本文選題：SiC + MOSFET��； 參考：《浙江大學(xué)》2014年碩士論文

【摘要】：SiC功率器件優(yōu)異的性能引起了廣泛關(guān)注,在光伏發(fā)電中應(yīng)用研究也是當(dāng)前的熱點(diǎn)。對(duì)單相光伏逆變的主要結(jié)構(gòu)以及常用的單相逆變器結(jié)構(gòu)進(jìn)行了綜述,逆變器是光伏逆變器系統(tǒng)的核心環(huán)節(jié),本文將SiC MOSFET應(yīng)用于光伏逆變器中,研究SiC MOSFET對(duì)于逆變器效率提升的影響。 SiC MOSFET的特性與傳統(tǒng)的Si MOSFET有很大的差別,而且常用于高速開關(guān)的場(chǎng)合,易出現(xiàn)誤觸發(fā)現(xiàn)象。根據(jù)SiC MOSFET的特性以及應(yīng)用特點(diǎn),在電路結(jié)構(gòu)、電阻設(shè)計(jì)、驅(qū)動(dòng)電壓、可靠性設(shè)計(jì)等方面進(jìn)行綜合考慮,設(shè)計(jì)了SiC MOSFET驅(qū)動(dòng)電路。 SiC MOSFET體二極管反向恢復(fù)特性優(yōu)異,能夠直接應(yīng)用于全橋硬開關(guān)逆變器中,為了提升逆變器的功率密度,將SiC MOSFET全橋逆變器的開關(guān)頻率提高至100kHz,對(duì)逆變器的主要參數(shù)進(jìn)行了設(shè)計(jì)。器件工作于硬開關(guān)狀態(tài),根據(jù)電路的工作狀態(tài),進(jìn)行了逆變器布局優(yōu)化,以減小關(guān)鍵回路上的雜散電感；并分析了逆變器的效率,與基于Si MOSFET的20kHz H6逆變器進(jìn)行了效率對(duì)比；同時(shí)將SiC MOSFET全橋逆變器的工作頻率降低至20kHz,并進(jìn)行了效率分析。最后搭建了實(shí)驗(yàn)平臺(tái),測(cè)試了相應(yīng)的效率曲線,并進(jìn)行了對(duì)比。 對(duì)100kHz的SiC MOSFET全橋逆變器的損耗進(jìn)行了研究分析,找出影響其效率的主要因素。為了進(jìn)一步提高逆變器的效率,根據(jù)逆變器的工作狀態(tài),在逆變器中采用了ZVS軟開關(guān)技術(shù)。首先對(duì)軟開關(guān)電路的工作過程進(jìn)行了闡述,并進(jìn)行了相關(guān)參數(shù)的設(shè)計(jì)；其次,根據(jù)電路的工作狀態(tài),對(duì)軟開關(guān)逆變器的效率進(jìn)行了分析,并與硬開關(guān)全橋逆變器的效率進(jìn)行了對(duì)比。搭建了SiC MOSFET軟開關(guān)逆變器實(shí)驗(yàn)平臺(tái),觀察逆變器的工作波形,與理論分析進(jìn)行對(duì)比,驗(yàn)證該軟開關(guān)技術(shù)的合理性；測(cè)試逆變器的效率,在不同的功率下調(diào)整軟開關(guān)的相關(guān)參數(shù),使逆變器的效率最大化,并將軟開關(guān)逆變器的實(shí)驗(yàn)效率曲線與硬開關(guān)的效率曲線進(jìn)行對(duì)比。
[Abstract]:The excellent performance of sic power devices has attracted wide attention, and the application of sic power devices in photovoltaic power generation is also a hot spot. The main structure of single-phase photovoltaic inverter and the common single-phase inverter structure are summarized. The inverter is the core link of photovoltaic inverter system. In this paper, sic MOSFET is applied to photovoltaic inverter. The effect of sic MOSFET on the efficiency of inverter is studied. The characteristics of sic MOSFET are very different from those of traditional Si MOSFET. According to the characteristics and application characteristics of sic MOSFET, the drive circuit of sic MOSFET is designed in terms of circuit structure, resistance design, drive voltage and reliability design. In order to increase the power density of the inverter, the switching frequency of sic MOSFET full-bridge inverter is raised to 100 kHz. The main parameters of the inverter are designed. According to the working state of the circuit, the inverter layout is optimized to reduce the stray inductance in the key circuit, and the efficiency of the inverter is analyzed, which is compared with the 20kHz H6 inverter based on Si MOSFET. At the same time, the operating frequency of sic MOSFET full-bridge inverter is reduced to 20 kHz, and the efficiency is analyzed. Finally, the experiment platform is built, and the corresponding efficiency curve is tested and compared. The loss of 100 kHz sic MOSFET full-bridge inverter is analyzed and the main factors affecting its efficiency are found out. In order to further improve the efficiency of the inverter, ZVS soft switching technology is adopted in the inverter according to the working state of the inverter. First of all, the working process of soft-switching circuit is described, and the design of related parameters is carried out. Secondly, according to the working state of the circuit, the efficiency of soft-switching inverter is analyzed. The efficiency of the inverter is compared with that of the hard switching full-bridge inverter. The experimental platform of sic MOSFET soft switching inverter is built, the working waveform of the inverter is observed and compared with the theoretical analysis, the rationality of the soft switching technology is verified, the efficiency of the inverter is tested, and the relevant parameters of the soft switch are adjusted at different power levels. The efficiency of the inverter is maximized and the experimental efficiency curve of the soft-switching inverter is compared with that of the hard-switching inverter.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM464

【參考文獻(xiàn)】

相關(guān)期刊論文 前2條

1 錢照明,張軍明,呂征宇,彭方正,汪i襠，

本文編號(hào)：2082468