發(fā)布時間：2018-04-30 05:27

  本文選題：光學電壓互感器 + 偏光干涉�。� 參考：《福州大學》2014年碩士論文

【摘要】：隨著電力系統(tǒng)向高電壓等級和大容量的不斷發(fā)展,傳統(tǒng)電壓互感器因自身傳感機理的缺陷,逐漸暴露出體積大、絕緣難度大、線性范圍小、無數(shù)字接口等問題,無法適應電力系統(tǒng)智能化發(fā)展的要求�，F(xiàn)有光學電壓互感器(Optical Voltage Transducer,簡稱OVT)雖然能夠克服上述缺陷,但仍存在許多問題沒有得到解決,如測量范圍小、受應力線雙折射和溫漂的影響嚴重等。近年來,雙光路法、雙晶體法等消除應力線雙折射并進行溫度補償?shù)难芯康玫綇V泛關注,但這些方法都未能從根源上解決問題。對于采用電光晶體Pockels效應的OVT,上述問題的癥結在于偏光干涉測量模式的局限性。由于無法實現(xiàn)對晶體電光相位延遲的直接測量,通常采用偏光干涉測量模式,將相位延遲轉(zhuǎn)變?yōu)楣鈴娬{(diào)制,通過對光強的檢測實現(xiàn)電壓測量。這種測量模式反映光功率的大小,僅能近似線性地測量有限的電光相位延遲,其穩(wěn)定性與可靠性受到溫漂、晶體附加相位延遲、半波電壓等問題的限制,無法滿足電力系統(tǒng)的實用要求。因此,迫切需要設計一種能夠?qū)w電光相位延遲進行直接、線性測量的新型OVT,以解決半波電壓限制、溫漂等問題。本文分析了OVT偏光干涉光強調(diào)制測量模式的局限性,結合會聚偏光干涉原理設計了一種能夠?qū)w電光相位延遲進行直接、線性測量的新型OVT。該OVT將晶體電光相位變化轉(zhuǎn)換為光斑圖像的旋轉(zhuǎn)角,通過測量光斑旋轉(zhuǎn)角獲得相位延遲。新型OVT測量模式與光強無關,可測量相位延遲為0-180。,電壓測量范圍不受晶體半波電壓限制。文章在理論上分析推導了會聚偏光干涉圖旋轉(zhuǎn)角與晶體電光相位延遲角的線性關系,給出了光斑圖像旋轉(zhuǎn)角的讀取方法,并通過實驗驗證了新型傳感器能夠測量的相位延遲角達到320°,線性度良好。此外,本文針對110kV電網(wǎng),結合Ansoft Maxwell仿真進行新型OVT的結構設計,為樣機的研制提供了參考依據(jù)。文章還分析了晶體形狀以及外電場對電壓測量的影響,并就橫向調(diào)制模式提出在電光晶體上附加介質(zhì)以改善晶體內(nèi)電場分布的方法。通過對110kV電壓等級OVT的仿真,證明了該方法能夠改善電光晶體電場分布,減小光路偏移和干擾電場引起的測量誤差,提高電壓測量準確度和穩(wěn)定性。
[Abstract]:With the continuous development of power system to high voltage level and large capacity, the traditional voltage transformer, because of its own sensing mechanism defects, gradually exposed the problems such as large volume, large insulation difficulty, small linear range, no digital interface and so on. Unable to meet the requirement of intelligent development of power system. Although the existing optical Voltage transducers can overcome the above defects, there are still many unsolved problems, such as the small measurement range, the serious influence of stress line birefringence and temperature drift, and so on. In recent years, the research of double optical path method and double crystal method to eliminate stress line birefringence and carry on temperature compensation has been paid much attention to, but these methods can not solve the problem from the root. For the Pockels effect of electro-optic crystal, the crux of the above problem lies in the limitation of the polarizing interferometry mode. Because it is impossible to measure the phase delay of crystal directly, the polarizing interferometry mode is usually used to change the phase delay into light intensity modulation, and the voltage measurement is realized by measuring the light intensity. This kind of measurement mode reflects the magnitude of optical power and can only measure the limited electro-optic phase delay approximately linearly. Its stability and reliability are limited by temperature drift, crystal additional phase delay, half-wave voltage and so on. Can not meet the practical requirements of the power system. Therefore, it is urgent to design a novel OVT that can directly and linearly measure the electro-optic phase delay in order to solve the problems of half-wave voltage limitation and temperature drift. In this paper, the limitation of OVT polarizing interference light intensity modulation measurement mode is analyzed, and a new type of OVT is designed which can directly and linearly measure the electro-optic phase delay of crystal based on the principle of convergent polarizing light interference. The OVT converts the phase change of the crystal into the rotation angle of the spot image, and obtains the phase delay by measuring the rotation angle of the spot. The new OVT measurement mode is independent of the light intensity, and the phase delay is 0-180.The voltage measurement range is not limited by the half-wave voltage of the crystal. In this paper, the linear relationship between the rotation angle of the convergent polarizing interferogram and the delay angle of the electro-optic phase of the crystal is derived, and the reading method of the rotation angle of the spot image is given. The experimental results show that the phase delay angle measured by the new sensor is 320 擄and the linearity is good. In addition, the structure design of a new type of OVT based on Ansoft Maxwell simulation is carried out for 110kV power network, which provides a reference for the development of the prototype. The influence of crystal shape and external electric field on the voltage measurement is also analyzed, and a method for improving the distribution of electric field in the crystal by adding medium to the electro-optic crystal is put forward for the transverse modulation mode. Through the simulation of 110kV voltage grade OVT, it is proved that this method can improve the electric field distribution of electro-optic crystal, reduce the measurement error caused by optical path deviation and interference electric field, and improve the accuracy and stability of voltage measurement.
【學位授予單位】：福州大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TM45

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