本文選題：AZO薄膜 + 射頻磁控濺射��； 參考：《北京交通大學(xué)》2014年碩士論文

【摘要】：透明導(dǎo)電氧化物薄膜是薄膜太陽(yáng)電池中的一個(gè)重要結(jié)構(gòu),因具有良好的光電性能而被廣泛地應(yīng)用在薄膜太陽(yáng)電池的前電極和背電極。高質(zhì)量的透明導(dǎo)電氧化物薄膜是進(jìn)一步提高太陽(yáng)電池效率的關(guān)鍵所在。 AZO(摻鋁氧化鋅)是近些年來研究較多的新型透明導(dǎo)電材料,具有成本低廉、資源豐富、無(wú)污染的優(yōu)勢(shì),并且具有優(yōu)良的光電特性,因此廣泛應(yīng)用在薄膜太陽(yáng)電池中,被認(rèn)為是最具發(fā)展?jié)摿Φ牟牧现弧?本文采用射頻磁控濺射法在玻璃襯底上制備了AZO透明導(dǎo)電膜,研究了氬氣壓強(qiáng)、氬氣流量、襯底與靶材之間的距離對(duì)AZO透明導(dǎo)電膜光電性能的影響,優(yōu)化了制備AZO薄膜的工藝參數(shù)。為了進(jìn)一步降低薄膜的電阻率,我們采取了在氬氣氛圍中通入H2的方法對(duì)AZO薄膜進(jìn)行氫化處理。氫化處理后的AZO薄膜在厚度為230nm的情況下,薄膜的方塊電阻為40.8Ω/(?),是相同條件下未氫化薄膜方塊電阻的1/6,可見光的平均透過率在87%以上。結(jié)果表明,對(duì)AZO薄膜的氫化處理能夠有效地提高薄膜的電學(xué)性能。 將優(yōu)化后的AZO透明導(dǎo)電膜應(yīng)用在非晶硅鍺太陽(yáng)電池的背反射電極,結(jié)果表明在500-900nm波段,太陽(yáng)電池的QE曲線顯著增加,電流密度由原來的12.1mA/cm2增加到了14.9mA/cm2,電池效率提高了1%。 此外,在石英片和硅片上制備了石墨烯薄膜,制備的薄膜分布均勻,生長(zhǎng)較好。然后采用相同的方法在AZO薄膜表面生長(zhǎng)了石墨烯薄膜,經(jīng)原子力顯微鏡表征發(fā)現(xiàn),生長(zhǎng)了石墨烯的AZO薄膜表面變得粗糙。對(duì)其光電性能進(jìn)行測(cè)試,發(fā)現(xiàn)方塊電阻變大,其平均透過率與AZO薄膜相比相差不大。 最后,在柔性襯底聚酰亞胺上,通過射頻磁控濺射的方法生長(zhǎng)了AZO透明導(dǎo)電膜。結(jié)果發(fā)現(xiàn),該薄膜在厚度為610nm時(shí),方塊電阻僅為16.7Ω/(?)。在聚酰亞胺襯底上生長(zhǎng)的AZO薄膜的平均透過率在89%以上。
[Abstract]:Transparent conductive oxide film is an important structure in thin film solar cells. Because of its good photoelectric properties, it is widely used in the front and back electrodes of the thin film solar cells. The high quality transparent conductive oxide film is the key to further improve the efficiency of the solar cell.
AZO (aluminum doped Zinc Oxide) is a new type of transparent conductive material which has been widely studied in recent years. It has the advantages of low cost, rich resources and no pollution, and has excellent photoelectric characteristics. Therefore, it is widely used in thin film solar cells and is considered to be one of the most promising materials.
The AZO transparent conductive film was prepared on the glass substrate by RF magnetron sputtering. The effect of argon gas pressure, argon flow rate, the distance between the substrate and target on the photoelectric properties of the AZO transparent conductive film was studied. The technological parameters of the preparation of the AZO film were optimized. In order to further reduce the resistivity of the film, we adopted the argon atmosphere. The AZO film is hydrogenated by H2, and the AZO film after hydrogenation is 40.8 OMEGA / (?) under the thickness of 230nm. It is the 1/6 of the resistance of the non hydrogenated film under the same condition, and the average transmittance of the visible light is above 87%. The results show that the hydrogenated treatment of the AZO film can effectively improve the thinning of the thin film. The electrical properties of the membrane.
The optimized AZO transparent conductive film was applied to the back reflection electrode of the amorphous silicon germanium solar cell. The results showed that the QE curve of the solar cell increased significantly in the 500-900nm band, the current density increased from the original 12.1mA/cm2 to the 14.9mA/cm2, and the cell efficiency increased by 1%..
In addition, graphene thin films are prepared on quartz and silicon wafers. The thin films are evenly distributed and grow better. Then the graphene film is grown on the surface of AZO film by the same method. The surface of the AZO thin film has become rough by atomic force microscopy. The photoelectric properties of the graphene film are tested and the block resistance is detected. The average transmittance increases with the AZO film.
Finally, the AZO transparent conductive film was grown on the flexible substrate Polyimide by RF magnetron sputtering. The results showed that the resistance of the film was only 16.7 OMEGA / (?) when the thickness was 610nm. The average transmittance of the AZO film on the polyimide substrate was 89%.

【學(xué)位授予單位】：北京交通大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM914.42

【共引文獻(xiàn)】

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2 周鑫;楊健茂;辛萌;陳夢(mèng)妮;王興;劉建允;;靜電紡ZnO/碳復(fù)合納米纖維修飾電極制備及對(duì)痕量鉛的測(cè)定[J];分析化學(xué);2014年07期

3 彭英才;陳乙豪;蔣冰;沈波;馬蕾;;表面陷光技術(shù)及其在太陽(yáng)電池中的應(yīng)用[J];河北大學(xué)學(xué)報(bào)(自然科學(xué)版);2014年01期

4 石海英;鄭威;田均慶;;溶膠水熱法制備FTO納米晶體薄膜及其電學(xué)性能研究[J];人工晶體學(xué)報(bào);2014年10期

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1 孟靈靈;滌綸基布表面磁控濺射納米銅膜及性能研究[D];江南大學(xué);2013年

2 王穎;絨面AZO透明導(dǎo)電薄膜的制備及其特性研究[D];大連交通大學(xué);2012年

3 金成剛;射頻等離子體放電及材料處理研究[D];蘇州大學(xué);2014年

4 王薇;PET基柔性太陽(yáng)能電池薄膜電極的制備及其光電轉(zhuǎn)換性能的研究[D];山東大學(xué);2014年

相關(guān)碩士學(xué)位論文 前2條

1 韓利偉;非晶硅襯底制備摻鋁氧化鋅透明導(dǎo)電膜及性能研究[D];哈爾濱工業(yè)大學(xué);2013年

2 呂玉婷;ZnO:Al薄膜的濕化學(xué)法制備與取向生長(zhǎng)研究[D];浙江大學(xué);2014年

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本文編號(hào)：1892693