本文選題：TiSi_2薄膜 + 表面結(jié)構(gòu)��； 參考：《浙江大學(xué)》2014年碩士論文

【摘要】：由于人口的快速增長(zhǎng)和工業(yè)化步伐的不斷加快,水污染變得越來(lái)越嚴(yán)重。污水中一般含有酸、堿、氧化劑,氯化物、氨、氟化物、硝基化合物以及銅、鎘、汞、砷等化合物。為了人們的健康,需要更多,更方便的能夠?qū)崟r(shí)監(jiān)測(cè)污水中離子濃度的裝置,以監(jiān)測(cè)水質(zhì)是否被污染。雙電層電容是通過(guò)在電極表面吸附電解質(zhì)離子來(lái)儲(chǔ)能的,其在低電解液濃度時(shí)的電容值隨電解液濃度的增大而增大,有望被應(yīng)用于污水的實(shí)時(shí)監(jiān)測(cè)。 硅化物薄膜具有低電阻,高的熱穩(wěn)定性和化學(xué)穩(wěn)定性,低的表面逸出功,硅化鈦與硅工藝能很好的匹配,因此是一種很好的電極材料�？紤]到不同制備條件下制備得到的薄膜表面結(jié)構(gòu)有很大差別。另一方面,雙電層電容的電容值不僅與電極的孔隙率有關(guān),還與孔尺寸、孔的拓?fù)鋵W(xué)特性,電解液中離子尺寸等都相關(guān)。因而研究不同薄膜制備條件與薄膜結(jié)構(gòu)的關(guān)系,不同電解質(zhì)離子在不同硅化鈦薄膜電極雙電層電容器中的表現(xiàn),對(duì)提高材料的應(yīng)用性能,對(duì)控制和制備高性能器件將具有非常重要的科學(xué)意義和應(yīng)用價(jià)值。 本文通過(guò)APCVD法在玻璃基板上制備了不同沉積溫度,不同硅鈦比例的TiSi2薄膜,并通過(guò)XRD,SEM,AFM研究了其結(jié)晶性和表面結(jié)構(gòu),通過(guò)循環(huán)伏安測(cè)試研究了其雙電層電容特性,并分析了薄膜的表面結(jié)構(gòu),電解液濃度和電解質(zhì)對(duì)其雙電層電容特性和循環(huán)伏安曲線形態(tài)的影響,并建立了它們之間的理論關(guān)系。 研究表明,不同硅鈦比例和沉積溫度下,TiSi2薄膜的結(jié)晶性和表面結(jié)構(gòu)分別受到吉布斯自由能和晶體成核與長(zhǎng)大的影響。可通過(guò)調(diào)節(jié)硅鈦比例,沉積溫度獲得具有不同表面結(jié)構(gòu)的TiSi2薄膜,要獲得低堆積密度,大粗糙度的TiSi2薄膜時(shí),應(yīng)控制硅鈦比為2,沉積溫度為6800C和730℃。 硅化鈦薄膜,納米線均具有較好的雙電層電容特性,其循環(huán)伏安曲線呈準(zhǔn)矩形。TiSi2薄膜的雙電層比電容值與薄膜的堆積密度呈負(fù)相關(guān)關(guān)系,與薄膜表面粗糙高度呈正相關(guān)關(guān)系。可通過(guò)調(diào)節(jié)硅鈦比例,沉積溫度獲得具有不同比電容的TiSi2薄膜,要獲得比電容值大的硅化鈦薄膜電極,應(yīng)控制硅鈦比為2,沉積溫度為680℃和730℃。 實(shí)際雙電層電容體系中因存在串聯(lián)電阻,循環(huán)伏安曲線偏離標(biāo)準(zhǔn)的矩形。隨著串聯(lián)電阻的增大,曲線偏離矩形的程度增大。受薄膜表面精細(xì)結(jié)構(gòu)的影響,串聯(lián)電阻并非定值,其隨電壓變化符合下列關(guān)系式：R=R_1+[R_2-(KV)~2]=R_0-(KV)~2 這最終導(dǎo)致了大電壓處的電流峰的出現(xiàn),電流峰隨著K的增大,凡的減小而增強(qiáng)。電流峰僅在電壓到達(dá)一定值時(shí)出現(xiàn),且隨電壓掃描速率的增大而增大。 隨著電解液濃度的增大,TiSi2薄膜的電容值先線性增大,后達(dá)到飽和值后保持不變。成功制得了比電容值達(dá)320μF/cm2的TiSi2薄膜,是同樣測(cè)試條件下ITO薄膜的比電容的22倍。硅化鈦納米線電極的比電容可達(dá)1308.7μF/cm2,是ITO薄膜的90倍。TiSi2薄膜在0.05mol/L的Na2SO4溶液中的比電容值就可以達(dá)到其在去離子水中的24倍。其在Na2SO4溶液中的飽和比電容是去離子水中的59倍,表現(xiàn)出在污水監(jiān)測(cè)方面極好的應(yīng)用前景。
[Abstract]:Water pollution is becoming more and more serious because of the rapid growth of population and the accelerating pace of industrialization. The sewage usually contains acids, bases, oxidizers, chlorides, ammonia, fluoride, nitro compounds, and copper, cadmium, mercury, and arsenic compounds. For people's health, more and more convenient devices can be used to monitor the concentration of ions in the sewage in real time. To monitor whether the water quality is polluted or not, the double layer capacitance is used to store the energy by adsorbing electrolyte ions on the surface of the electrode. The capacitance value increases with the increase of the electrolyte concentration in the low electrolyte concentration. It is expected to be applied to real-time monitoring of sewage.
Silicide films have low resistance, high thermal stability and chemical stability, low surface escape work, and titanium silicide can match well with silicon technology. Therefore, it is a good electrode material. Considering that the surface structure of the films prepared under different preparation conditions is very different. On the other hand, the capacitance value of the double layer capacitance is not only with the electricity. The relationship between the pore size, the topological properties of the pores, the ion size in the electrolyte and so on. Therefore, the relationship between the preparation conditions of different films and the structure of the film, the performance of different electrolyte ions in the double layer capacitor of different titanium silicide film electrodes, the improvement of the application performance of the materials, and the control and preparation of the high performance of the materials are also studied. Devices will have very important scientific significance and application value.
In this paper, TiSi2 films with different deposition temperatures and different silicon and titanium ratios were prepared on the glass substrate by APCVD method. The crystallinity and surface structure of the films were studied by XRD, SEM and AFM. The characteristics of the double layer capacitance were studied by cyclic voltammetry. The surface structure of the films, the electrolyte concentration and the electrolyte to the double layer capacitance were analyzed. The relationship between sex and cyclic voltammetry curves was established, and the theoretical relationship between them was established.
The results show that the crystallization and surface structure of TiSi2 films are affected by the free energy of Gibbs and the nucleation and growth of crystal under different Si and Ti ratio and deposition temperature. The TiSi2 films with different surface structures can be obtained by adjusting the proportion of silicon and titanium and at the deposition temperature. To obtain the TiSi2 thin films with low bulk density and large roughness, it should be controlled. The ratio of Si to Ti is 2, and the deposition temperature is 6800C and 730 C.
Titanium silicide films and nanowires have good double layer capacitance characteristics. The cyclic voltammetry curves of the quasi rectangular.TiSi2 film have a negative correlation with the bulk density of the thin films, and have a positive correlation with the surface roughness of the thin films. By adjusting the ratio of silicon and titanium to the deposition temperature, the TiSi2 has a different specific capacitance. To obtain the titanium silicide thin film electrode with larger specific capacitance, the silicon titanium ratio should be controlled at 2, and the deposition temperature is 680 and 730 C.
Due to the existence of series resistance in the actual double layer capacitance system, the cyclic voltammetry curve deviates from the standard rectangle. With the increase of the series resistance, the curve deviates from the rectangle. The series resistance is not a fixed value influenced by the fine structure of the film surface. The variation of the series resistance according to the voltage is in accordance with the following relation: R=R_1+[R_2- (KV) ~2]=R_0- (KV) ~2
This eventually leads to the emergence of the current peak at large voltage. The current peak increases with the increase of K, and the current peak appears only when the voltage reaches a certain value, and increases with the increase of the voltage scanning rate.
With the increase of electrolyte concentration, the capacitance value of TiSi2 film increases first and then remains unchanged after reaching the saturation value. The TiSi2 thin film with a specific capacitance of 320 mu F/cm2 is successfully prepared, which is 22 times the specific capacitance of the ITO film under the same test conditions. The specific capacitance of the titanium silicide nanowire electrode can reach 1308.7 mu F/cm2, and the 90 times.TiSi2 thin of the ITO film. The specific capacitance of the membrane in the Na2SO4 solution of 0.05mol/L can reach 24 times that of the deionized water. Its saturation specific capacitance in the Na2SO4 solution is 59 times that of the deionized water, showing an excellent application prospect in the field of sewage monitoring.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TB383.2

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本文編號(hào)：1938831