本文選題：染料敏化太陽(yáng)能電池 + 對(duì)電極��； 參考：《中國(guó)礦業(yè)大學(xué)》2014年博士論文

【摘要】：探索染料敏化太陽(yáng)能電池（DSSC）對(duì)電極非鉑新材料以及深入探究對(duì)電極電子輸運(yùn)機(jī)理已成為該領(lǐng)域關(guān)鍵課題之一。本論文圍繞多元硒/硫化物及其復(fù)合材料的合成以及在DSSC對(duì)電極的應(yīng)用展開(kāi)研究。在材料合成方面，探索多元硒/硫化物及其復(fù)合材料的可控合成方法，努力突破困擾多元化合物合成的技術(shù)瓶頸，為實(shí)現(xiàn)該類材料的可控合成奠定基礎(chǔ)；在電極制備方面，探索硒/硫化物等對(duì)電極的制備技術(shù)方法，優(yōu)化制備工藝參數(shù)，為該類對(duì)電極的制備提供實(shí)驗(yàn)基礎(chǔ)；在性能檢測(cè)與表征方面，針對(duì)硒/硫化物等的材料特性與對(duì)電極的結(jié)構(gòu)特點(diǎn)，建立了一種窄帶系半導(dǎo)體化合物作對(duì)電極的性能表征體系，準(zhǔn)確深入的表征該類對(duì)電極催化材料的綜合電化學(xué)性能；在電子輸運(yùn)機(jī)理研究方面，探究硒/硫化物及其復(fù)合材料對(duì)電極的電子輸運(yùn)本質(zhì)，為新型對(duì)電極的選材與結(jié)構(gòu)設(shè)計(jì)提供了理論基礎(chǔ)。 發(fā)展了一種簡(jiǎn)易制備多元硒/硫化物納米材料的方法。采用溶劑熱合成法，在綠色、溫和的條件下合成硒/硫化物納米晶，以乙二胺為溶劑和表面活性劑，實(shí)現(xiàn)了多元硒化物Cu2ZnSnSe4、Cu2SnSe3和多元硫化物Cu2ZnSnS4納米材料的可控合成�？朔硕嘣衔锖铣傻募夹g(shù)瓶頸，合成的納米材料形貌規(guī)則、尺寸均勻、物相純凈且化學(xué)計(jì)量比準(zhǔn)確。將合成的納米顆粒配制成“墨水”，，采用滴涂和旋涂等工藝在FTO導(dǎo)電襯底上沉積薄膜并用作DSSC對(duì)電極催化層。研究了薄膜厚度、退火溫度等工藝參數(shù)對(duì)DSSC光電性能和對(duì)電極電化學(xué)性能的影響，探索出制備Cu2ZnSnSe4、Cu2SnSe3和Cu2ZnSnS4對(duì)電極的最佳工藝路線。針對(duì)這類窄帶系半導(dǎo)體化合物的能級(jí)結(jié)構(gòu)特點(diǎn)和對(duì)電極的結(jié)構(gòu)特點(diǎn)，建立光照對(duì)稱電池測(cè)量方法，即采用對(duì)電極-電解液-對(duì)電極的對(duì)稱電池結(jié)構(gòu)，在光照下進(jìn)行電化學(xué)性能表征測(cè)試。該法避免了對(duì)電極受到光效應(yīng)和電效應(yīng)的交互影響，考察光效應(yīng)和電效應(yīng)分別對(duì)這類對(duì)電極的電化學(xué)性能影響，可以真實(shí)、準(zhǔn)確的表征該類對(duì)電極的綜合電化學(xué)性能。分析了Cu2ZnSnSe4、Cu2SnSe3和Cu2ZnSnS4等對(duì)電極的電子輸運(yùn)機(jī)理。與傳統(tǒng)的Pt等對(duì)電極的電子輸運(yùn)過(guò)程分兩個(gè)步驟不同，窄帶系半導(dǎo)體化合物對(duì)電極的電子輸運(yùn)除了從外電路接收電子和供給電子給電解液中的I3-，還需把電子從半導(dǎo)體的價(jià)帶激發(fā)到導(dǎo)帶，而光電陽(yáng)極的透射光可以激發(fā)電子從半導(dǎo)體價(jià)帶躍遷到導(dǎo)帶。該類對(duì)電極電化學(xué)性能主要受電子激發(fā)的制約，而激發(fā)到導(dǎo)帶中的電子易與電解液中的I3-結(jié)合，實(shí)現(xiàn)對(duì)I3-的還原。 發(fā)展了一種疊層結(jié)構(gòu)的DSSC復(fù)合對(duì)電極。以晶體結(jié)構(gòu)、電子結(jié)構(gòu)相匹配的Cu2ZnSnS4和Cu2ZnSnSe4為組元，采用旋涂-干燥-旋涂方式，實(shí)現(xiàn)了對(duì)疊層復(fù)合對(duì)電極的可控制備。利用Cu2ZnSnS4和Cu2ZnSnSe4吸光特性不同，制備的疊層對(duì)電極結(jié)構(gòu)可以更大限度的起到光陷作用，提高對(duì)電極半導(dǎo)體材料內(nèi)部的電子激發(fā)，電子激發(fā)效率的提高有利于電子從對(duì)電極轉(zhuǎn)移到電解液。實(shí)驗(yàn)結(jié)果表明：以Cu2ZnSnS4/Cu2ZnSnSe4疊層結(jié)構(gòu)為對(duì)電極的DSSC的轉(zhuǎn)化效率得到了明顯的提高。 發(fā)展了一種Cu2ZnSnS4/MWCNT納米復(fù)合對(duì)電極材料。針對(duì)Cu2ZnSnS4等多元半導(dǎo)體硒/硫化物導(dǎo)電性能不強(qiáng)，構(gòu)建了以Cu2ZnSnS4和MWCNT為組元的“電催化活性納米晶/導(dǎo)電相”立體網(wǎng)絡(luò)導(dǎo)電介孔膜結(jié)構(gòu)，在半導(dǎo)體化合物中加入導(dǎo)電相MWCNT改善Cu2ZnSnS4等對(duì)電極的導(dǎo)電性能。立體網(wǎng)絡(luò)導(dǎo)電介孔膜結(jié)構(gòu)以MWCNT為骨架，為催化層內(nèi)部的電子提供了轉(zhuǎn)移到對(duì)電極/電解液的界面的快速通道，介孔膜結(jié)構(gòu)擁有巨大的催化面積，有利于增加對(duì)電極的催化點(diǎn)位。Cu2ZnSnS4/MWCNT納米復(fù)合對(duì)電極材料因同時(shí)具有較高的電催化活性和導(dǎo)電性而表現(xiàn)出優(yōu)秀的綜合電化學(xué)性能。以Cu2ZnSnS4/MWCNT為對(duì)電極的DSSC的轉(zhuǎn)化效率與Pt相當(dāng)，在制備成本和穩(wěn)定性等方面又獨(dú)具優(yōu)勢(shì)，是一種替代Pt的理想的對(duì)電極材料。
[Abstract]:This paper studies the synthesis of multi - element selenium / sulfide and its composite material and its application in the application of DSSC to the electrode . In the aspect of material synthesis , we explore the controllable synthesis method of multi - element selenium / sulfide and its composite material .
In the aspect of electrode preparation , the preparation technology of the counter electrode such as selenium / sulfide is explored , the preparation process parameters are optimized , and the experimental basis is provided for the preparation of the counter electrode of the class ;
In the aspect of performance detection and characterization , the performance characterization system of the narrow band semiconductor compound on the electrode was established for the characteristics of the materials and the structure characteristics of the counter electrode .
In the research of electron transport mechanism , the electron transport essence of selenium / sulfide and its composite material is investigated , which provides a theoretical basis for the selection and structural design of the novel counter electrode .

A simple method for preparing multi - element selenium / sulfide nano - material is developed . The synthesis of Cu 2ZnSnSe4 , Cu2SnSe3 and Cu2ZnSnS4 nano - material is carried out by using solvent thermal synthesis method under the condition of green and mild conditions . The electron transport mechanism of Cu2ZnSnSe4 , Cu2SnSe3 and Cu2ZnSnS4 nano - material is studied .

By using Cu2ZnSnS4 and Cu2ZnSnSe4 as the component , the structure of the laminated counter electrode can be controlled by the spin coating - drying - spin coating method . The structure of the laminated counter electrode can play a light trapping function to the limit of the electrode structure . The results show that the conversion efficiency of the DSSC with Cu2ZnSnS4 / Cu2ZnSnSe4 laminated structure as the counter electrode is obviously improved .

Cu2ZnSnS4 / MWCNT composite counter electrode material has excellent comprehensive electrochemical performance . Cu2ZnSnS4 / MWCNT composite counter electrode material has excellent comprehensive electrochemical performance . Cu2ZnSnS4 / MWCNT composite counter electrode material has high catalytic activity and conductivity .
【學(xué)位授予單位】：中國(guó)礦業(yè)大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM914.4

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 朱磊;強(qiáng)穎懷;趙宇龍;顧修全;宋端鳴;宋昌斌;;簡(jiǎn)易合成Cu_2SnSe_3作染料敏化太陽(yáng)能電池對(duì)電極(英文)[J];物理化學(xué)學(xué)報(bào);2013年11期

本文編號(hào)：2006549