【摘要】：為獲得高性能電池用二氧化鈦薄膜,采用射頻磁控濺射法制備了摻V的TiO2薄膜.使用分光光度計、催化反應(yīng)器和電化學(xué)工作站等研究了濺射時間、退火溫度和摻釩量等對TiO2薄膜光學(xué)性能、光催化性能和超親水性和電學(xué)性能的影響.研究表明濺射時間越長,薄膜紫外光區(qū)的透射率越低.3h條件下,在小于400nm區(qū)域內(nèi),濺射薄膜的透射率已經(jīng)降至60%以下.退火溫度對薄膜的親水性能和光催化性能有一定的影響,經(jīng)400℃退火的薄膜具有較好的光催化性能和超親水性.摻V使薄膜的吸收峰紅移和禁帶寬度變窄,當(dāng)摻雜量為0.5%時,TiO2薄膜紅移量最大,禁帶寬度變也為2.88eV.將制備的摻釩二氧化鈦薄膜制備成染料敏化太陽能電池(DSSC),結(jié)果表明摻V量為0.5%的二氧化鈦薄膜的光響應(yīng)范圍增大,所制備電池的開路電壓和短路電流都高于未摻雜電池,其中短路電流從24.82μA增大到了88.15μA.表明電池的綜合性能有所提高.
[Abstract]:In order to obtain TIO _ 2 thin films for high performance batteries, V-doped TiO2 films were prepared by RF magnetron sputtering. The effects of sputtering time, annealing temperature and vanadium doping amount on the optical properties, photocatalytic properties, superhydrophilicity and electrical properties of TiO2 films were investigated by spectrophotometer, catalytic reactor and electrochemical workstation. The results show that the longer the sputtering time is, the lower the transmittance of the film is in the ultraviolet region. The transmittance of the sputtering film has been reduced to less than 60% in the region smaller than 400nm. Annealing temperature has a certain effect on the hydrophilicity and photocatalytic properties of the films. The films annealed at 400 鈩，

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