發(fā)布時間：2018-10-05 18:17

【摘要】：PbS膠體量子點在量子尺寸效應(yīng)下的帶隙可調(diào),低溫液相合成,室溫下旋涂成膜,多激子效應(yīng),PbS膠體量子點太陽能電池在低成本的柔性薄膜光伏研究領(lǐng)域引起了廣泛的關(guān)注。目前,柔性器件以平面異質(zhì)結(jié)構(gòu)為主,在平面異質(zhì)結(jié)結(jié)構(gòu)器件中,吸收層厚度不足限制光生電流的提高,使得器件效率較低。以無機(jī)納米粒子堆積的薄膜為電子傳輸層時,易產(chǎn)生裂痕導(dǎo)致器件性能的損失。解決這些問題是進(jìn)一步發(fā)展柔性器件的重要方向。為了解決上述問題,我們以ZnO納米線陣列為電子傳輸層構(gòu)建了三維異質(zhì)結(jié)結(jié)構(gòu)PbS膠體量子點太陽能電池,三維結(jié)構(gòu)有利于載流子的定向輸運和收集,而且光生載流子的方向與光吸收方向正交,大大地提高了光生電流密度和器件轉(zhuǎn)換效率。在提高器件抗彎折性方面,三維的間隙結(jié)構(gòu)可以有效的釋放彎折應(yīng)力,提高器件的抗彎折性能,對于未來可穿戴柔性太陽能電池的應(yīng)用非常重要。我們通過在室溫下旋涂預(yù)先合成的ZnO納米粒子前驅(qū)液作為晶種層,再通過水熱合成的方法低溫制備三維結(jié)構(gòu)ZnO納米線陣列作為PbS膠體量子點太陽能電池電子傳輸層。我們利用該低溫方法在柔性襯底上生長了形貌和長度可控生長的ZnO納米線陣列,其具有高結(jié)晶質(zhì)量,低缺陷態(tài)密度,高透光性等優(yōu)越性能。我們以ZnO納米粒子和ZnO納米陣列作為電子傳輸層在柔性襯底上構(gòu)建了PbS膠體量子點太陽能電池。研究發(fā)現(xiàn),三維器件具有更高的短路電流,但損失了一部分開路電壓,整體的效率與平面結(jié)構(gòu)器件的效率相當(dāng)。在彎曲性測試中,在160°彎曲角度下,對比兩種柔性器件的抗彎折性能,三維器件各參數(shù)都保持較高的性能,而平面器件的短路電流和填充因子下降明顯,最終三維器件的效率變化高出平面器件的16%。我們對比彎折后器件各部分形貌的變化,發(fā)現(xiàn)彎折后只有平面的ZnO納米粒子薄膜出現(xiàn)明顯的裂痕,這是由于平整薄膜不能有效釋放應(yīng)力,導(dǎo)致器件的短路電流和填充因子下降明顯。ZnO納米線陣列因其間隙結(jié)構(gòu)能有效釋放彎折應(yīng)力,從而使得器件各參數(shù)在彎折后均未出現(xiàn)明顯降低,抗彎折性能得到了明顯的提高,為其應(yīng)用于其他柔性器件提供了參考和方向。
[Abstract]:The tunable band gap of PbS colloidal quantum dots in quantum size effect, low temperature liquid phase synthesis, spin-coating film at room temperature and multi-exciton effect have attracted wide attention in the field of low-cost flexible thin film photovoltaic research. At present, the flexible devices are mainly planar heterostructure. In the planar heterojunction devices, the thickness of absorption layer is insufficient to limit the increase of photogenerated current, which makes the device low efficiency. When the film deposited by inorganic nanoparticles is used as the electron transport layer, it is easy to produce cracks and lead to the loss of device performance. Solving these problems is an important direction for the further development of flexible devices. In order to solve the above problems, we have constructed a three-dimensional heterojunction PbS colloidal quantum dot solar cell with ZnO nanowire array as the electron transport layer. The three-dimensional structure is conducive to the directional transport and collection of carriers. Moreover, the direction of photogenerated carriers is orthogonal to the direction of optical absorption, which greatly improves the photogenerated current density and the conversion efficiency of the devices. In the aspect of improving the bending resistance of the devices, the three-dimensional gap structure can effectively release the bending stress and improve the bending performance of the devices, which is very important for the application of wearable flexible solar cells in the future. Three-dimensional ZnO nanowire arrays were prepared by spin-coating pre-synthesized precursor of ZnO nanoparticles at room temperature as seed layer and hydrothermal synthesis at low temperature as the electron transport layer of PbS colloidal quantum dots solar cells. We have grown ZnO nanowire arrays with controlled morphology and length on flexible substrates by using the low temperature method. The nanowires have excellent properties such as high crystallization quality, low defect density of states, high transmittance and so on. We have constructed PbS colloidal quantum dot solar cells on flexible substrates using ZnO nanoparticles and ZnO nanoarrays as electron transport layers. It is found that the 3D device has a higher short-circuit current, but loses part of the open-circuit voltage, and the overall efficiency is equivalent to that of the planar device. In the bending test, compared with the flexural properties of the two flexible devices at 160 擄bending angle, each parameter of the 3D device keeps higher performance, while the short-circuit current and the filling factor of the planar device decrease obviously. In the end, the efficiency of three-dimensional devices is higher than that of planar devices. By comparing the morphologies of various parts of the device after bending, we find that only the planar ZnO nanoparticles film has obvious cracks after bending, which is due to the fact that the flat film can not release the stress effectively. The short circuit current and filling factor of the device decrease obviously. The gap structure of ZnO nanowire array can effectively release the bending stress, so that the parameters of the device are not obviously reduced after bending, and the bending performance is obviously improved. It provides reference and direction for its application in other flexible devices.
【學(xué)位授予單位】：東北師范大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TM914.4

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