【摘要】：本文研究了Al/Ni和Al/Co3O4兩種含能復(fù)合薄膜的制備方法和化學(xué)反應(yīng)特性,研究了集成兩種含能復(fù)合薄膜的反應(yīng)性半導(dǎo)體橋的能量轉(zhuǎn)換特性和規(guī)律,取得了重要的研究成果。 (1)通過(guò)制備工藝的研究,掌握了C0304納米棒的氨氣揮發(fā)誘導(dǎo)制備方法、Al/Ni和Al/Co3O4含能復(fù)合薄膜的磁控濺射制備方法,以及Al/Ni-SCB和Al/Co3O4-SCB兩種反應(yīng)性半導(dǎo)體橋的集成制備方法。 (2)通過(guò)FESEM、EDS、XRD、FTIR和DSC等多種手段的分析研究,獲得了Al/Ni和Al/Co3O4含能復(fù)合薄膜的形貌結(jié)構(gòu)、組成成分和熱反應(yīng)性能特征及規(guī)律。制備出的Al/Ni復(fù)合薄膜表面均勻致密,無(wú)尖銳峰,層狀結(jié)構(gòu)分明,組成成分分別為Al、Ni單質(zhì)；Al、Ni單層厚度分別為45nm、30nm時(shí),放熱量為1134.64J/g,達(dá)到了理論值的82.2%。制備出的納米棒為C0304,呈中空倒錐形狀,整齊致密地生長(zhǎng)于Si基片上,直徑-400nm,濺射沉積的Al緊密地排列在C0304納米棒上,形成了具有核-殼結(jié)構(gòu)的Al/Co3O4含能薄膜；當(dāng)沉積A1厚度為5μm時(shí),Al/Co3O4具有較大的放熱量,達(dá)到2254.6J/g, Al/Co3O4起始反應(yīng)溫度(580℃)較低,具有較高的反應(yīng)活性。 (3)通過(guò)電容放電方式的發(fā)火性能研究,掌握了Al/Ni-SCB和Al/Co3O4-SCB的發(fā)火特性和規(guī)律。充電電容為47μF時(shí),Al/Ni-SCB隨著充電電壓的增加,爆發(fā)時(shí)間變小,能量利用率變小,臨界發(fā)火能量幾乎保持恒定。Al/Ni-SCB最大火焰高度達(dá)9mm,產(chǎn)生的高溫火焰亮度和火花量相比裸橋SCB明顯增加,Al/Ni復(fù)合薄膜的存在使得半導(dǎo)體橋輸出能量倍增,提高了Al/Ni-SCB的點(diǎn)火能力；充電電容為47μF時(shí),在較低電壓(低于40V)的情況下,Al/Co3O4-SCB不能爆發(fā),隨著充電電壓的增加,爆發(fā)時(shí)間變小,能量利用率變小,臨界發(fā)火能量幾乎都集中在8.75mJ-9.10mJ之間。
[Abstract]:In this paper, the preparation methods and chemical reaction characteristics of two kinds of energetic composite films, Al/Ni and Al/Co3O4, are studied, and the energy conversion characteristics and laws of reactive semiconductor bridges integrated with two kinds of energetic composite films are studied. Important research results have been obtained. (1) through the study of preparation technology, we have mastered the preparation method of ammonia volatilization induction of C0304 nanorods. The magnetron sputtering method of Al / Ni and Al/Co3O4 energetic composite films has been obtained. And the integrated preparation of Al/Ni-SCB and Al/Co3O4-SCB reactive semiconductor bridges. (2) the morphology, composition, thermal reaction properties and characteristics of Al/Ni and Al/Co3O4 energetic composite films were obtained by means of FESEM,EDS,XRD,FTIR and DSC. The surface of the Al/Ni composite film is uniform and compact, without sharp peak, with distinct layered structure. When the composition of the monolayer of Al,Ni is 45 nm, the heat release is 1134.64 J / g, which reaches the theoretical value of 82.2. The prepared nanorods are C0304, with hollow inverted cone shape, neatly and compactly grown on Si substrates with diameters of -400nmm. Al deposited by sputtering are arranged closely on C0304 nanorods to form core-shell structure Al/Co3O4 energetic films. When the thickness of deposition A1 is 5 渭 m, Al / Co _ 3O _ 4 has large heat release, reaching 2254.6 J / g, and the initial reaction temperature of Al/Co3O4 is lower (580 鈩，

本文編號(hào)：2235957