【摘要】：太陽能的有效利用能夠緩解當(dāng)前的能源危機(jī)和環(huán)境污染這兩大社會(huì)問題。太陽能電池可以直接將太陽能轉(zhuǎn)換為電能,但是在當(dāng)今社會(huì)中并沒有得到廣泛應(yīng)用,究其主要原因是太陽能電池的轉(zhuǎn)換效率過低和生產(chǎn)成本過高。因此,提高轉(zhuǎn)換效率和降低生產(chǎn)成本是今后太陽能光伏技術(shù)發(fā)展的方向和目標(biāo)。微納結(jié)構(gòu)在光伏器件上的應(yīng)用能夠極大地減小電池吸收層的厚度,從而降低其生產(chǎn)成本。為了提高太陽能電池的光電轉(zhuǎn)換效率,很多研究工作都集中在新型光伏材料和陷光結(jié)構(gòu)的研發(fā)當(dāng)中。本文以太陽能電池的陷光結(jié)構(gòu)為研究對(duì)象,設(shè)計(jì)出了納米針光柵陣列和傾斜納米線陣列的新型陷光結(jié)構(gòu),并且還建立了球形金屬顆粒的表面等離子模型。通過數(shù)值仿真,對(duì)它們進(jìn)行了光學(xué)特性和陷光機(jī)理的研究。本文的主要研究?jī)?nèi)容和結(jié)果如下:首先,針對(duì)GaAs納米針光柵陣列,系統(tǒng)地研究了光柵陣列的結(jié)構(gòu)參數(shù)對(duì)光吸收的影響。研究結(jié)果表明,光柵陣列的光吸收性能受結(jié)構(gòu)參數(shù)的影響很大,經(jīng)過優(yōu)化后的光柵結(jié)構(gòu)在所考察的波長(zhǎng)范圍內(nèi)可以引起很寬波段內(nèi)的光吸收增強(qiáng)。在最優(yōu)參數(shù)配置下,納米針光柵陣列的光吸收率最高可達(dá)到98%,與矩形光柵陣列相比提高了20%以上。其次,提出了傾斜GaAs納米線陣列的陷光結(jié)構(gòu)。利用有限元方法,研究了傾斜納米線陣列的直徑和填充因子對(duì)光吸收特性的影響,并且優(yōu)化了該傾斜納米線陣列結(jié)構(gòu)。優(yōu)化后的傾斜納米線陣列,總吸收率最大可達(dá)到95%,短路電流可達(dá)到30.3mA/cm2。與豎直納米線陣列相比,傾斜納米線陣列的光學(xué)性能得到了很好的提高,這說明將納米線陣列做成傾斜結(jié)構(gòu),可以提高納米線陣列的陷光能力。最后,建立了以晶體硅為背景材料的金屬顆粒表面等離子陷光模型,并且分析了金屬顆粒的鑲嵌位置、直徑以及填充因子對(duì)晶體硅光學(xué)特性的影響。結(jié)果表明,硅材料的吸收率受金屬顆粒直徑和填充因子的影響很大,而受鑲嵌位置的影響很小。直徑和填充因子主要影響吸收峰的數(shù)目。為了探究光吸收增強(qiáng)的陷光機(jī)制,對(duì)吸收峰的產(chǎn)生機(jī)理進(jìn)行了分析。在晶體硅薄膜層里加入金屬顆粒,能夠在一定程度上提高晶體硅的光吸收能力。
[Abstract]:The effective use of solar energy can alleviate the current energy crisis and environmental pollution two major social problems. Solar cells can convert solar energy to electric energy directly, but it is not widely used in the society today. The main reason is that the conversion efficiency of solar cells is too low and the production cost is too high. Therefore, to improve conversion efficiency and reduce production costs is the direction and goal of solar photovoltaic technology in the future. The application of micro-nano structure in photovoltaic devices can greatly reduce the thickness of the absorber layer of the cell and thus reduce the production cost. In order to improve the photovoltaic conversion efficiency of solar cells, a lot of research work is focused on the research and development of new photovoltaic materials and trapped light structures. In this paper, a novel trapping structure of nanoscale grating array and tilted nanowire array is designed, and the surface plasma model of spherical metal particles is also established. By numerical simulation, the optical properties and trapping mechanism are studied. The main contents and results of this paper are as follows: firstly, the influence of the structure parameters of the grating array on the optical absorption is systematically studied for the GaAs nano-needle grating array. The results show that the optical absorption performance of the grating array is greatly affected by the structure parameters, and the optimized grating structure can lead to the enhancement of the optical absorption in a wide wavelength range. Under the optimal configuration, the photoabsorption rate of the nanoscale grating array can reach 98%, which is more than 20% higher than that of the rectangular grating array. Secondly, the trapping structure of inclined GaAs nanowire arrays is proposed. The influence of the diameter and filling factor of the tilted nanowire array on the optical absorption characteristics was studied by using the finite element method, and the structure of the tilted nanowire array was optimized. The optimized tilted nanowire array has a maximum absorptivity of 95 and a short-circuit current of 30.3 Ma / cm ~ 2. Compared with the vertical nanowire array, the optical properties of the inclined nanowire array are improved, which indicates that the oblique structure of the nanowire array can improve the trapping ability of the nanowire array. Finally, a plasma trapping model of metal particle surface with crystalline silicon as the background material is established, and the influence of the inlay position, diameter and filling factor of metal particles on the optical properties of silicon crystal is analyzed. The results show that the absorptivity of silicon is greatly influenced by the diameter of metal particles and the filling factor, but not by the inlay position. Diameter and filling factor mainly affect the number of absorption peaks. In order to explore the trapping mechanism of light absorption enhancement, the mechanism of absorption peak was analyzed. The addition of metallic particles into the crystalline silicon film layer can improve the optical absorption ability of the crystal silicon to a certain extent.
【學(xué)位授予單位】：鄭州大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TM914.4

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