【摘要】：在MEMS技術(shù)中,真空封裝是一項(xiàng)關(guān)鍵技術(shù)問題,其中吸氣劑工藝是高真空度獲得和維持的必要條件。本實(shí)驗(yàn)室以CNTs作為骨架,利用CNTs具有高比表面積和自身儲(chǔ)氣等特性制備了一種吸氣效率高、工藝簡(jiǎn)單、成本低的納米吸氣劑,但受限于CNTs生長(zhǎng)條件苛刻,與基底粘附力差,易污染等缺點(diǎn)。本論文提出基于VA-CNTs轉(zhuǎn)移技術(shù)的納米吸氣劑,為更進(jìn)一步利用CNTs高比表面積和自身儲(chǔ)氣的優(yōu)點(diǎn),克服集成于MEMS器件的相關(guān)缺點(diǎn)提供一類新的解決方案。 本文主要針對(duì)增大吸氣劑單位面積的吸氣速率和吸氣量?jī)煞矫?開展了在制備與激活吸氣劑薄膜工藝的研究、優(yōu)化,如濺射功率、壓強(qiáng)、時(shí)間以及溫度等參數(shù)。具體研究工作包括以下幾個(gè)部分： (1)在吸氣劑經(jīng)典模型的基礎(chǔ)上,提出了適用于CNTs納米吸氣劑的吸氣模型,并進(jìn)行詳細(xì)的理論分析,得到VA-CNTs/Ti納米吸氣劑的吸氣動(dòng)力學(xué)圖。與Ti膜吸氣劑相比,VA-CNTs/Ti納米吸氣劑的物理吸附速度是其n倍(n=S2/S1,S為比表面積),擴(kuò)散速度是其m倍(m=n(?)d2V(t)dt/(?)nd2V(t)dt,V(t)為Ti膜擴(kuò)散速度,d2為Ti膜厚度)。 (2)分析、歸納垂直陣列CNTs生長(zhǎng)機(jī)制,優(yōu)化CVD工藝參數(shù),制備VA-CNTs.提出并成功實(shí)現(xiàn)了基于玻璃漿料粘結(jié)劑的納米吸氣劑轉(zhuǎn)移技術(shù)。對(duì)VA-CNTs納米吸氣劑的制備和激活工藝進(jìn)行了相關(guān)方面研究。在VA-CNTs上濺射Ti的最佳工藝參數(shù)為8Pa,350W,10min。納米吸氣劑的最佳激活工藝條件為600℃,30min。 (3)采用BET法對(duì)納米吸氣劑進(jìn)行比表面積測(cè)試,結(jié)果表明VA-CNTs/Ti的BET比表面積為275.0071m2/g,證明了納米吸氣劑具有高比表面積。 (4)針對(duì)VA-CNTs納米吸氣劑,采用TGA對(duì)其吸氣性能測(cè)試,結(jié)果證明VA-CNTs/Ti納米吸氣劑具有吸氣性。
[Abstract]:Vacuum packaging is a key technical problem in MEMS technology, in which suction process is the necessary condition for high vacuum degree to be obtained and maintained. Using CNTs as skeleton, using CNTs with high specific surface area and its own gas storage characteristics, a kind of nano-absorbent with high suction efficiency, simple process and low cost was prepared. However, due to the harsh growth conditions of CNTs, and the poor adhesion to the substrate, the nano-absorbent was prepared with the advantages of high suction efficiency, simple process and low cost. The weakness of being easy to pollute. In this paper, nano-absorbent based on VA-CNTs transfer technology is proposed, which provides a new solution to make further use of the advantages of CNTs with high specific surface area and its own gas storage, and to overcome the relative shortcomings of integrated MEMS devices. In this paper, the process of preparing and activating getter film was studied and optimized, such as sputtering power, pressure, time, temperature and so on, in order to increase the suction rate and gas absorption rate per unit area of getter. The specific research work includes the following parts: (1) based on the classical model of suction agent, the inspiratory model suitable for CNTs nano-absorbent is proposed, and the theoretical analysis is carried out in detail. The inspiratory kinetic diagram of VA-CNTs/Ti nano-absorbent was obtained. Compared with Ti membrane getter, the physical adsorption rate and diffusion rate of VA-CNTs/Ti nano-absorbent are n-fold (n-S _ 2-S _ 1, S-specific surface area) and m-fold (m ~ (?) d _ (2) V-(t) dt/ (?) nd2V (t) dt,). V (t) is the diffusion rate of Ti film and D2 is the thickness of Ti film. (2) to analyze and summarize the growth mechanism of vertical array CNTs, optimize the technological parameters of CVD, and prepare VA-CNTs.. The nano-absorbent transfer technology based on glass paste binder was proposed and successfully realized. The preparation and activation process of VA-CNTs nano-absorbent were studied in this paper. The optimum parameters of sputtering Ti on VA-CNTs were 8 Pa, 350 W, 10 min. The optimum activation conditions of nano-absorbent were 600 鈩，

本文編號(hào)：2446578