發(fā)布時間：2018-06-05 19:15

  本文選題：RF + MEMS�。� 參考：《強激光與粒子束》2014年12期

【摘要】：電容式RF MEMS開關(guān)在控制高功率射頻信號時會發(fā)生自鎖失效,由于開關(guān)橋膜與介電層之間的粗糙接觸,開關(guān)的down態(tài)電容會發(fā)生退化,因此很難建立開關(guān)自鎖失效閾值功率的高保真預(yù)測模型。提出了3D電磁-等效電路仿真對比建模的方法。建立開關(guān)的3D電磁仿真模型,仿真得到具有任一表面粗糙度水平的介電層粗糙開關(guān)的隔離度(S21)曲線;再建立同一開關(guān)的等效電路模型,通過調(diào)諧其down態(tài)電容值,使得仿真得到的S21曲線與3D電磁模型仿真結(jié)果盡可能吻合;此時,可以確定一組根據(jù)開關(guān)3D電磁仿真模型設(shè)定的表面粗糙度水平與等效電路模型調(diào)諧好的down態(tài)電容值的關(guān)系;改變開關(guān)介電層的表面粗糙度水平,并重復(fù)上述步驟,確定了任一開關(guān)的介電層表面粗糙度與開關(guān)down態(tài)電容退化的關(guān)系。采用文獻(xiàn)的down態(tài)電容實測數(shù)據(jù),初步驗證了該方法的可行性和合理性。并利用所得的開關(guān)down態(tài)電容隨介電層表面粗糙度退化的特性,對簡化的(介電層光滑)開關(guān)自鎖失效閾值功率解析計算式進(jìn)行了修訂,可擴展用于預(yù)測介電層粗糙開關(guān)的功率容量。
[Abstract]:The capacitive RF MEMS switch will have self-locking failure when controlling the high power RF signal. Due to the rough contact between the bridge membrane and the dielectric layer, the down state capacitance of the switch will degenerate. Therefore, it is difficult to establish a high fidelity prediction model of self-locking failure threshold power. A method of 3D electromagnetic-equivalent circuit simulation and contrast modeling is presented. The 3D electromagnetic simulation model of the switch is established, and the isolating degree S21 curve of the dielectric layer rough switch with any surface roughness level is obtained, and the equivalent circuit model of the same switch is established, and its down state capacitance is tuned. The S21 curve is consistent with the simulation results of 3D electromagnetic model as much as possible. In this case, the relationship between the surface roughness level set according to the 3D electromagnetic simulation model and the tuned capacitance of the equivalent circuit model can be determined. By changing the surface roughness level of the dielectric layer and repeating the above steps, the relationship between the surface roughness of the dielectric layer of any switch and the capacitance degradation of the switching down state is determined. The feasibility and rationality of this method are preliminarily verified by using the measured data of down state capacitance in literature. Based on the characteristic that the down state capacitance of the switch degenerates with the surface roughness of the dielectric layer, the simplified analytical formula of the self-locking failure threshold power of the (dielectric layer smooth) switch is revised. It can be extended to predict the power capacity of the dielectric layer rough switch.
【作者單位】： 西南科技大學(xué)信息工程學(xué)院;中國工程物理研究院電子工程研究所;重慶大學(xué)新型微納器件與系統(tǒng)技術(shù)國防重點學(xué)科實驗室;重慶大學(xué)光電技術(shù)及系統(tǒng)教育部重點實驗室;
【基金】：中國工程物理研究院超精密加工技術(shù)重點實驗室基金項目(ZZ14001,2012CJMZZ00009) 重慶大學(xué)光電技術(shù)及系統(tǒng)教育部重點實驗室訪問學(xué)者基金項目 重慶大學(xué)新型微納器件與系統(tǒng)技術(shù)國防重點學(xué)科實驗室訪問學(xué)者基金項目(2013MS04) 中國工程物理研究院電子工程研究所創(chuàng)新基金項目(S20141203) 西南科技大學(xué)研究生創(chuàng)新基金項目(14YCX107,14YCX109,14YCX111)
【分類號】：TM564

【參考文獻(xiàn)】

相關(guān)期刊論文 前4條

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本文編號：1983122