本文選題：微波等離子燈 + 鎖相環(huán)　； 參考：《電子科技大學(xué)》2014年碩士論文

【摘要】：微波等離子體燈(LEP)是二十世紀(jì)出現(xiàn)的一種新型光源,它以其發(fā)光光譜是接近太陽光光譜的連續(xù)譜優(yōu)勢使得它成為二十一世紀(jì)光源領(lǐng)域主要研究方向之一。本文主要的工作內(nèi)容是微波等離子體燈射頻源部分設(shè)計,射頻源輸出一個420MHz-470MHz的掃頻信號,輸出功率達(dá)31dBm,功率平坦度小于?0.6dB。整個射頻源作為末級放大器的輸入,推動末級放大器使其輸出達(dá)到200W,射頻源的設(shè)計主要包括射頻信號發(fā)生器的設(shè)計和兩級放大器的設(shè)計。射頻信號發(fā)生器部分采用ADI公司的鎖相環(huán)芯片ADF4350來搭建,通過對其內(nèi)部鎖存器進(jìn)行合理的配置可以輸出一個420MHz-470MHz掃頻信號。將芯片的兩路輸出通過巴倫結(jié)構(gòu)合并起來,我們可以使輸出功率達(dá)到3.5dBm左右。射頻放大器部分采用兩級放大器級聯(lián)起來的方案,芯片分別用飛思卡爾公司的MMG3009T1和MMG3006NT1集成芯片,在小信號S參數(shù)理論的基礎(chǔ)上實現(xiàn)的輸入和輸出的匹配,使兩級放大器在工作頻帶范圍內(nèi)增益大28dB,增益平坦度小于?1dB。通過PCB制版、調(diào)試最終得到了滿足設(shè)計要求的射頻源,該射頻源達(dá)到了微波等離子燈系統(tǒng)中射頻源的基本要求。隨著微波等離子體燈進(jìn)一步研究,高穩(wěn)定度,高效率、高線性度、高速頻率切換的射頻源的需求日益明顯。
[Abstract]:Microwave plasma lamp (LEP) is a new type of light source in the 20th century. It is one of the main research directions in the field of light source in the 21 ~ (th) century because of the advantage of its luminescence spectrum which is close to the continuous spectrum of solar light spectrum. The main work of this paper is to design the RF source of microwave plasma lamp. The RF source outputs a 420MHz-470MHz sweep signal, the output power is 31 dBmand the power flatness is less than 0. 6 dB. The whole RF source is used as the input of the final amplifier to push the output of the final amplifier to 200W. The design of the RF source mainly includes the design of the RF signal generator and the design of the two-stage amplifier. In the part of RF signal generator, the ADF4350 chip of ADI company is used to build the generator, and a 420MHz-470MHz sweep signal can be outputted by the reasonable configuration of the internal latch. By combining the two outputs of the chip with the Barron structure, we can make the output power up to about 3.5dBm. In the part of RF amplifier, the two-stage amplifier is cascaded, the chip is integrated with Freescale's MMG3009T1 and MMG3006NT1 chip, and the input and output matching is realized on the basis of small signal S parameter theory. The gain of the two-stage amplifier is 28 dB and the gain flatness is less than 1 dB in the working band. Through PCB plate-making, the RF source that meets the design requirements is finally obtained by debugging. The RF source meets the basic requirements of the RF source in the microwave plasma lamp system. With the further research of microwave plasma lamp, the demand of RF source with high stability, high efficiency, high linearity and high speed frequency switching is becoming more and more obvious.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TM923.3

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 付家喜;吳秀龍;陳偉;;一種三態(tài)鑒頻鑒相器的設(shè)計[J];電子技術(shù);2008年12期

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本文編號：1967033