憶阻器電學(xué)特性的模擬及在混沌系統(tǒng)中的應(yīng)用研究
本文關(guān)鍵詞: 憶阻器 模擬器 混沌 狀態(tài)控制細(xì)胞神經(jīng)網(wǎng)絡(luò) 同步 出處:《湘潭大學(xué)》2014年博士論文 論文類型:學(xué)位論文
【摘要】:作為與電阻R,電感L和電容C并列的第四個(gè)基本電子元件,憶阻器建立了磁通量和電荷之間的關(guān)系,其阻值取決于流過電流的歷史,因而憶阻器具有記憶功能。自惠普實(shí)驗(yàn)室物理成功實(shí)現(xiàn)憶阻器以來,其在非易失性存儲(chǔ)器,計(jì)算機(jī),人工神經(jīng)網(wǎng)絡(luò)和電路設(shè)計(jì)等領(lǐng)域的潛在應(yīng)用價(jià)值引起了國內(nèi)外學(xué)者的廣泛關(guān)注。 由于納米技術(shù)存在實(shí)現(xiàn)困難、成本高等缺點(diǎn),憶阻器現(xiàn)在還僅存在實(shí)驗(yàn)室環(huán)境中。憶阻器在短時(shí)間內(nèi)不可能商品化,成為人們研究憶阻器及其應(yīng)用的瓶頸,因而根據(jù)實(shí)際憶阻器的電學(xué)特性構(gòu)建它的等效電路對(duì)分析和研究憶阻器構(gòu)成的電路和系統(tǒng)具有重要意義和實(shí)用價(jià)值。此外,作為一種納米尺寸的非線性動(dòng)態(tài)元件,憶阻器非常適合用來實(shí)現(xiàn)混沌電路以產(chǎn)生高頻的混沌信號(hào)。本文的研究工作主要集中在憶阻器電學(xué)特性的模擬等效和憶阻器在混沌系統(tǒng)中的應(yīng)用,取得的研究成果如下: (1)以惠普憶阻器物理模型為基礎(chǔ),提出了一種電荷控制憶阻器模擬器,經(jīng)Pspice仿真分析,,該模擬器的電學(xué)特性與惠普憶阻器的電學(xué)特性基本吻合,且提出的電路結(jié)構(gòu)簡單,采用的器件均為普通器件,非常適合實(shí)驗(yàn)環(huán)境下分析和研究憶阻器。由于記憶效應(yīng)是納米器件的一種普遍現(xiàn)象,在納米尺寸下電容、電感也具有記憶特性,為了能模擬所有記憶器件的電學(xué)行為,我們實(shí)現(xiàn)了一個(gè)通用的記憶器件模擬器。該模擬器能在電路拓?fù)浣Y(jié)構(gòu)保持不變的情況下,能將接地的憶阻器轉(zhuǎn)化為浮地憶阻器、浮地憶容器和浮地憶感器,具有良好的通用性。 (2)提出了一種憶阻器混沌電路的系統(tǒng)設(shè)計(jì)方法,認(rèn)為憶阻器混沌電路可以由正弦波振蕩網(wǎng)絡(luò)、RC移相網(wǎng)絡(luò)和憶阻器三部分構(gòu)成,當(dāng)選擇不同的正弦波振蕩器就可以得到不同的憶阻混沌電路,以二階RC橋式振蕩器和三階雙T帶阻振蕩器為例驗(yàn)證了該設(shè)計(jì)方法的有效性。 (3)由于現(xiàn)有的憶阻器混沌電路只能產(chǎn)生混沌信號(hào),不能實(shí)現(xiàn)超混沌行為,本文以分段線性的磁控憶阻器替換MCK電路中的非線性電阻實(shí)現(xiàn)了一個(gè)超混沌電路。采用平衡點(diǎn)穩(wěn)定性分析、李氏指數(shù)譜、分岔圖和相圖等常規(guī)的動(dòng)力學(xué)分析方法研究了系統(tǒng)的動(dòng)力學(xué)行為,并通過Pspice仿真實(shí)驗(yàn)驗(yàn)證了理論的正確性。 (4)此外,采用憶阻器實(shí)現(xiàn)了一個(gè)改進(jìn)型的細(xì)胞神經(jīng)網(wǎng)絡(luò)單元,適當(dāng)連接三個(gè)細(xì)胞單元可以將憶阻器混沌系統(tǒng)模型映射為細(xì)胞神經(jīng)網(wǎng)絡(luò)電路,從而為憶阻器混沌電路的設(shè)計(jì)提供了另外一種可供選擇的方法。為實(shí)驗(yàn)研究電路的動(dòng)力學(xué)行為,我們采用細(xì)胞神經(jīng)單元實(shí)現(xiàn)了一個(gè)新的憶阻器模擬器。實(shí)驗(yàn)結(jié)果與數(shù)值仿真結(jié)果的一致性表明采用細(xì)胞神經(jīng)網(wǎng)絡(luò)能有效地實(shí)現(xiàn)憶阻器混沌電路。 (5)為了研究憶阻器混沌系統(tǒng)的同步問題,以提出的荷控憶阻器混沌系統(tǒng)為研究對(duì)象采用自適用同步方案實(shí)現(xiàn)了系統(tǒng)參數(shù)不確定情況下兩個(gè)相同結(jié)構(gòu)憶阻混沌系統(tǒng)的同步。并在自適應(yīng)同步的基礎(chǔ)上,我們采用參數(shù)調(diào)制技術(shù)構(gòu)建了一個(gè)混沌保密通信系統(tǒng),并通過數(shù)值仿真驗(yàn)證了該系統(tǒng)的可行性。
[Abstract]:As with the resistance R inductance L and capacitance C are the fourth basic electronic components, the memristor can establish the relationship between the magnetic flux and charge, its value depends on the current of history, so the memristor has a memory function. Since the successful implementation of HP laboratory physical memristor to its non easy nonvolatile memory, computer, field of artificial neural network and the circuit design of the potential application value has aroused wide attention of scholars at home and abroad.
Because of nanotechnology there is difficult to implement, high cost of memristor now exists only in the environment of laboratory. The memristor is impossible in a short period of time have become the bottleneck of commercialization, people drag device and its application, and according to the electrical characteristics of the actual circuit and system of the memristor construct its equivalent circuit analysis and study the memristor which has important significance and practical value. In addition, as a nonlinear dynamic element of nanometer size, the chaotic signal is very suitable for the implementation of memristor chaotic circuit to generate high frequency. Mainly used in the simulation of equivalent memristor and electrical characteristics of memristor in chaotic systems research work of this paper, the research achievements are as follows:
(1) to HP memristor model as the foundation, proposed a charge controlled memristor simulator, through Pspice simulation analysis, the electrical characteristics of the electrical characteristics of the simulator and the HP memristor is consistent, and the circuit structure is simple, the devices used are ordinary devices, very suitable for analysis and study the memristor under the experimental environment. Because the memory effect is a common phenomenon in nano devices, nano size capacitance, inductance also has the characteristics of memory, in order to electrical behavior can simulate all memory devices, we implemented a general memory device simulator. The simulator can in circuit topology unchanged the case can be grounded memristor into floating memristor memcapacitor, floating and floating meminductor device has good versatility.
(2) proposed a memristor chaotic circuit system design method, consider memristor based chaotic circuit by sinusoidal oscillator network, RC phase network and the memristor is composed of three parts, when choosing different sine wave oscillator can be memristor chaotic circuit are different, the two order RC bridge oscillator and three double order T bandreject oscillator to validate the design method as an example.
(3) the memristor chaotic circuit can produce chaotic signal, cannot achieve hyperchaotic behavior based on piecewise linear magnetron memristor realized a hyperchaotic circuit nonlinear resistor in MCK circuit. The stability of equilibrium point replacement analysis, Lyapunov exponent spectrum, bifurcation diagram and phase diagram and other routine analysis of the dynamic behavior of the system, and the correctness of the theory is verified by Pspice simulation.
(4) in addition, the memristor implements an improved cellular neural network unit, the appropriate unit connecting three cells can be memristor chaotic system model is mapped to the cellular neural network circuit, thus also an alternative method for the design of memristor based chaotic circuit with dynamic. Experimental study on the behavior of the circuit, we use cellular neural unit to realize a new memristor emulator. The consistency of experimental results and numerical simulation results show that using cellular neural network can effectively realize the memristor based chaotic circuit.
(5) in order to study synchronization of memristor chaotic system, to put forward the memristor chaotic system as the research object using adaptive synchronization scheme to realize the system with uncertain parameters under simultaneous two identical structure of memristor chaotic system. And based on adaptive synchronization, we use parameter modulation technology construction of a chaotic secure communication system, and the feasibility of this system is verified by numerical simulation.
【學(xué)位授予單位】:湘潭大學(xué)
【學(xué)位級(jí)別】:博士
【學(xué)位授予年份】:2014
【分類號(hào)】:TM13
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