發(fā)布時(shí)間：2018-06-02 23:02

  本文選題：特高壓GIS + 盆式絕緣子　； 參考：《華北電力大學(xué)》2014年碩士論文

【摘要】：特高壓電網(wǎng)是未來(lái)電網(wǎng)戰(zhàn)略發(fā)展的重要方向,特高壓電網(wǎng)建設(shè)中,開(kāi)關(guān)設(shè)備均選用GIS或者HGIS。晉東南—南陽(yáng)—荊門1000kV特高壓交流試驗(yàn)示范工程已經(jīng)正式投運(yùn)3年來(lái),已經(jīng)發(fā)現(xiàn)2支存在裂紋缺陷的盆式絕緣子,而現(xiàn)場(chǎng)特高頻局放檢測(cè)裝置未能提前預(yù)警。特高壓盆式絕緣子作為氣體絕緣組合開(kāi)關(guān)(GIS)的核心零部件,其絕緣性能直接關(guān)系到電網(wǎng)的安全穩(wěn)定運(yùn)行。目前國(guó)內(nèi)外對(duì)于特高壓盆式絕緣子狀態(tài)監(jiān)測(cè)和缺陷的早期預(yù)警技術(shù)仍不成熟,現(xiàn)有的局放檢測(cè)方法對(duì)特高壓盆式絕緣子缺陷類型診斷的適用性仍不清晰。因此,通過(guò)有限元分析方法研究不同形式裂紋缺陷對(duì)特高壓盆式絕緣子電場(chǎng)強(qiáng)度分布特性的影響,并通過(guò)局放檢測(cè)的方法研究現(xiàn)有檢測(cè)手段對(duì)特高壓盆式絕緣子裂紋缺陷的適用性,以及特高壓盆式絕緣子裂紋缺陷的放電發(fā)展規(guī)律,對(duì)于提高現(xiàn)場(chǎng)狀態(tài)檢測(cè)的準(zhǔn)確性可靠性,保障電網(wǎng)安全穩(wěn)定運(yùn)行具有十分重要意義。 本文為了研究裂紋對(duì)特高壓盆式絕緣子的電場(chǎng)分布的影響,基于有限元數(shù)值分析的方法,建立了特高壓盆式絕緣子的靜電場(chǎng)分析模型,對(duì)多種電壓等級(jí)無(wú)裂紋缺陷的盆式絕緣子電場(chǎng)分布進(jìn)行了計(jì)算,并對(duì)存在裂紋缺陷的特高壓盆式絕緣子的電場(chǎng)分布進(jìn)行了計(jì)算。通過(guò)仿真得到了特高壓盆式絕緣子在工作電壓下的最大場(chǎng)強(qiáng),最小場(chǎng)強(qiáng),平均場(chǎng)強(qiáng)；存在裂紋缺陷狀態(tài)下裂紋的厚度、位置、發(fā)展方向?qū)^緣子電場(chǎng)分布的影響。 本文為了對(duì)特高壓盆式絕緣子裂紋缺陷開(kāi)展實(shí)驗(yàn)研究,對(duì)特高壓盆式絕緣子裂紋缺陷放電環(huán)境進(jìn)行了模擬,綜合考慮了SF6氣體、環(huán)氧樹(shù)脂材料特性、絕緣子電場(chǎng)分布、電壓等級(jí)等因素,在252kV GIS內(nèi)搭建了特高壓盆式絕緣子裂紋缺陷放電試驗(yàn)平臺(tái)。并設(shè)計(jì)加工了特高壓盆式絕緣子裂紋缺陷試驗(yàn)?zāi)Ｐ汀?本文為了對(duì)特高壓盆式絕緣子裂紋缺陷放電特性進(jìn)行試驗(yàn)研究,設(shè)計(jì)了多種不同形式的盆式絕緣子裂紋缺陷模型,綜合考慮了裂紋的厚度、方向、位置等影響因素,使用特高頻法、常規(guī)脈沖電流法兩種方法對(duì)放電現(xiàn)象進(jìn)行檢測(cè),分析兩種方法的檢測(cè)效果,并對(duì)放電規(guī)律進(jìn)行了總結(jié)。
[Abstract]:UHV power grid is an important direction in the future development of grid strategy. In the construction of UHV power grid, GIS or HGIs is used as the switchgear. In the past three years, two basin insulators with crack defects have been found in the 1000kV UHV test and demonstration project in southeast Shanxi, Nanyang and Jingmen, and the UHF PD detection device in the field has not been able to give early warning. As the core parts of GISs, the insulation performance of UHV basin insulators is directly related to the safe and stable operation of power grid. At present, the status monitoring and early warning technology of UHV basin insulators are still immature, and the applicability of existing partial discharge detection methods to the diagnosis of UHV basin insulators defect types is still unclear. Therefore, the influence of crack defects in different forms on the distribution of electric field intensity of UHV basin insulators is studied by means of finite element analysis (FEM). By means of partial discharge detection, the applicability of existing detection methods to crack defects in UHV basin insulators and the discharge development law of crack defects in UHV basin insulators are studied, which can improve the accuracy and reliability of field state detection. It is very important to ensure the safe and stable operation of power grid. In order to study the effect of crack on electric field distribution of UHV basin insulator, the electrostatic field analysis model of UHV basin insulator is established based on finite element numerical analysis method. The electric field distribution of basin insulator with various voltage levels without crack defects is calculated, and the electric field distribution of ultra high voltage basin insulator with crack defect is calculated. The maximum, minimum and average field strength of the UHV basin insulator under the working voltage and the influence of the crack thickness, position and development direction on the insulator electric field distribution under the condition of crack defect are obtained by simulation. In order to study the crack defect of UHV basin insulator, the discharge environment of crack defect in UHV basin insulator is simulated in this paper. The characteristics of SF6 gas, epoxy resin material and the electric field distribution of insulator are considered synthetically. Based on the voltage level and other factors, an ultra high voltage (UHV) basin-type insulator crack discharge test platform was built in 252kV GIS. An experimental model for crack defects of an UHV basin insulator is designed and manufactured. In this paper, in order to study the discharge characteristics of crack defect in UHV basin insulator, several kinds of crack defect models of basin insulator are designed, and the influence factors such as crack thickness, direction and position are considered synthetically. UHF method and conventional pulse current method are used to detect the discharge phenomenon. The detection results of the two methods are analyzed and the discharge law is summarized.
【學(xué)位授予單位】：華北電力大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM855;TM216

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 郭俊,吳廣寧,張血琴,舒雯;局部放電檢測(cè)技術(shù)的現(xiàn)狀和發(fā)展[J];電工技術(shù)學(xué)報(bào);2005年02期

2 許建春;盧鵬;;1100kV GIS盆式絕緣子的性能[J];電力建設(shè);2010年08期

3 李建基;;特高壓電網(wǎng)與開(kāi)關(guān)設(shè)備[J];電器工業(yè);2008年11期

4 劉華枝;王煥;;淺談盤(pán)式絕緣子電場(chǎng)優(yōu)化設(shè)計(jì)[J];電氣制造;2007年11期

5 舒印彪;1000kV交流特高壓輸電技術(shù)的研究與應(yīng)用[J];電網(wǎng)技術(shù);2005年19期

6 張運(yùn)洲;對(duì)我國(guó)特高壓輸電規(guī)劃中幾個(gè)問(wèn)題的探討[J];電網(wǎng)技術(shù);2005年19期

7 黃興泉;康書(shū)英;李泓志;;GIS局部放電超高頻檢測(cè)法有關(guān)問(wèn)題的仿真研究[J];電網(wǎng)技術(shù);2006年07期

8 唐炬;謝顏斌;周倩;張曉星;;氣體絕緣組合電器內(nèi)絕緣缺陷超高頻局部放電信號(hào)特性[J];重慶大學(xué)學(xué)報(bào);2009年10期

9 張曉星;姚堯;唐炬;孫才新;萬(wàn)凌云;;SF_6放電分解氣體組分分析的現(xiàn)狀和發(fā)展[J];高電壓技術(shù);2008年04期

10 劉君華;姚明;黃成軍;郭燦新;姚林朋;江秀臣;;采用聲電聯(lián)合法的GIS局部放電定位試驗(yàn)研究[J];高電壓技術(shù);2009年10期

，

本文編號(hào)：1970522