本文選題：室溫 + 射頻濺射　； 參考：《武漢理工大學(xué)》2015年碩士論文

【摘要】：同ITO薄膜相比,鋁摻雜氧化鋅(AZO)薄膜由于具有可以媲美的光電性能,并且其具有原材料豐富、制備成本低、性價(jià)比高、無毒害作用、環(huán)境穩(wěn)定性好、便于后期加工等優(yōu)點(diǎn),可以廣泛應(yīng)用于平板顯示器、薄膜太陽能電池等重要領(lǐng)域,大有在未來取代ITO薄膜在透明導(dǎo)電薄膜領(lǐng)域地位的趨勢。近幾十年來,關(guān)于AZO薄膜的制備工藝以及性能優(yōu)化的研究,國內(nèi)外的研究者已經(jīng)做了大量的工作,同時(shí)也取得了很多成果。磁控濺射法具有操作簡單、工藝穩(wěn)定、鍍膜均勻等突出優(yōu)點(diǎn),是制備AZO薄膜最常用和最成熟的方法。但是,在大多數(shù)關(guān)于用磁控濺射法制備AZO薄膜的報(bào)道中,沉積AZO薄膜都是要在高溫下進(jìn)行的,即在鍍膜時(shí)要對基片加熱,或者是在鍍膜過程結(jié)束后對樣品進(jìn)行退火處理。如此一來,就限制了薄膜在柔性襯底和某些敏感的光阻材料等不能耐受高溫的材料上的應(yīng)用。鑒于此,本論文對室溫下采用磁控濺射法制備AZO薄膜進(jìn)行了研究。采用射頻濺射,使用Al摻雜量為2 wt%的AZO陶瓷靶材,普通載玻片作為基片,在室溫下制備AZO薄膜樣品。研究了多組參數(shù)對薄膜性能的影響,并引入性能指數(shù)作為衡量薄膜光電綜合性能的指標(biāo)。同時(shí),提出了在基片和膜層之間使用SiO2薄膜作為緩沖層,對引入緩沖層前后樣品的性能進(jìn)行了對比,得出結(jié)論如下:(1)在本論文所述的實(shí)驗(yàn)條件下,所制備的AZO薄膜結(jié)晶性能良好,樣品中的晶粒都是在(002)面擇優(yōu)取向生長的;(2)經(jīng)過各組樣品的性能比對,得出的制備AZO薄膜的最佳工藝參數(shù)為:濺射功率300 W,工作氣壓0.25 Pa,沉積時(shí)間30 min。在最佳參數(shù)下沉積的薄膜,晶粒尺寸較大、結(jié)構(gòu)完整,方塊電阻為27.98?/□,可見光波段的平均透過率大于80%,性能指數(shù)ΦTC為4.32×10-3?-1;(3)引入SiO2緩沖層可以大幅度地提高AZO薄膜的電學(xué)性能。所制備的薄膜樣品相較于直接在載玻片上鍍膜,其方塊電阻值都大幅度減小。使用合適厚度SiO2薄膜作為緩沖層,可以減少薄膜中的殘余應(yīng)力,還可以起到阻礙基片中的Na+進(jìn)入到膜層中的作用,保證晶格的完整性,使薄膜的結(jié)晶性得到改善,晶粒尺寸變大。當(dāng)緩沖層的厚度為30 nm時(shí),薄膜的方塊電阻值為14.12?/□,可見光的平均透過率接近82%,與直接在載玻片上沉積相比透過率變化很小,電阻率為9.6×10-4?.cm,計(jì)算所得的性能指數(shù)值為9.56×10-3?-1,該值已經(jīng)優(yōu)于室溫下沉積的ITO薄膜。
[Abstract]:Compared with ITO thin films, aluminum doped zinc oxide (AZO) thin films have many advantages, such as abundant raw materials, low preparation cost, high cost performance, no toxicity, good environmental stability and easy processing. It can be widely used in many important fields, such as flat panel display, thin film solar cell and so on. It has a tendency to replace ITO film in transparent conductive film field in the future. In recent decades, researchers at home and abroad have done a lot of research on the preparation process and performance optimization of AZO films, and have also achieved a lot of results. Magnetron sputtering has the advantages of simple operation, stable process and uniform coating. It is the most common and mature method for the preparation of AZO thin films. However, in most of the reports on the preparation of AZO films by magnetron sputtering, the deposition of AZO films is carried out at high temperature, that is, the substrate should be heated or the samples should be annealed at the end of the coating process. This limits the application of thin films to materials that cannot withstand high temperature, such as flexible substrates and some sensitive photoresistive materials. In this paper, AZO thin films were prepared by magnetron sputtering at room temperature. AZO thin films were prepared at room temperature by RF sputtering using AZO ceramic target with Al doping content of 2 wt% and ordinary glass slide as substrate. The effect of multi-group parameters on the properties of the films was studied, and the performance index was introduced as the index to evaluate the photoelectric properties of the films. At the same time, using SiO2 film as buffer layer between substrate and film, the properties of samples before and after the introduction of buffer layer are compared. The conclusion is as follows: 1) under the experimental conditions described in this paper, The crystalline properties of the prepared AZO thin films are good. The optimum process parameters of AZO thin films were obtained as follows: sputtering power 300W, working pressure 0.25 Pa, deposition time 30 min. The films deposited under the optimum parameters have large grain size and complete structure, the square resistance is 27.98 / -, the average transmittance of visible light band is greater than 80, and the performance index 桅 TC is 4.32 脳 10 ~ (-3) -1 ~ (-1) the electrical properties of AZO thin films can be greatly improved by introducing SiO2 buffer layer. Compared with the direct coating on the glass slide, the sheet resistance of the prepared thin film samples is greatly reduced. Using appropriate thickness of SiO2 thin film as buffer layer can reduce the residual stress in the film, prevent Na in substrate from entering into the film, ensure the integrity of crystal lattice, and improve the crystallinity of the film. The grain size increases. When the thickness of the buffer layer is 30 nm, the square resistance of the film is 14.12 / -, and the average transmittance of visible light is close to 82. The resistivity is 9.6 脳 10 ~ (-4) 路cm, and the calculated performance index is 9.56 脳 10 ~ (-3) ~ (-1), which is better than that of ITO films deposited at room temperature.
【學(xué)位授予單位】：武漢理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TB383.2

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