能，，貴金屬納米粒子修飾能夠進(jìn)一步抑制在近紅外波段的反射損失。硅納米線陣列薄膜在550nm波段的光吸收率接近95%，硅納米線的多孔化進(jìn)一步提升長波段光吸收。 將PEDOT:PSS有機(jī)材料引入硅納米線陣列中，溶液法制備出硅納米線/PEDOT:PSS異質(zhì)結(jié)太陽電池。研究了上電極、PEDOT:PSS薄膜的厚度及摻雜、硅納米線的結(jié)構(gòu)參數(shù)對該電池光伏性能的影響。綜合優(yōu)化工藝技術(shù)后，電池效率提升至9.7%，并進(jìn)一步研究了相對濕度對該電池穩(wěn)定性的影響。 研究了硅微納結(jié)構(gòu)薄膜的關(guān)鍵制作工藝。一方面，采用化學(xué)刻蝕與電場輔助刻蝕的方法，誘導(dǎo)銀納米粒子的橫向刻蝕，在硅納米線陣列與硅基底之間生成裂痕，提升硅納米陣列的轉(zhuǎn)移質(zhì)量。另一方面，利用自主研發(fā)的貴金屬納米粒子催化硅減薄技術(shù)，獲得表面粗糙度為13nm、厚度低于30μm的超薄硅片，并在超薄硅片上構(gòu)筑微納結(jié)構(gòu)達(dá)到光吸收增強(qiáng)的目的。在此基礎(chǔ)上，搭建硅納米線/PEDOT:PSS異質(zhì)結(jié)柔性太陽電池的原型器件。
[Abstract]:Solar energy is an inexhaustible and inexhaustible renewable clean energy, which is expected to become one of the main alternative energy sources in the twenty-first Century. Photovoltaic cells are the core components of the direct conversion of solar energy into electrical energy. In the current commercial applications, the most common photovoltaic cells include single crystal silicon solar cells and polysilicon solar cells. The high cost of power generation, the limitation of theoretical conversion efficiency and the breakage of bending and easy breaking have hindered the wide application of crystalline silicon solar cells. The silicon nanowire array has been introduced into the research of silicon solar cells because of its unique optical, photoelectric, mechanical flexibility and other properties. It is the low cost production of the new generation of silicon solar cells, the improvement of the conversion efficiency and the softness of the new generation of silicon solar cells. The development of sexual function provides new ideas. Based on this, we use wet chemical etching method to prepare homogeneous silicon nanowire array on the surface of monocrystalline silicon, explore the coning mechanism and formation mechanism of silicon nanowires, regulate the size of silicon nanowires, surface quality and morphology, lift and reduce reflection and light absorption properties. On this basis, the design system is designed. The silicon nanowire /PEDOT:PSS heterojunction solar cell is used to develop the new technology of silicon nanowire array transfer and silicon wafer thinning to realize the flexible feature of the device. The main research work is as follows:
By ozone pretreatment, the silicon surface is passivated to promote the uniform electroplating of silver nanoparticles on the 4 inch silicon surface, and the silicon nanowire array is obtained. The length, filling rate and surface quality of the silicon nanowires are systematically studied. The cones are prepared by the continuous dissolution characteristics of silver nanoparticles in the etching of the catalytic silicon. A silicon nanowire array is proposed. A self etching K2SiF6 crystal is used as a mask to conduct silicon etching, and a silicon microcolumn / nanowire composite array is obtained.
The catalytic etching characteristics of monodisperse noble metal nanoparticles, thin films and nanoscale thin films are studied. It is pointed out that the noble metal films with nanoscale characteristics can promote the formation of silicon nanowire arrays. The morphological changes of silver particles in the catalytic etching of silicon are detected by electron microscope and electron spin resonance spectrometer. The mechanism of the coning of rice line. The effects of the type and concentration of single and mixed oxidants on the morphology of silicon nanowires were studied. The formation mechanism of silicon nanowires, porous silicon nanowires, silicon micron column / nanowire composite arrays and polished silicon were clarified. The direction of the movement of silver nanoparticles in silicon materials was studied. The generation orientation of silicon guided nanowires.
The effect of the length, filling rate, type and concentration of silicon nanowires on its antireflection properties was studied. The effective refractive index model of the porous tapered silicon nanowires was established. The theoretical calculation and experimental test showed that the porous tapered silicon nanowires showed a broad spectral reflectance in the 300-1700nm band, and the modified energy of the noble metal nanoparticles. The reflection loss in the near infrared band is further suppressed. The optical absorption rate of the silicon nanowire array film in the 550nm band is close to 95%, and the porous silicon nanowires can further enhance the optical absorption of the long band.
The PEDOT:PSS organic material was introduced into the silicon nanowire array and the silicon nanowire /PEDOT:PSS heterojunction solar cell was prepared by solution method. The thickness and doping of the upper electrode, the PEDOT:PSS film and the structure parameters of the silicon nanowire on the photovoltaic performance of the cell were studied. The efficiency of the battery was increased to 9.7% after a comprehensive optimization technique and further research was carried out. The effect of relative humidity on the stability of the battery was investigated.
On the one hand, the chemical etching and electric field assisted etching are used to induce the transverse etching of the silver nanoparticles, to create a fissure between the silicon nanowire array and the silicon substrate, and to improve the transfer quality of the silicon nanowire arrays. The other side, using the self developed noble metal nanoparticles, is used as a catalyst. Silicon thinning technique is used to obtain ultra thin silicon with a surface roughness of 13nm and a thickness of less than 30 u m, and to build a micro nano structure on ultra thin silicon to achieve light absorption enhancement. On this basis, a prototype device for the /PEDOT:PSS heterojunction flexible solar cell of silicon nanowires is built.
【學(xué)位授予單位】：哈爾濱工業(yè)大學(xué)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2014
【分類號】：TB383.1;TM914.4
本文編號：2164306
[Abstract]:Solar energy is an inexhaustible and inexhaustible renewable clean energy, which is expected to become one of the main alternative energy sources in the twenty-first Century. Photovoltaic cells are the core components of the direct conversion of solar energy into electrical energy. In the current commercial applications, the most common photovoltaic cells include single crystal silicon solar cells and polysilicon solar cells. The high cost of power generation, the limitation of theoretical conversion efficiency and the breakage of bending and easy breaking have hindered the wide application of crystalline silicon solar cells. The silicon nanowire array has been introduced into the research of silicon solar cells because of its unique optical, photoelectric, mechanical flexibility and other properties. It is the low cost production of the new generation of silicon solar cells, the improvement of the conversion efficiency and the softness of the new generation of silicon solar cells. The development of sexual function provides new ideas. Based on this, we use wet chemical etching method to prepare homogeneous silicon nanowire array on the surface of monocrystalline silicon, explore the coning mechanism and formation mechanism of silicon nanowires, regulate the size of silicon nanowires, surface quality and morphology, lift and reduce reflection and light absorption properties. On this basis, the design system is designed. The silicon nanowire /PEDOT:PSS heterojunction solar cell is used to develop the new technology of silicon nanowire array transfer and silicon wafer thinning to realize the flexible feature of the device. The main research work is as follows:
By ozone pretreatment, the silicon surface is passivated to promote the uniform electroplating of silver nanoparticles on the 4 inch silicon surface, and the silicon nanowire array is obtained. The length, filling rate and surface quality of the silicon nanowires are systematically studied. The cones are prepared by the continuous dissolution characteristics of silver nanoparticles in the etching of the catalytic silicon. A silicon nanowire array is proposed. A self etching K2SiF6 crystal is used as a mask to conduct silicon etching, and a silicon microcolumn / nanowire composite array is obtained.
The catalytic etching characteristics of monodisperse noble metal nanoparticles, thin films and nanoscale thin films are studied. It is pointed out that the noble metal films with nanoscale characteristics can promote the formation of silicon nanowire arrays. The morphological changes of silver particles in the catalytic etching of silicon are detected by electron microscope and electron spin resonance spectrometer. The mechanism of the coning of rice line. The effects of the type and concentration of single and mixed oxidants on the morphology of silicon nanowires were studied. The formation mechanism of silicon nanowires, porous silicon nanowires, silicon micron column / nanowire composite arrays and polished silicon were clarified. The direction of the movement of silver nanoparticles in silicon materials was studied. The generation orientation of silicon guided nanowires.
The effect of the length, filling rate, type and concentration of silicon nanowires on its antireflection properties was studied. The effective refractive index model of the porous tapered silicon nanowires was established. The theoretical calculation and experimental test showed that the porous tapered silicon nanowires showed a broad spectral reflectance in the 300-1700nm band, and the modified energy of the noble metal nanoparticles. The reflection loss in the near infrared band is further suppressed. The optical absorption rate of the silicon nanowire array film in the 550nm band is close to 95%, and the porous silicon nanowires can further enhance the optical absorption of the long band.
The PEDOT:PSS organic material was introduced into the silicon nanowire array and the silicon nanowire /PEDOT:PSS heterojunction solar cell was prepared by solution method. The thickness and doping of the upper electrode, the PEDOT:PSS film and the structure parameters of the silicon nanowire on the photovoltaic performance of the cell were studied. The efficiency of the battery was increased to 9.7% after a comprehensive optimization technique and further research was carried out. The effect of relative humidity on the stability of the battery was investigated.
On the one hand, the chemical etching and electric field assisted etching are used to induce the transverse etching of the silver nanoparticles, to create a fissure between the silicon nanowire array and the silicon substrate, and to improve the transfer quality of the silicon nanowire arrays. The other side, using the self developed noble metal nanoparticles, is used as a catalyst. Silicon thinning technique is used to obtain ultra thin silicon with a surface roughness of 13nm and a thickness of less than 30 u m, and to build a micro nano structure on ultra thin silicon to achieve light absorption enhancement. On this basis, a prototype device for the /PEDOT:PSS heterojunction flexible solar cell of silicon nanowires is built.
【學(xué)位授予單位】：哈爾濱工業(yè)大學(xué)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2014
【分類號】：TB383.1;TM914.4
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