【摘要】：非晶氧化物半導(dǎo)體(AOS)由于遷移率高,可以在低溫下制備等優(yōu)點(diǎn)而受到研究者的廣泛關(guān)注。采用AOS作為溝道層的薄膜晶體管(TFT)被認(rèn)為是下一代大尺寸、高分辨率以及柔性平板顯示的主流技術(shù)。目前AOS TFT主要是InGaZnO4為溝道層,雖然在日韓等企業(yè)中已經(jīng)逐步實(shí)現(xiàn)了工業(yè)化,但是仍然面臨著In元素成本高,TFT良率低的困擾。這樣一個(gè)技術(shù)變革的時(shí)代對我國的平板顯示工業(yè)是一個(gè)難得的機(jī)遇。因此,開展我國獨(dú)立自主的氧化物TFT技術(shù)是很有必要的。 本文通過脈沖激光沉積法研究了非晶SiZnSnO薄膜的室溫(25℃)制備過程。改變生長過程中的O2分壓,發(fā)現(xiàn)在5Pa氧分壓下對應(yīng)的SiZnSnO薄膜表面的平整度最好。XRD和HR-TEM表明室溫下生長和400℃退火后的薄膜都是處于非晶狀態(tài)。結(jié)合橢圓偏振發(fā)現(xiàn)SZTO(0.06)對應(yīng)的薄膜最致密。紫外-可見光透射譜測試結(jié)果表明SiZnSnO薄膜在可見光范圍內(nèi)的透過率都在80%以上。XPS表明Si對薄膜中氧空位具有抑制作用,摻入Si含量越多,薄膜中的氧空位就會(huì)越少。 將SiZnSnO應(yīng)用于TFT的溝道層。室溫下制備的TFT性能并不突出,但是在400℃退火后的器件達(dá)到了很好的性能,SZTO(0.06)對應(yīng)的TFT場效應(yīng)遷移率為μFE=0.80cm2V-1S-1,閾值電壓Vth=4.12V,亞閾值擺幅S=0.863V/decade,電流開關(guān)比Ion/off≈107.對SiZnSnO TFT的進(jìn)行了不同相對濕度與氣氛環(huán)境的穩(wěn)定性研究,發(fā)現(xiàn)TFT背溝道處吸附H_2O會(huì)導(dǎo)致關(guān)態(tài)電流和開態(tài)電流的增加,而Si的適當(dāng)引入會(huì)促進(jìn)TFT器件的長期穩(wěn)定性。 采用脈沖激光沉積技術(shù)制備了SiZnSnO/Si異質(zhì)結(jié),并通過XPS測定Zn和Sn的芯能級,計(jì)算了SiZnSnO/Si的價(jià)帶帶階,并結(jié)合SiZnSnO的光學(xué)禁帶寬度確定了SiZnSnO/Si異質(zhì)結(jié)的能帶結(jié)構(gòu)。
[Abstract]:Amorphous oxide semiconductor (AOS) has attracted much attention due to its high mobility and its ability to be prepared at low temperature. The thin film transistor (TFT) with AOS as channel layer is considered to be the mainstream technology for the next generation of large size, high resolution and flexible flat panel display. At present, AOS TFT is mainly InGaZnO4 as channel layer. Although it has gradually realized industrialization in Japan and South Korea, it still faces the problem of high cost of In elements and low yield of TFT. Such an era of technological change is a rare opportunity for China's flat panel display industry. Therefore, it is necessary to develop independent oxide TFT technology in China. The preparation process of amorphous SiZnSnO films at room temperature (25 鈩，

本文編號：2419331