本文選題：脈沖偏壓　切入點(diǎn)：磁過濾　出處：《真空科學(xué)與技術(shù)學(xué)報(bào)》2017年01期 　論文類型：期刊論文

【摘要】：在不同脈沖偏壓值下采用90°彎管磁過濾陰極電弧離子鍍于硅片表面制備四面體非晶碳膜(Ta-C),研究了脈沖偏壓對(duì)薄膜硬度、沉積速率、表面形貌及鍵價(jià)結(jié)構(gòu)的影響。結(jié)論表明,薄膜沉積速率隨脈沖偏壓值的增加呈先增后減趨勢(shì),偏壓值與膜層硬度值呈負(fù)相關(guān)性,高的偏壓會(huì)抑制膜層中sp3鍵的形成,還能在一定程度上抑制大顆粒形成。本文研究?jī)?nèi)容為工業(yè)應(yīng)用中通過脈沖偏壓調(diào)整優(yōu)化膜層綜合性能提供參考。
[Abstract]:Tetrahedral amorphous carbon films were prepared on the surface of silicon wafers by using 90 擄bend tube magnetically filtered cathode arc ion plating under different pulse bias voltage. The effects of pulse bias on the hardness, deposition rate, surface morphology and bond structure of the films were studied. The deposition rate increased firstly and then decreased with the increase of pulse bias voltage. The bias value was negatively correlated with the hardness of the film. High bias voltage inhibited the formation of sp3 bond in the film. It can also inhibit the formation of large particles to a certain extent. This paper provides a reference for optimizing the comprehensive properties of the film by pulse bias adjustment in industrial applications.
【作者單位】： 合肥工業(yè)大學(xué)機(jī)械工程學(xué)院;
【分類號(hào)】：TB383.2

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本文編號(hào)：1569005