本文選題：二氧化釩 + 快速熱處理�。� 參考：《稀有金屬材料與工程》2017年08期

【摘要】：采用射頻磁控濺射方法在單晶硅基底表面制備了單一相納米結(jié)構(gòu)二氧化釩(VO_2)薄膜,相變幅度超過2個量級;利用快速熱處理設(shè)備對VO_2薄膜進行熱處理,研究氮氣氛下快速熱處理溫度對VO_2相變特性的影響。通過X射線衍射儀、掃描電子顯微鏡、高精度透射電子顯微鏡和四探針測試儀對熱處理前后薄膜的結(jié)晶結(jié)構(gòu)、表面形貌和電學(xué)相變特性分別進行了測試。實驗結(jié)果表明,快速熱處理狀態(tài)下,溫度為300℃時,VO_2薄膜的電阻相變幅度由200倍增加到277倍,但是當(dāng)溫度超過350℃后,相變性能迅速變差,相變幅度由2個量級下降為小于1個量級,當(dāng)溫度超過500℃時,相變特性消失;熱處理溫度升高的過程中,單斜VO_2(011)結(jié)晶結(jié)構(gòu)逐漸消失,薄膜的成分轉(zhuǎn)變?yōu)閂4O7;快速熱處理過程中薄膜內(nèi)的顆粒尺寸保持不變。研究結(jié)果將有助于增強對VO_2薄膜在溫度差異大、變化速度快環(huán)境中的特性進行分析與應(yīng)用。
[Abstract]:VO_2 thin films were prepared by RF magnetron sputtering on monocrystalline silicon substrates with a phase transition amplitude of more than 2 orders of magnitude. The effect of rapid heat treatment temperature on the phase transition characteristics of VO_2 in nitrogen atmosphere was studied. The crystalline structure, surface morphology and electrical phase transition characteristics of the films before and after heat treatment were measured by X-ray diffractometer, scanning electron microscope, high precision transmission electron microscope and four-probe tester. The experimental results show that at 300 鈩，

本文編號：1916275