分子量對(duì)α相聚偏氟乙烯介電性能與儲(chǔ)能特性的影響
發(fā)布時(shí)間:2018-10-18 11:16
【摘要】:制備了4種不同分子量的α相聚偏氟乙烯(PVDF)膜,研究了PVDF分子量對(duì)其介電性能與儲(chǔ)能特性的影響。研究結(jié)果表明,低分子量PVDF膜具有更窄的電滯回線,其充放電效率達(dá)到了73.05%,是高分子量薄膜的2.27倍。進(jìn)一步的研究發(fā)現(xiàn),在1 000kV/cm電場(chǎng)下,低分子量PVDF膜的漏導(dǎo)電流為0.07175μA,遠(yuǎn)低于高分子量PVDF膜,并體現(xiàn)出較高的電阻率(22.7TΩ·m),更適合作為儲(chǔ)能電容器的電介質(zhì)材料。
[Abstract]:Four 偽 -polymerized vinylidene fluoride (PVDF) membranes with different molecular weights were prepared. The effects of PVDF molecular weight on their dielectric properties and energy storage properties were studied. The results show that the low molecular weight PVDF film has a narrower hysteresis loop, and its charge-discharge efficiency reaches 73.05, which is 2.27 times of that of the high molecular weight film. It is found that the leakage current of low molecular weight PVDF film is 0.07175 渭 A under 1 000kV/cm electric field, which is much lower than that of high molecular weight PVDF film, and shows that high resistivity (22.7 T 惟 m),) is more suitable as dielectric material for energy storage capacitor.
【作者單位】: 電子科技大學(xué)光電信息學(xué)院電子薄膜與集成器件國(guó)家重點(diǎn)實(shí)驗(yàn)室;成都信息工程大學(xué)光電技術(shù)學(xué)院;重慶文理學(xué)院新型儲(chǔ)能器件及應(yīng)用工程研究中心;
【基金】:國(guó)家自然科學(xué)基金資助項(xiàng)目(51477026,61471085)
【分類號(hào)】:O632.21;TB383.2
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本文編號(hào):2278965
[Abstract]:Four 偽 -polymerized vinylidene fluoride (PVDF) membranes with different molecular weights were prepared. The effects of PVDF molecular weight on their dielectric properties and energy storage properties were studied. The results show that the low molecular weight PVDF film has a narrower hysteresis loop, and its charge-discharge efficiency reaches 73.05, which is 2.27 times of that of the high molecular weight film. It is found that the leakage current of low molecular weight PVDF film is 0.07175 渭 A under 1 000kV/cm electric field, which is much lower than that of high molecular weight PVDF film, and shows that high resistivity (22.7 T 惟 m),) is more suitable as dielectric material for energy storage capacitor.
【作者單位】: 電子科技大學(xué)光電信息學(xué)院電子薄膜與集成器件國(guó)家重點(diǎn)實(shí)驗(yàn)室;成都信息工程大學(xué)光電技術(shù)學(xué)院;重慶文理學(xué)院新型儲(chǔ)能器件及應(yīng)用工程研究中心;
【基金】:國(guó)家自然科學(xué)基金資助項(xiàng)目(51477026,61471085)
【分類號(hào)】:O632.21;TB383.2
,
本文編號(hào):2278965
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