本文選題：多晶硅太陽電池 + 鋁背場��； 參考：《北京交通大學(xué)》2014年碩士論文

【摘要】：晶體硅太陽能電池在目前太陽能電池中占據(jù)最大的市場份額。鋁背場鈍化在硅基太陽能電池效率提高方面起到了巨大的作用。其制備方法主要有絲網(wǎng)印刷、熱蒸發(fā)、磁控濺射等方法。因為成熟的工藝技術(shù)以及低廉的價格,絲網(wǎng)印刷工藝已經(jīng)在工業(yè)化生產(chǎn)中得到了大規(guī)模的應(yīng)用。但是由于大顆粒的鋁漿并不能與硅片形成完美的歐美接觸,因此利用熱蒸發(fā)等PVD方法制備所得鋁薄膜具有更優(yōu)異的特性,能進(jìn)一步提高晶體硅太陽電池的短路電流和轉(zhuǎn)換效率。采用熱蒸發(fā)真空鍍膜技術(shù)結(jié)合絲網(wǎng)印刷工藝的方式制備得鋁背場,具有良好歐姆接觸和更高的短路電流。其制備方法簡單、兼顧兩種工藝的優(yōu)點成本、鈍化性能良好。 基于以上介紹,本文主要做了以下工作： 自主搭建了可用于大面積(156×156mm2)多晶硅片鋁背場制備的熱蒸發(fā)真空鍍膜設(shè)備。加熱電流范圍0—50A,極限真空度達(dá)到了5.0×10-4pa,一次鋁膜沉積厚度達(dá)到2μ m以上,沉積鋁膜不均勻度14.10%,基本上滿足了多晶硅太陽電池鋁背場的制備。對蒸發(fā)鋁薄膜工藝進(jìn)行了研究,研究表明鋁膜沉積模式為島式模式,且隨著阻蒸電流增大,蒸發(fā)顆粒變大,膜層表面變粗糙,在絨面硅片表面呈魚鱗狀沉積。 利用熱蒸發(fā)鍍膜機(jī),于電池背面沉積0.21～2.11μm鋁膜,研究了鋁膜厚度對電池性能的影響。研究表明鋁膜厚度對電池性能有較大影響,鋁量的多少直接關(guān)系到電池電學(xué)性能。隨著鋁膜增厚,轉(zhuǎn)換效率升高,在膜厚為2.11μm時達(dá)到最高15.90%。從0.21μ m到2.11μ m,開路電壓由0.602V增加到0.611V、短路電流由33.33mA/cm2增加到33.67]mA/cm2、填充因子由70.28%增加到77.64%,串聯(lián)電由阻5.729mΩ減小到0.025mΩ,并聯(lián)電阻由最小2.94Ω增加到17.08Ω。鋁膜的厚度對電池的各電學(xué)參數(shù)影響至關(guān)重要。 利用熱蒸發(fā)鍍膜機(jī)結(jié)合絲網(wǎng)印刷工藝制備了多晶硅太陽電池,對鋁背場金屬化進(jìn)行了研究,研究發(fā)現(xiàn),用熱蒸發(fā)鍍膜制備的鋁背場具有更好的歐姆接觸更低的串聯(lián)電阻和更高的短路電流,相比只進(jìn)行絲印的電池其短路電流最高提高了0.21mA/cm2。通過比較熱蒸發(fā)與絲網(wǎng)印刷不同工藝制備的電池,以及對電池進(jìn)行電學(xué)和SEM測試,表明薄的蒸鍍的鋁膜可以形成很好的歐姆接觸,更低的串聯(lián)電阻,但是其較薄的鋁層并不能形成很好的鈍化層。絲網(wǎng)印刷可以快速制得較厚的鋁膜層,但是制備的硅鋁合金層疏松空隙較多,不能形成很好的歐姆接觸。而蒸鍍加絲網(wǎng)印刷的工藝可以兼顧蒸鍍和絲網(wǎng)印刷的優(yōu)勢,得到很好的硅鋁合金層和p+層,合金層致密無孔,得到更高的開路電壓和短路電流。
[Abstract]:Crystal silicon solar cells in the current solar cells account for the largest market share. Aluminum backfield passivation plays an important role in improving the efficiency of silicon based solar cells. The main preparation methods include screen printing, thermal evaporation, magnetron sputtering and so on. Due to mature technology and low price, screen printing technology has been applied in industrial production on a large scale. However, because the aluminum slurry with large particles can not form perfect contact with silicon wafer in Europe and America, the aluminum thin films prepared by PVD method such as thermal evaporation have better properties, and can further improve the short-circuit current and conversion efficiency of crystalline silicon solar cells. The back field of aluminum was prepared by thermal evaporation vacuum coating technology combined with screen printing technology. It has good ohmic contact and higher short circuit current. Its preparation method is simple, the advantages and cost of both processes are taken into account, and the passivation performance is good. Based on the above introduction, the main work of this paper is as follows: A vacuum coating equipment with thermal evaporation was built, which can be used in large area (156 脳 156mm ~ 2) polysilicon wafer. The heating current range is 0-50 A, the limit vacuum is 5.0 脳 10 ~ (-4) paa, the thickness of primary aluminum film is more than 2 渭 m, the uniformity of deposited aluminum film is 14.10 ~ (th), which basically satisfies the preparation of aluminum back field of polycrystalline silicon solar cell. The process of evaporating aluminum film is studied. The results show that the deposition mode of aluminum film is island mode, and with the increase of evaporation current, the evaporation particle becomes larger, the surface of the film becomes rough, and the surface of the film is deposited as a fish scale on the surface of the flannel silicon wafer. The effect of the thickness of aluminum film on the performance of the battery was studied by means of the thermal evaporative coating machine and 0.21 渭 m 2.11 渭 m aluminum film deposited on the back of the battery. The results show that the thickness of aluminum film has a great influence on the performance of the battery, and the amount of aluminum directly affects the electrical properties of the battery. With the increase of aluminum film thickness, the conversion efficiency increases, and the highest value is 15.90 when the film thickness is 2.11 渭 m. From 0.21 渭 m to 2.11 渭 m, the open-circuit voltage increased from 0.602V to 0.611V, the short-circuit current increased from 33.33mA/cm2 to 33.67 Ma / cm ~ (2), the filling factor increased from 70.28% to 77.64m, the series resistance decreased from 5.729m 惟 to 0.025m 惟, and the shunt resistance increased from 2.94 惟 to 17.08 惟. The thickness of aluminum film plays an important role in the electrical parameters of the battery. Polysilicon solar cells were prepared by thermal evaporation coating machine and screen printing process. The metallization of aluminum back field was studied. The lower ohmic contact resistance and the higher short-circuit current are obtained in the aluminum back field prepared by thermal evaporation coating. Compared with the battery with only screen printing, the short-circuit current is increased by 0.21 Ma / cm ~ (2) up to 0.21 Ma / cm ~ (2). By comparing the batteries prepared by different processes of thermal evaporation and screen printing, as well as the electrical and SEM tests of the batteries, it is shown that thin evaporated aluminum films can form good ohmic contact and lower series resistance. But the thin aluminum layer does not form a good passivation layer. Silk-screen printing can make thick aluminum film quickly, but the silicon aluminum alloy layer can't form good ohmic contact due to the large porosity. However, the process of evaporation plus screen printing can give consideration to the advantages of evaporation and screen printing, and obtain good Si-Al alloy layer and p layer. The alloy layer is compact and porous, and higher open circuit voltage and short circuit current can be obtained.
【學(xué)位授予單位】：北京交通大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TM914.41

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本文編號：1901369