本文選題：PZT + 溶膠-凝膠法　； 參考：《化工新型材料》2017年11期

【摘要】：鋯鈦酸鉛(PZT)鐵電薄膜具有高的剩余極化強(qiáng)度和機(jī)電耦合系數(shù),是制備各種傳感器和存貯器優(yōu)良的功能材料。在器件的制備工藝中,需要將PZT鐵電膜沉積到單晶Si基板上,但是,PZT過高的結(jié)晶溫度會(huì)嚴(yán)重地破壞Si基板。為了降低PZT的結(jié)晶溫度,使用紫外光輔助熱處理技術(shù)對(duì)PZT前驅(qū)體薄膜進(jìn)行預(yù)處理,可以將PZT的結(jié)晶溫度降低至475℃,從而實(shí)現(xiàn)PZT薄膜的低溫制備。在紫外光的預(yù)處理過程中,通過光源與PZT膜中的有機(jī)基團(tuán)發(fā)生光化學(xué)作用,從而形成不溶于溶劑的活性單體,通過溶劑的清洗,可以實(shí)現(xiàn)對(duì)前驅(qū)體膜的微加工,形成PZT陣列,為制備高密度存貯器所需要的邏輯陣列提供了有意義的探索。
[Abstract]:Lead zirconate titanate (PZT) ferroelectric thin film has high residual polarization strength and electromechanical coupling coefficient. It is an excellent functional material for the preparation of various sensors and memory devices. It is necessary to deposit PZT ferroelectric film on single crystal Si substrate in the fabrication process, but the high crystallization temperature of PZT will seriously destroy the Si substrate. In order to reduce the crystallization temperature of PZT, the PZT precursor films can be pretreated by UV assisted heat treatment. The crystallization temperature of PZT films can be reduced to 475 鈩，

本文編號(hào)：2050064