本文選題：CdTe薄膜 + 太陽(yáng)能電池��； 參考：《濟(jì)南大學(xué)》2017年碩士論文

【摘要】：碲化鎘(CdTe)薄膜太陽(yáng)能電池是一種以p型CdTe和n型CdS所組成的異質(zhì)結(jié)為基礎(chǔ)的薄膜太陽(yáng)能電池。CdTe層作為光吸收層,其禁帶寬度為1.46 eV,光吸收率高,是一種典型的II-VI族直接帶隙半導(dǎo)體。CdTe薄膜太陽(yáng)能電池具有理論轉(zhuǎn)換效率高,電池性能穩(wěn)定,制備工藝簡(jiǎn)單等諸多優(yōu)點(diǎn),備受?chē)?guó)內(nèi)外關(guān)注。CdTe薄膜的制備方法有很多種,包括近空間升華法,氣相輸運(yùn)法,磁控濺射法和電化學(xué)沉積法等等。其中,電化學(xué)沉積法因其成本低廉,工藝簡(jiǎn)單,易于大面積制備等優(yōu)點(diǎn)受到了廣大國(guó)內(nèi)外科研人員的青睞。CdS層作為CdTe薄膜太陽(yáng)能電池的窗口層,CdS中Cl濃度會(huì)影響電池中緩沖層的形成,化學(xué)浴沉積過(guò)程中Cl在CdS薄膜中的引入必將影響電池的性能。Cl摻雜CdTe是形成高效電池的必備條件。在電化學(xué)法制備的CdTe薄膜電池中,Cl通常通過(guò)電解質(zhì)溶液在電沉積過(guò)程中被引入CdTe薄膜中,以提高薄膜質(zhì)量和電池性能,但其作用機(jī)理尚不清晰。目前電化學(xué)沉積的CdTe薄膜的主要問(wèn)題是晶粒小,晶界多,已有的退火方式會(huì)造成薄膜中氣孔較多,電池的光生載流子復(fù)合嚴(yán)重,電池轉(zhuǎn)換效率低。因此,需要優(yōu)化電化學(xué)沉積CdTe薄膜的退火工藝來(lái)提高CdTe薄膜的結(jié)構(gòu)和電池性能。同時(shí),電化學(xué)沉積的CdTe薄膜的晶體結(jié)構(gòu)和厚度的特殊性,也需要與其相適應(yīng)的背接觸層沉積和退火條件以提高電池性能。本文重點(diǎn)就以上這些問(wèn)題展開(kāi)研究,主要研究?jī)?nèi)容如下:(1)研究了CdS薄膜中Cl殘留對(duì)薄膜結(jié)構(gòu)性能及組裝電池性能的影響。研究采用醋酸鎘與氯化鎘兩種溶液體系化學(xué)浴沉積CdS薄膜。研究發(fā)現(xiàn),兩種體系中沉積的CdS薄膜均為六方相結(jié)構(gòu)的n型半導(dǎo)體。退火后,CdCl2體系中制備的CdS薄膜晶粒尺寸要大于Cd(CH3COO)2體系中制備的CdS,其表面平整致密。所有CdS薄膜熱處理后的禁帶寬度都有所降低,但相比而言CdCl2體系中制備的CdS薄膜的禁帶寬度更大。從Mott-Schottky曲線(xiàn)計(jì)算的載流子濃度發(fā)現(xiàn),退火會(huì)降低CdS薄膜的載流子濃度,但隨著更多Cl的引入載流子濃度又會(huì)增加。結(jié)果表明,CdS薄膜中Cl的殘留將導(dǎo)致S空位及膜內(nèi)應(yīng)力的減少。通過(guò)組裝的電池性能發(fā)現(xiàn),采用CdCl2體系制備的CdS薄膜組裝的電池性能更優(yōu)。(2)通過(guò)對(duì)比含Cl與否的電解質(zhì)溶液所沉積CdTe薄膜的結(jié)構(gòu)性能,研究了Cl在電解質(zhì)溶液中的引入對(duì)CdTe薄膜的電沉積過(guò)程,結(jié)構(gòu)性能及所組裝電池性能的影響。研究發(fā)現(xiàn),含Cl電解質(zhì)溶液中沉積出的CdTe薄膜的結(jié)構(gòu)性能均優(yōu)于不含Cl電解質(zhì)溶液中沉積出的薄膜,這要?dú)w因于薄膜電導(dǎo)率的提高,進(jìn)而減少了薄膜沉積過(guò)程中反應(yīng)界面處的電位降,使得薄膜沉積以生長(zhǎng)為主,從而獲得了優(yōu)異的初始結(jié)晶質(zhì)量。此外,在不含Cl的電解質(zhì)溶液中,提高沉積電位同樣可獲得良好的結(jié)晶質(zhì)量。退火后,含Cl溶液中沉積的CdTe薄膜膜內(nèi)Cl的殘留使得所組裝電池的性能得到了提高。(3)提出了一種針對(duì)電化學(xué)沉積法制備CdTe薄膜太陽(yáng)能電池的新型退火工藝。與傳統(tǒng)退火工藝相比,在Cl激活處理前,一個(gè)額外的預(yù)退火工藝被引入使得在Cl激活處理前CdTe薄膜可以獲得良好的結(jié)晶性,最小化晶界的存在。因此,在第二步的Cl激活處理中,適度抑制了Cl沿著晶界滲入CdTe薄膜,并因此獲得了較傳統(tǒng)一步法更優(yōu)良的CdS/CdTe界面。界面處孔洞的減少,也使得所組裝的電池獲得了更高的量子效率及光電轉(zhuǎn)換效率。兩步法退火工藝為進(jìn)一步提高電化學(xué)沉積法制備CdTe薄膜太陽(yáng)能電池的性能提供了一個(gè)新的思路。(4)為了優(yōu)化電化學(xué)沉積法制備CdTe薄膜太陽(yáng)能電池中背接觸層的制備工藝,對(duì)不同酸腐時(shí)間,Cu層厚度及退火溫度處理下的電池性能進(jìn)行了分析,發(fā)現(xiàn)當(dāng)酸腐時(shí)間為10 s,Cu層厚度為8 nm,退火溫度為200℃的時(shí)候,所獲電池性能最佳。這是由于對(duì)CdTe層進(jìn)行適時(shí)的蝕刻處理可以去除表面的高阻氧化層,并形成一層富Te層。在富Te層表面,制備一層合適厚度的Cu層,經(jīng)適宜溫度退火后生成一個(gè)CuxTe層,形成重?fù)诫s層,降低背接觸勢(shì)壘,促進(jìn)了CdTe與背電極之間形成了歐姆接觸,從而最終提高了電池的性能。
[Abstract]:Cadmium telluride (CdTe) thin film solar cell is a kind of thin film solar cell.CdTe layer based on P type CdTe and N CdS as the optical absorption layer. The band gap is 1.46 eV, and the optical absorption rate is high. It is a typical II-VI family direct band gap semiconductor.CdTe thin film solar cell with high theoretical conversion efficiency and battery property. It has many advantages, such as stability, simple preparation technology and so on. There are many kinds of preparation methods concerned with.CdTe films at home and abroad, including near space sublimation, gas phase transport, magnetron sputtering and electrochemical deposition, etc., in which the electrochemical deposition has many advantages, such as low cost, simple process and easy to make large area. The researchers favor the.CdS layer as the window layer of the CdTe thin film solar cell, and the Cl concentration in CdS will affect the formation of the buffer layer in the battery. The introduction of Cl in the CdS film during the chemical bath deposition will certainly affect the performance of the battery and the.Cl doping CdTe is a necessary condition for the formation of high efficiency batteries. In the CdTe thin film battery prepared by the electrochemical method, Cl passes. The electrolyte solution is often introduced into the CdTe film in the electrodeposition process to improve the film quality and battery performance, but its mechanism is not clear. The main problem of the electrochemical deposition of CdTe film is that the grain size is small and the grain boundary is large. The existing annealing methods will cause more pores in the film, and the battery's optical carrier recombination is serious. The efficiency of battery conversion is low. Therefore, it is necessary to optimize the annealing process of Electrodeposited CdTe films to improve the structure and battery performance of the CdTe thin films. At the same time, the crystal structure and thickness of the electrodeposited CdTe films also need to be deposited and retreated to improve the battery performance. The main research contents are as follows: (1) the effects of Cl residue on the structural properties and the performance of the assembled battery in CdS films are studied. The study of the deposition of CdS films by two solution system chemical bath with cadmium acetate and cadmium chloride shows that the CdS films deposited in the two systems are all N type semiconductors with the structure of six square phase. After annealing, the grain size of the CdS film prepared in the CdCl2 system is larger than the CdS produced in the Cd (CH3COO) 2 system. Its surface is smooth and compact. The band gap of all CdS films is reduced after heat treatment, but the forbidden band width of the CdS film prepared in the CdCl2 system is larger. The carrier concentration calculated from the Mott-Schottky curve is found, Annealing will reduce the carrier concentration of the CdS film, but as more Cl is introduced, the carrier concentration will increase. The results show that the residual Cl in the CdS film will lead to the decrease of the S vacancy and the internal stress in the membrane. The battery performance of the CdCl2 system is better to be assembled by the assembly of the battery. (2) whether the Cl is compared or not by comparison. The structure properties of CdTe films deposited by electrolyte solution were studied. The effects of the introduction of Cl in electrolyte solution on the electrodeposition, structural properties and the performance of the assembled cells were studied. It was found that the structure properties of the CdTe films deposited in the Cl electrolyte solution were better than those in the Cl electrolyte solution without the electrolyte solution. This is attributable to the increase of the conductivity of the film, thus reducing the potential drop at the reaction interface during the deposition of the film, making the deposition of the film dominated by growth, thus obtaining excellent initial crystallization quality. In addition, a good crystalline quality can be obtained by increasing the deposition potential in an electrolyte solution without Cl. After annealing, the solution contains a Cl solution. The residue of Cl in the deposited CdTe film film improves the performance of the assembled cells. (3) a new annealing process is proposed for the preparation of CdTe thin film solar cells by electrochemical deposition. Compared with the traditional annealing process, an additional pre annealing process is introduced before the Cl activation process to make CdTe before the Cl activation process. The thin film can obtain good crystallinity and minimize the existence of grain boundaries. Therefore, in the second step Cl activation treatment, Cl appropriately inhibits the infiltration of the CdTe film along the grain boundary, and thus obtains a better CdS/CdTe interface than the uniform gait. The decrease of the pores at the interface also makes the assembled cells obtain higher quantum efficiency and light. The two step annealing process provides a new idea to further improve the performance of CdTe thin film solar cells by electrochemical deposition. (4) in order to optimize the preparation process of the back contact layer in the CdTe thin film solar cell by electrochemical deposition, the electric power of different acid decay time, Cu layer thickness and annealing temperature treatment The performance of the pool is analyzed. It is found that when the acid time is 10 s, the thickness of the Cu layer is 8 nm and the annealing temperature is 200 c, the performance of the battery is the best. This is because the etching treatment of the CdTe layer can remove the high resistance oxidation layer on the surface and form a layer of rich Te layer. The suitable thickness of the Cu layer on the surface of the rich Te layer is suitable. After temperature annealing, a CuxTe layer is generated to form a heavy doped layer, which reduces the potential barrier of the back contact, and promotes the formation of ohm contact between the CdTe and the back electrode, thus ultimately improving the performance of the battery.
【學(xué)位授予單位】：濟(jì)南大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TB383.2;TM914.4

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