通過界面修飾提高平面異質(zhì)結(jié)鈣鈦礦太陽能電池的性能
發(fā)布時間：2018-10-05 18:11
【摘要】：由于有機-無機雜化鈣鈦礦材料具有優(yōu)良的特性,被作為一種可應(yīng)用于太陽能電池中的理想的光吸收材料。近幾年,鈣鈦礦太陽能電池得到了迅猛的發(fā)展,被認為是最具有大規(guī)模應(yīng)用前景的下一代太陽能電池。平面器件結(jié)構(gòu)由于其結(jié)構(gòu)簡單、可制備柔性器件等特點而備受關(guān)注。但是由于鈣鈦礦層表面以及晶界處存在較多的缺陷,在鈣鈦礦層的界面處更容易產(chǎn)生電荷復(fù)合。另外電子傳輸層與鈣鈦礦層的能級匹配程度,也決定了器件抽取電子及阻擋空穴的能力,從而影響著器件的性能。因此,選取高電子遷移率、高電導(dǎo)率、高穩(wěn)定性的電子傳輸材料,以改善鈣鈦礦層、電子傳輸層及電極的界面性質(zhì)成為了一種簡單而有效的方法。本文制備了倒置平面異質(zhì)結(jié)鈣鈦礦太陽能電池。對器件的電子傳輸層進行了界面修飾,進而改善了器件性能。本論文主要開展了以下研究工作:1.采用聚乙烯基咔唑PVK和2,2'-[[6,6,12,12-四(甲氧基苯基)-6,12-二氫[2,3-d:2',3'-d']-s-茚并[1,2-b:5,6-b']二噻吩-2,8-二基]雙[亞甲基(3-氧代-1H-茚-2,1(3H)-亞基]]雙丙二腈ITIC共摻雜電子傳輸層PCBM,考察其對鈣鈦礦電池的性能影響。添加PVK和ITIC提高了PCBM的成膜性,從而使鈣鈦礦層、電子傳輸層和Al電極之間形成良好的界面接觸,減少了界面缺陷,有效提高了器件電荷分離效率并抑制了電荷復(fù)合。當(dāng)PVK添加濃度為4wt%,ITIC的添加濃度為6wt%時得到最優(yōu)器件。相比于沒有添加劑的器件,光電轉(zhuǎn)換效率(PCE)由5.26%提高到9.93%,其中Voc=0.95V,Jsc=15.97 mA/cm2,FF=65.42%。另外,PVK與ITIC的加入抑制了空氣中的水分與氧氣對器件的侵蝕,從而提高了器件的穩(wěn)定性。2.采用N,N'-二正辛烷基-3,4,9,10-傒四甲酰二亞胺(PTCDI-C8)對電子傳輸層PCBM進行界面修飾。由于PTCDI-C8具有較高的電子遷移率,在PCBM表面能夠形成更平整的薄膜。因此減少了PCBM與Al電極之間的漏電流,從而提高了陰極的電子收集效率。另外,由于PTCDI-C8具有低的HOMO能級,能夠阻擋空穴向電極的反向傳輸,從而減少界面處的電荷復(fù)合。當(dāng)薄膜的厚度為20 nm時得到最優(yōu)器件,與沒有PTCDI-C8層的器件相比,PCE由5.26%提高到了8.65%。其中Voc=0.92 V,Jsc=15.68mA/cm2,FF=60%。另外,由于PTCDI-C8具有較高的穩(wěn)定性,阻礙了空氣對PCBM的侵蝕,從而提高了器件的穩(wěn)定性。
[Abstract]:Due to the excellent properties of organic-inorganic hybrid perovskite materials, they can be used as an ideal photoabsorption material for solar cells. In recent years, perovskite solar cells have been rapidly developed and are considered to be the next generation solar cells with the most large application prospects. The planar device structure has attracted much attention because of its simple structure and the ability to fabricate flexible devices. However, there are many defects on the perovskite layer surface and grain boundary, so it is easier to produce charge recombination at the interface of the perovskite layer. In addition, the energy level matching between the electron transport layer and the perovskite layer also determines the ability of the device to extract electrons and block holes, thus affecting the performance of the device. Therefore, it is a simple and effective method to select electron transport materials with high electron mobility, high conductivity and high stability to improve the interfacial properties of perovskite layer, electron transport layer and electrode. In this paper, inverted plane heterojunction perovskite solar cells are fabricated. The interfacial modification of the electron transport layer is carried out to improve the performance of the device. This paper mainly carried out the following research work: 1. Polyethylcarbazole (PVK) and [6 (6) 6 (12) -tetra (methoxy phenyl) -612] -612 [2] 3: 2 (2) (2) (2) -dithiophene -28-diyl] bis [methylene (3-oxo) -1H -indene 1 (3H) -subgroup] bismalonitrile ITIC co-doped electron transport layer PCBM, was used to investigate its effect on the performance of perovskite cells. The addition of PVK and ITIC can improve the film-forming property of PCBM, thus forming a good interface contact between perovskite layer, electron transport layer and Al electrode, reducing the interface defects, effectively improving the charge separation efficiency of the device and restraining the charge recombination. The optimal device is obtained when the concentration of PVK is 4wtwt% and the concentration of ITIC is 6wt%. Compared with the devices without additives, the photoelectric conversion efficiency (PCE) was increased from 5.26% to 9.93%, in which Voc=0.95V,Jsc=15.97 mA/cm2,FF=65.42%. was used. In addition, the addition of PVK and ITIC can inhibit the erosion of air moisture and oxygen to the device, thus improving the stability of the device. The interfacial modification of electron transport layer (PCBM) was carried out by using N- (-)-dioctyl-3-octanoalkyl-3 (4)-octyl-4-(10 -)-tetracarboimide (PTCDI-C8) as an interface modifier. Due to the high electron mobility of PTCDI-C8, a more flat film can be formed on the surface of PCBM. Therefore, the leakage current between PCBM and Al electrode is reduced, and the electron collection efficiency of cathode is improved. In addition, because PTCDI-C8 has a low HOMO energy level, it can block the reverse transport of the hole to the electrode, thus reducing the charge recombination at the interface. When the thickness of the film is 20 nm, the optimal device is obtained. Compared with the device without PTCDI-C8 layer, the PCE is increased from 5.26% to 8.65%. Among them, Voc=0.92 VCU 15.68 Ma / cm ~ 2 FFF ~ (60). In addition, the high stability of PTCDI-C8 hinders the erosion of PCBM by air, thus improving the stability of the device.
【學(xué)位授予單位】：天津理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TM914.4
[Abstract]:Due to the excellent properties of organic-inorganic hybrid perovskite materials, they can be used as an ideal photoabsorption material for solar cells. In recent years, perovskite solar cells have been rapidly developed and are considered to be the next generation solar cells with the most large application prospects. The planar device structure has attracted much attention because of its simple structure and the ability to fabricate flexible devices. However, there are many defects on the perovskite layer surface and grain boundary, so it is easier to produce charge recombination at the interface of the perovskite layer. In addition, the energy level matching between the electron transport layer and the perovskite layer also determines the ability of the device to extract electrons and block holes, thus affecting the performance of the device. Therefore, it is a simple and effective method to select electron transport materials with high electron mobility, high conductivity and high stability to improve the interfacial properties of perovskite layer, electron transport layer and electrode. In this paper, inverted plane heterojunction perovskite solar cells are fabricated. The interfacial modification of the electron transport layer is carried out to improve the performance of the device. This paper mainly carried out the following research work: 1. Polyethylcarbazole (PVK) and [6 (6) 6 (12) -tetra (methoxy phenyl) -612] -612 [2] 3: 2 (2) (2) (2) -dithiophene -28-diyl] bis [methylene (3-oxo) -1H -indene 1 (3H) -subgroup] bismalonitrile ITIC co-doped electron transport layer PCBM, was used to investigate its effect on the performance of perovskite cells. The addition of PVK and ITIC can improve the film-forming property of PCBM, thus forming a good interface contact between perovskite layer, electron transport layer and Al electrode, reducing the interface defects, effectively improving the charge separation efficiency of the device and restraining the charge recombination. The optimal device is obtained when the concentration of PVK is 4wtwt% and the concentration of ITIC is 6wt%. Compared with the devices without additives, the photoelectric conversion efficiency (PCE) was increased from 5.26% to 9.93%, in which Voc=0.95V,Jsc=15.97 mA/cm2,FF=65.42%. was used. In addition, the addition of PVK and ITIC can inhibit the erosion of air moisture and oxygen to the device, thus improving the stability of the device. The interfacial modification of electron transport layer (PCBM) was carried out by using N- (-)-dioctyl-3-octanoalkyl-3 (4)-octyl-4-(10 -)-tetracarboimide (PTCDI-C8) as an interface modifier. Due to the high electron mobility of PTCDI-C8, a more flat film can be formed on the surface of PCBM. Therefore, the leakage current between PCBM and Al electrode is reduced, and the electron collection efficiency of cathode is improved. In addition, because PTCDI-C8 has a low HOMO energy level, it can block the reverse transport of the hole to the electrode, thus reducing the charge recombination at the interface. When the thickness of the film is 20 nm, the optimal device is obtained. Compared with the device without PTCDI-C8 layer, the PCE is increased from 5.26% to 8.65%. Among them, Voc=0.92 VCU 15.68 Ma / cm ~ 2 FFF ~ (60). In addition, the high stability of PTCDI-C8 hinders the erosion of PCBM by air, thus improving the stability of the device.
【學(xué)位授予單位】：天津理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TM914.4
【相似文獻】
相關(guān)期刊論文 前10條
1 陳志雄,付剛,唐大海;影響鈣鈦礦結(jié)構(gòu)陶瓷n型半導(dǎo)化的結(jié)構(gòu)因素[J];壓電與聲光;1999年06期
2 王曉莉,姚熹;復(fù)雜組成鈣鈦礦材料中的納米分相[J];西安交通大學(xué)學(xué)報;1995年09期
3 莊志強;王蘊輝;施紅陽;;鈮鎂酸鉛類鈣鈦礦結(jié)構(gòu)鐵電多晶體的制備技術(shù)[J];華南理工大學(xué)學(xué)報(自然科學(xué)版);1992年03期
4 趙旭,栗萍,唐貴德,張變芳,禹日程;Nb摻雜對雙鈣鈦礦化合物居里溫度的影響[J];河北師范大學(xué)學(xué)報;2004年04期
5 李福q，
本文編號：2254367
本文鏈接：http://sikaile.net/kejilunwen/dianlidianqilunwen/2254367.html
最近更新
教材專著
