本文關(guān)鍵詞：黑硅太陽能電池的工藝研究　出處：《北京交通大學(xué)》2014年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 等離子體侵沒離子注入 黑硅 鈍化

【摘要】：當(dāng)前,為了降低生產(chǎn)成本,硅片薄片化成為晶體硅太陽能電池的發(fā)展趨勢之一。硅片變薄時,對光吸收和鈍化的要求非常嚴(yán)格,特別是在鈍化效果較好時,光吸收就成為了制約電池效率提升的關(guān)鍵因素。因此,需要最大限度地增加硅基體對光線的吸收以提高太陽能電池的轉(zhuǎn)換效率。文中制備的黑硅硅片在300～1100nm光譜范圍內(nèi)對入射光能達到95%的吸收率。 本文利用等離子體侵沒離子注入技術(shù)制備多晶黑硅,其原理為將硅片直接浸沒在等離子體中,然后在硅片上施加負(fù)偏壓,由于在硅片表面形成鞘層,所以硅片表面各處將同時被注入反應(yīng)離子,并與硅片發(fā)生反應(yīng)形成黑硅。本文采用自主搭建的等離子體侵沒離子注入系統(tǒng),研究出了一套制備黑硅硅片的最佳工藝,并初步實現(xiàn)了黑硅硅片的低成本批量制造；之后,將制備好的黑硅硅片做成太陽能電池,其開路電壓、短路電流和填充因子分別為0.625V,8.750A和79.116%,轉(zhuǎn)換效率可達17.79%,比常規(guī)太陽能電池轉(zhuǎn)換效率高0.3%。 由于黑硅硅片的納米結(jié)構(gòu),使得硅片具有大的表面積和大量的表面態(tài),其電子態(tài)和能帶結(jié)構(gòu)也發(fā)生了變化,所以本文還對黑硅表面鈍化工藝進行了一系列研究,希望找到能有效降低黑硅表面活性和提高少數(shù)載流子壽命的方法。實驗采用傳統(tǒng)硅工藝使用的等離子增強化學(xué)氣相沉積(PECVD)技術(shù)生長氮化硅薄膜來對硅片表面進行鈍化,主要研究了氣體比例、沉積溫度和沉積時間對減反作用和鈍化作用的影響；同時還研究了沉積條件對電池內(nèi)、外量子效率的影響。
[Abstract]:At present, in order to reduce the production cost, wafer formation is one of the development trends of crystalline silicon solar cells. When silicon wafers become thinner, the requirements of light absorption and passivation are very strict, especially when the passivation effect is better. Light absorption has become a key factor that restricts the efficiency of the battery. In order to improve the conversion efficiency of solar cells, the absorption of light by silicon substrate should be increased to the maximum extent. In this paper, the absorption of incident light energy of the black silicon wafer can reach 95% in the range of 300 nm 1100nm. Rate. In this paper, polycrystalline black silicon is prepared by plasma immersion ion implantation technique. The principle is to immerse silicon wafer directly in plasma, then apply negative bias on silicon wafer, because of the formation of sheath on the surface of silicon wafer. So the reaction ions will be implanted all over the surface of the silicon wafers and react with the silicon wafers to form black silicon. A set of optimum technology for preparing black silicon wafer has been developed, and the low cost batch manufacture of black silicon wafer has been preliminarily realized. After that, the prepared silicon wafer was made into a solar cell with an open circuit voltage, a short circuit current and a filling factor of 0.625 V, 8.750A and 79.116%, respectively. The conversion efficiency is 17.79, which is 0.3% higher than that of conventional solar cells. Due to the nano-structure of black silicon wafer, the silicon wafer has a large surface area and a large number of surface states, its electronic state and energy band structure have also changed. Therefore, a series of research on the surface passivation process of black silicon is also carried out in this paper. It is hoped that the method of reducing the surface activity of black silicon and increasing the lifetime of minority carriers can be found effectively. Plasma enhanced Chemical Vapor deposition (PECVD) using traditional silicon process was used in the experiment. The silicon nitride thin film is grown to passivate the surface of silicon wafer. The effects of gas ratio, deposition temperature and deposition time on antireaction and passivation are studied. The effect of deposition conditions on the quantum efficiency in and out of the cell is also studied.
【學(xué)位授予單位】：北京交通大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TM914.4

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本文編號：1391366