發(fā)布時間：2018-06-15 13:28

  本文選題：高線性 + 非對稱��； 參考：《浙江大學(xué)》2017年碩士論文

【摘要】：射頻微波行業(yè)突飛猛進(jìn),促進(jìn)手機(jī)終端、智能控制系統(tǒng)、通信市場的快速發(fā)展,使得人們越來越依賴性能優(yōu)良的收發(fā)系統(tǒng),對高集成度、高性能和低成本射頻前端的需求愈發(fā)迫切。本設(shè)計中的射頻微波開關(guān)是射頻前端的關(guān)鍵元件,其電路性能將直接影響射頻系統(tǒng)性能。設(shè)計針對收發(fā)系統(tǒng)的導(dǎo)通關(guān)斷需求的單刀雙擲開關(guān)進(jìn)行研究,首先探討了射頻開關(guān)芯片市場的需求現(xiàn)狀,針對幾款常見芯片進(jìn)行參數(shù)對比綜合評價,進(jìn)而提出設(shè)計目標(biāo)。然后討論目前業(yè)內(nèi)常用工藝,對比得出用于專門設(shè)計開關(guān)芯片的0.5μm柵寬砷化鎵基贗配異質(zhì)結(jié)高速電子遷移率晶管(GaAs pHEMT)工藝的優(yōu)勢。此工藝能較好實現(xiàn)射頻前端集成模塊中的功率放大器、開關(guān)、低噪放等元件的設(shè)計,性能參數(shù)優(yōu)良�？梢詽M足高集成度的需求,功耗低且成本可控。文中針對發(fā)射支路與接收支路性能要求不同,創(chuàng)新設(shè)計非對稱結(jié)構(gòu)的開關(guān)拓?fù)?利用場效應(yīng)管的堆疊理論、對于開關(guān)管芯的多柵理論、開關(guān)控制的基本原理等在保證插入損耗以及隔離度的情況下著重提高其線性度。通過優(yōu)化接地電容增大開關(guān)的使用帶寬、提高諧波抑制能力。同時考慮減小鍵合線引入的電感影響等。為了進(jìn)一步提高功率處理能力,針對性設(shè)計大小合適的前饋電容。然后利用ADS軟件進(jìn)行原理圖與整體版圖設(shè)計、仿真,將插入損耗、反射損耗、隔離度等小信號性能參數(shù)與線性度包括諧波抑制比和輸入三階交調(diào)截點等進(jìn)行綜合分析,取性能折衷最優(yōu),完成版圖設(shè)計。最后完成流片、封裝,芯片大小為3*3 mm2。采用射頻微波試驗臺對開關(guān)芯片進(jìn)行實測,測試結(jié)果表明,本設(shè)計開關(guān)芯片工作帶寬為10MHz-2.6GHz,插入損耗(IL)小于0.6dB,隔離度(ISO)大于26dB,發(fā)射支路功率處理能力可達(dá)42dBm(70dBc),接收支路為35dBm(68dBc),符合應(yīng)用需求。
[Abstract]:The rapid development of RF and microwave industry promotes the rapid development of mobile terminal, intelligent control system and communication market, which makes people rely more and more on the excellent transceiver system and high integration. The demand for high performance and low-cost RF front-end is becoming more and more urgent. The RF microwave switch in this design is the key component of the RF front end, and its circuit performance will directly affect the RF system performance. A single-pole double-throw switch is designed for the on-off requirement of transceiver system. Firstly, the market demand of RF switch is discussed, and the parameters of several common chips are compared and evaluated, and then the design goal is put forward. Then the current common technology is discussed, and the advantages of the 0.5 渭 m gate width GaAs pHEMT-based pseudo-heterojunction GaAs pHEMTs process for designing switch chips are compared. This process can realize the design of power amplifier, switch, low noise amplifier and so on in RF front-end integrated module, and the performance parameters are good. It can meet the needs of high integration, low power consumption and controllable cost. In this paper, the switching topology of asymmetric structure is innovatively designed according to the different performance requirements of the transmitting branch and the receiving branch, and the multi-gate theory of the switch core is applied to the stack theory of FET. The basic principle of switch control is to improve the linearity of insertion loss and isolation. By optimizing the grounding capacitance, the bandwidth of the switch is increased, and the harmonic suppression ability is improved. At the same time, the influence of inductance induced by bonding line is also considered. In order to improve power processing capability, feed forward capacitors of appropriate size are designed. Then, the small signal performance parameters such as insertion loss, reflection loss, isolation and linearity, such as harmonic suppression ratio and input third-order intersecting cut-off point, are analyzed synthetically by using ads software to design schematic diagram and overall layout, simulation, etc. The performance tradeoff is obtained and the layout design is completed. The chip size is 3 3 mm 2 mm. The RF microwave test rig is used to test the switch chip. The test results show that, The operating bandwidth of the switch chip is 10MHz ~ 2.6GHz, the insertion loss is less than 0.6dB, the isolating degree is more than 26dB, the power processing capacity of the transmission branch is up to 42dBm ~ (-1) and the power processing capacity of the transmission branch is up to 70dB ~ (cc), and the receiving branch is 35dBm ~ (6) dB ~ (cc), which meets the requirement of application.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TM564

【參考文獻(xiàn)】

相關(guān)期刊論文 前7條

1 劉宇轍;梁曉新;萬晶;閻躍鵬;;一種DC-6GHz的GaAs PHEMT寬帶低插入損耗單刀雙擲開關(guān)[J];微電子學(xué)與計算機(jī);2016年03期

2 白元亮;田國平;;GaAs PHEMT通信開關(guān)電路設(shè)計[J];半導(dǎo)體技術(shù);2013年09期

3 邢孟江;楊銀堂;李躍進(jìn);許靖偉;;帶有直流偏置的毫米波單刀雙擲開關(guān)仿真與設(shè)計[J];微波學(xué)報;2011年05期

4 黎明;張海英;徐靜波;付曉君;;GaAs基E/D PHEMT技術(shù)單片集成微波開關(guān)及其邏輯控制電路[J];半導(dǎo)體學(xué)報;2008年09期

5 嚴(yán)豐慶,錢澄;射頻開關(guān)及其在通信系統(tǒng)中的應(yīng)用[J];電子器件;2005年01期

6 高學(xué)邦,杜紅彥,王小旭,趙靜,王同祥,韓麗華,高翠琢;GaAs MESFET開關(guān)模型的研究[J];半導(dǎo)體情報;2000年01期

7 葉禹康,孫偉東,俞土法,金毓銓;GaAs MMIC抗靜電能力研究[J];固體電子學(xué)研究與進(jìn)展;1999年04期

，

本文編號：2022159