本文選題：AZO薄膜 + 射頻磁控濺射　； 參考：《北京交通大學》2014年碩士論文

【摘要】：透明導電氧化物薄膜是薄膜太陽電池中的一個重要結(jié)構(gòu),因具有良好的光電性能而被廣泛地應用在薄膜太陽電池的前電極和背電極。高質(zhì)量的透明導電氧化物薄膜是進一步提高太陽電池效率的關(guān)鍵所在。 AZO(摻鋁氧化鋅)是近些年來研究較多的新型透明導電材料,具有成本低廉、資源豐富、無污染的優(yōu)勢,并且具有優(yōu)良的光電特性,因此廣泛應用在薄膜太陽電池中,被認為是最具發(fā)展?jié)摿Φ牟牧现弧?本文采用射頻磁控濺射法在玻璃襯底上制備了AZO透明導電膜,研究了氬氣壓強、氬氣流量、襯底與靶材之間的距離對AZO透明導電膜光電性能的影響,優(yōu)化了制備AZO薄膜的工藝參數(shù)。為了進一步降低薄膜的電阻率,我們采取了在氬氣氛圍中通入H2的方法對AZO薄膜進行氫化處理。氫化處理后的AZO薄膜在厚度為230nm的情況下,薄膜的方塊電阻為40.8Ω/(?),是相同條件下未氫化薄膜方塊電阻的1/6,可見光的平均透過率在87%以上。結(jié)果表明,對AZO薄膜的氫化處理能夠有效地提高薄膜的電學性能。 將優(yōu)化后的AZO透明導電膜應用在非晶硅鍺太陽電池的背反射電極,結(jié)果表明在500-900nm波段,太陽電池的QE曲線顯著增加,電流密度由原來的12.1mA/cm2增加到了14.9mA/cm2,電池效率提高了1%。 此外,在石英片和硅片上制備了石墨烯薄膜,制備的薄膜分布均勻,生長較好。然后采用相同的方法在AZO薄膜表面生長了石墨烯薄膜,經(jīng)原子力顯微鏡表征發(fā)現(xiàn),生長了石墨烯的AZO薄膜表面變得粗糙。對其光電性能進行測試,發(fā)現(xiàn)方塊電阻變大,其平均透過率與AZO薄膜相比相差不大。 最后,在柔性襯底聚酰亞胺上,通過射頻磁控濺射的方法生長了AZO透明導電膜。結(jié)果發(fā)現(xiàn),該薄膜在厚度為610nm時,方塊電阻僅為16.7Ω/(?)。在聚酰亞胺襯底上生長的AZO薄膜的平均透過率在89%以上。
[Abstract]:Transparent conductive oxide film is an important structure in thin film solar cells. Because of its good photoelectric properties, it is widely used in the front and back electrodes of the thin film solar cells. The high quality transparent conductive oxide film is the key to further improve the efficiency of the solar cell.
AZO (aluminum doped Zinc Oxide) is a new type of transparent conductive material which has been widely studied in recent years. It has the advantages of low cost, rich resources and no pollution, and has excellent photoelectric characteristics. Therefore, it is widely used in thin film solar cells and is considered to be one of the most promising materials.
The AZO transparent conductive film was prepared on the glass substrate by RF magnetron sputtering. The effect of argon gas pressure, argon flow rate, the distance between the substrate and target on the photoelectric properties of the AZO transparent conductive film was studied. The technological parameters of the preparation of the AZO film were optimized. In order to further reduce the resistivity of the film, we adopted the argon atmosphere. The AZO film is hydrogenated by H2, and the AZO film after hydrogenation is 40.8 OMEGA / (?) under the thickness of 230nm. It is the 1/6 of the resistance of the non hydrogenated film under the same condition, and the average transmittance of the visible light is above 87%. The results show that the hydrogenated treatment of the AZO film can effectively improve the thinning of the thin film. The electrical properties of the membrane.
The optimized AZO transparent conductive film was applied to the back reflection electrode of the amorphous silicon germanium solar cell. The results showed that the QE curve of the solar cell increased significantly in the 500-900nm band, the current density increased from the original 12.1mA/cm2 to the 14.9mA/cm2, and the cell efficiency increased by 1%..
In addition, graphene thin films are prepared on quartz and silicon wafers. The thin films are evenly distributed and grow better. Then the graphene film is grown on the surface of AZO film by the same method. The surface of the AZO thin film has become rough by atomic force microscopy. The photoelectric properties of the graphene film are tested and the block resistance is detected. The average transmittance increases with the AZO film.
Finally, the AZO transparent conductive film was grown on the flexible substrate Polyimide by RF magnetron sputtering. The results showed that the resistance of the film was only 16.7 OMEGA / (?) when the thickness was 610nm. The average transmittance of the AZO film on the polyimide substrate was 89%.

【學位授予單位】：北京交通大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TM914.42

【共引文獻】

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2 王穎;絨面AZO透明導電薄膜的制備及其特性研究[D];大連交通大學;2012年

3 金成剛;射頻等離子體放電及材料處理研究[D];蘇州大學;2014年

4 王薇;PET基柔性太陽能電池薄膜電極的制備及其光電轉(zhuǎn)換性能的研究[D];山東大學;2014年

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2 呂玉婷;ZnO:Al薄膜的濕化學法制備與取向生長研究[D];浙江大學;2014年

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本文編號：1892693