發(fā)布時間：2018-01-15 03:02

  本文關(guān)鍵詞：鈣鈦礦薄膜太陽能電池的摻雜研究　出處：《北京信息科技大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 鈣鈦礦太陽能電池 p型摻雜 KI摻雜 KI和RbI共摻雜

【摘要】：2009年以來,有機-無機鹵化鈣鈦礦太陽能電池經(jīng)歷了飛躍式的發(fā)展,從最初的3.8%光電轉(zhuǎn)換效率到目前的22.1%。鈣鈦礦材料的最大優(yōu)點是它的吸光系數(shù)很大,并且有優(yōu)良的雙極性載流子輸運性質(zhì)。理想情況下,空穴傳輸層只能傳輸空穴,致密層只能傳輸電子。當有光照射到鈣鈦礦太陽能電池的光陽極時,鈣鈦礦層作為光吸收層吸收光子,鈣鈦礦被激發(fā),產(chǎn)生電子空穴對,電子向致密層方向傳輸,空穴向空穴傳輸層方向傳輸�；陔娮雍涂昭ǖ膫鞑シ较虻牟煌�,分別在致密層/鈣鈦礦界面和空穴傳輸層/鈣鈦礦界面產(chǎn)生電子濃度梯度和空穴濃度梯度。這樣,電子和空穴分別向致密層方向和空穴傳輸層方向擴散。然而,在鈣鈦礦層中電子和空穴向兩個方向擴散過程中會發(fā)生一定程度的復(fù)合,導(dǎo)致了光生載流子的損失。如果將鈣鈦礦層做成p-n結(jié)或p-i-n結(jié)構(gòu),當太陽光照在p-n結(jié)或p-i-n結(jié)上時,會激發(fā)形成空穴-電子對(激子),在p-n結(jié)或p-i-n結(jié)電場的作用下,激子首先被分離成為電子與空穴并分別向陰極和陽極輸運,光生空穴流向p區(qū),光生電子流向n區(qū),那么就會大大降低光生載流子在鈣鈦礦層中的復(fù)合,從而提高有機-無機鹵化鈣鈦礦太陽能電池的光電轉(zhuǎn)換效率,提高電池性能。Yanfa Yan課題組報道了利用鈣鈦礦外在摻雜性質(zhì)的密度泛函理論計算,得出了有機無機鈣鈦礦太陽能電池材料摻雜的方法,結(jié)果是在一個非平衡的生長條件下可以制備出n型鈣鈦礦,摻雜實現(xiàn)n型鈣鈦礦是十分困難的;通過摻雜IA族,IB族或者VIA族元素,例如Na、K、Rb、Cu和O在I-rich生長條件下可以形成p型鈣鈦礦。本論文對鈣鈦礦薄膜進行p型摻雜。通過在PbI2和MAI前驅(qū)體溶液中摻雜不同濃度的KI、KI和不同濃度RbI共摻雜制備鈣鈦礦薄膜。使用一步法反溶劑滴加氯苯對不同濃度的KI、KI和不同濃度RbI共摻雜制備MAPbI3鈣鈦礦薄膜進行表征,薄膜的表征有表面SEM、橫截面SEM、EDX、XRD測試;對它們制備得到的MAPbI3鈣鈦礦太陽能電池的表征有電流-電壓測試(J-V測試)和IPCE測試。測試結(jié)果表明摻雜不同濃度的KI、KI和不同濃度RbI共摻雜不利于鈣鈦礦太陽能電池的光電轉(zhuǎn)換效率。
[Abstract]:Since 2009, organic-inorganic perovskite solar cells have experienced a rapid development. From the initial 3.8% photoelectric conversion efficiency to the current 22.1.The biggest advantage of perovskite material is its large absorptivity and excellent bipolar carrier transport properties. The hole transport layer can only transfer holes and the dense layer can only transfer electrons. When light is irradiated to the photoanode of perovskite solar cells, the perovskite layer absorbs photons as the photoabsorption layer and the perovskite is excited. The generation of electron hole pairs, electron transport to the dense layer, hole transmission to the hole transport layer direction. Based on the different direction of electron and hole propagation. Electron concentration gradient and hole concentration gradient are produced at the dense layer / perovskite interface and hole transport layer / perovskite interface respectively. During the diffusion of electrons and holes in perovskite layer, a certain degree of recombination will occur, which leads to the loss of photogenerated carriers. If the perovskite layer is formed into p-n junction or p-i-n structure. When the sun illuminates on p-n or p-i-n junctions, a cavity-electron pair is generated (exciton, under the action of an electric field in p-n or p-i-n junctions). Excitons are first separated into electrons and holes and transported to cathode and anode respectively. Photogenerated holes flow to p region and photogenerated electrons flow to n region, so the photo-generated carrier recombination in perovskite layer will be greatly reduced. In order to improve the photoelectric conversion efficiency of organic-inorganic perovskite solar cells and improve the performance of the cell. Yanfa Yan team reported the density functional theory (DFT) calculation using perovskite external doping properties. The method of doping organic and inorganic perovskite solar cells is obtained. The results show that n-type perovskite can be prepared under a non-equilibrium growth condition, and it is very difficult to achieve n-type perovskite doping. By doping elements of IA group, IB group or VIA group, for example, Nahl Ko Rb. P-type perovskite can be formed by Cu and O under the condition of I-rich growth. In this paper, p-type perovskite films were doped with different concentrations of Ki in the solution of PbI2 and MAI precursors. Perovskite thin films were prepared by co-doping Ki with different concentrations of RbI. One step antisolvent was used to add chlorobenzene to different concentrations of Ki. MAPbI3 perovskite thin films were prepared by Ki and different concentrations of RbI co-doped. The MAPbI3 perovskite solar cells were characterized by current-voltage test (J-V test) and IPCE test. The co-doping of Ki and RbI is unfavorable to the photovoltaic conversion efficiency of perovskite solar cells.
【學(xué)位授予單位】：北京信息科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TM914.42

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