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水浴溫度對(duì)CdS薄膜性能的影響

發(fā)布時(shí)間:2018-07-28 08:54
【摘要】:采用化學(xué)水浴法,以不同水浴溫度在玻璃襯底上沉積CdS薄膜并制備CIGS薄膜太陽(yáng)能電池,研究了水浴溫度對(duì)CdS薄膜和CIGS太陽(yáng)能電池性能的影響。結(jié)果表明:水浴溫度對(duì)CdS薄膜的致密性、沉積速率、透過率和成分比率都有影響。在65-80℃之間制備的CdS薄膜均勻致密且透過率高,可作為CIGS太陽(yáng)能電池的緩沖層;另外,CdS緩沖層的厚度對(duì)CIGS電池的性能影響顯著,較薄的CdS緩沖層能夠增加CIGS電池在400-500nm波段對(duì)光線的吸收,提高CIGS電池的短路電流。
[Abstract]:CdS thin films were deposited on glass substrates and CIGS thin film solar cells were prepared by chemical water bath method. The effects of water bath temperature on the properties of CdS thin films and CIGS solar cells were studied. The results show that the water bath temperature has an effect on the density, deposition rate, transmittance and composition ratio of CdS films. The CdS thin films prepared at 65-80 鈩,

本文編號(hào):2149574

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