本文選題：稀土離子摻雜 + LiNbO_3　； 參考：《曲阜師范大學(xué)》2017年碩士論文

【摘要】：鈮酸鋰(LiNbO3)有大的鐵電、壓電、電光、聲光、非線性光學(xué)等性質(zhì),可廣泛被用于光波導(dǎo)調(diào)制器、傳感器、偏振器等光波導(dǎo)器件的制備。光學(xué)器件是集成光學(xué)中非常重要的組成部分,薄膜材料制備的器件在很多方面優(yōu)于體材料器件,因此在硅基片上沉積LiNbO3(LN)薄膜并對(duì)其性質(zhì)進(jìn)行研究將會(huì)對(duì)集成光學(xué)器件研究及光通信的發(fā)展起到一定的促進(jìn)作用。氧化鋅(ZnO)能帶隙大、激子束縛能高是很好的摻雜基質(zhì),可用于照明、太陽(yáng)能電池、導(dǎo)電薄膜等研究領(lǐng)域。稀土離子有豐富的能級(jí)結(jié)構(gòu)、發(fā)光范圍寬,多被應(yīng)用于制備有源器件。Er離子的躍遷4I13/2→4I15/2發(fā)射波長(zhǎng)約為1.54μm,該波段對(duì)應(yīng)著平面波導(dǎo)的最低損耗傳輸窗口。常溫下銪離子的躍遷5D0→7I2發(fā)射波長(zhǎng)為618nm,多被用于信號(hào)燈、探針、固體激光材料、醫(yī)療等領(lǐng)域�，F(xiàn)在利用脈沖激光沉積技術(shù)制備出傳輸損耗低、熒光強(qiáng)度大的有源氧化物薄膜研究還不是很多,靈活控制稀土離子在薄膜中的摻雜濃度并研究稀土離子濃度對(duì)薄膜結(jié)晶質(zhì)量影響的也不是很多。因此課題組運(yùn)用脈沖激光沉積技術(shù)通過(guò)改變實(shí)驗(yàn)沉積條件在SiO2/Si(111)襯底上制備了多組擇優(yōu)取向的氧化物薄膜,并利用X射線衍射儀、臺(tái)階儀、棱鏡耦合設(shè)備、熒光光譜儀、高倍鏡、冷場(chǎng)發(fā)射掃描電鏡對(duì)制備的樣品進(jìn)行各種物理性質(zhì)表征,下面是具體的研究?jī)?nèi)容及研究結(jié)果:1.利用PLD技術(shù)在SiO2/Si(111)襯底上沉積了擇優(yōu)取向的LN薄膜,探究了O2/Ar氣氛、襯底溫度、氧壓、脈沖激光重復(fù)頻率、腔外退火處理對(duì)薄膜質(zhì)量的影響,得出利用此設(shè)備制備擇優(yōu)取向LN薄膜的最佳實(shí)驗(yàn)參數(shù)組合:襯底溫度500℃,襯底-靶材距離4cm、激光重復(fù)頻率3Hz、氧壓2.0Pa、800℃腔外退火處理、LN陶瓷靶。測(cè)試薄膜光波導(dǎo)性質(zhì)、表面形貌時(shí)發(fā)現(xiàn):沉積時(shí)間短的樣品表面很光滑、晶粒致密但是厚度(200nm)太薄光很容易進(jìn)入到襯底中去,很難形成波導(dǎo);沉積時(shí)間長(zhǎng)的樣品厚度足夠形成波導(dǎo)但是薄膜表面出現(xiàn)很多裂紋,目前課題組還沒(méi)把光耦合進(jìn)樣品中去。2.利用PLD技術(shù)通過(guò)改變實(shí)驗(yàn)條件在SiO2/Si(111)襯底上制備了多組擇優(yōu)取向的Er:LN薄膜,實(shí)驗(yàn)中選擇的沉積靶材不是固定比例的Er:LN復(fù)合靶,是Er2O3與LN雙靶交替與脈沖激光作用沉積Er:LN薄膜,從而可以靈活控制稀土離子的摻雜濃度。探究了襯底溫度、氧壓、鉺靶生長(zhǎng)時(shí)間對(duì)Er:LN薄膜質(zhì)量的影響,發(fā)現(xiàn)襯底溫度越高、氧壓越大薄膜結(jié)晶質(zhì)量相對(duì)越好,當(dāng)沉積薄膜厚度為800nm時(shí)薄膜結(jié)晶質(zhì)量降低為多晶。測(cè)試樣品的光致熒光性質(zhì)時(shí)選用波長(zhǎng)為532nm激光泵浦樣品,實(shí)驗(yàn)開(kāi)始前在樣品腔進(jìn)光口處放置840nm濾光片有效排除倍頻光的影響,測(cè)試結(jié)果顯示樣品在1537nm處有很強(qiáng)的光致發(fā)光峰,Er:LN薄膜結(jié)晶質(zhì)量很好。3.利用PLD技術(shù)在SiO2/Si(111)襯底上制備了擇優(yōu)取向的Eu:ZnO薄膜,探究了襯底溫度、氧壓、脈沖激光重復(fù)頻率、生長(zhǎng)時(shí)間對(duì)薄膜質(zhì)量的影響。襯底溫度300℃、氧壓1.0Pa、脈沖激光重復(fù)頻率5Hz薄膜結(jié)晶質(zhì)量較好,沉積時(shí)間越長(zhǎng)樣品的(002)衍射峰越強(qiáng),薄膜厚度對(duì)Eu:ZnO薄膜的結(jié)晶質(zhì)量影響不是很明顯。用氙燈泵浦樣品,泵浦波長(zhǎng)為466nm、樣品前放置510nm波長(zhǎng)的濾光片,在618nm處檢測(cè)到樣品的光致發(fā)光峰強(qiáng)度比靶材的還要高,說(shuō)明沉積的Eu:ZnO薄膜結(jié)晶質(zhì)量比較高。
[Abstract]:Lithium niobate (LiNbO3) has large ferroelectric, piezoelectric, electro-optic, acousto-optic, nonlinear optical properties, and can be widely used in the fabrication of optical waveguide devices such as optical waveguide modulator, sensor, polarizer and so on. Optical devices are an important part of integrated optics. The devices made by thin film materials are better than bulk materials in many aspects. Therefore, silicon is used in silicon The deposition of LiNbO3 (LN) film on the substrate and its properties will play a certain role in the development of integrated optical devices and optical communication. Zinc Oxide (ZnO) has large band gap, high exciton binding energy is a good doping matrix, can be used in the field of lighting, solar cells, conductive films and so on. Rare earth ions have rich energy. It has a wide range of luminescence and is widely used in the transition 4I13/2 to 4I15/2 emission wavelength of the active device.Er ion. The emission wavelength is about 1.54 mu m. This band corresponds to the lowest loss transmission window of the planar waveguide. The emission wavelengths of the europium ions in 5D0 to 7I2 at normal temperature are 618nm, and are mostly used in the fields of signal lamps, probes, solid laser materials, medical treatment and so on. Now, the pulse laser deposition technology has been used to prepare the active oxide thin films with low transmission loss and high fluorescence intensity. It is not much to control the doping concentration of rare earth ions in the thin films and to study the influence of the concentration of rare earth ions on the quality of the thin films. A variety of preferred orientation oxide films were prepared on SiO2/Si (111) substrate by changing the experimental deposition conditions. The samples were characterized by X ray diffractometer, step meter, prism coupling equipment, fluorescence spectrometer, high magnification mirror and cold field emission scanning electron microscope. The following is the specific research content and research results: 1. profit. The preferred orientation LN films were deposited on SiO2/Si (111) substrate by PLD technology. The effects of O2/Ar atmosphere, substrate temperature, oxygen pressure, pulse laser repetition rate and annealing treatment on the film quality were investigated. The optimum test parameters for the preparation of preferred orientation LN films were obtained by using this device: substrate temperature 500, substrate range 4cm, excitation. The optical repetition frequency 3Hz, oxygen pressure 2.0Pa, 800 C external annealing treatment, LN ceramic target. Testing the properties of thin film optical waveguide, the surface morphology shows that the surface of the sample with short deposition time is very smooth, the grain is compact but the thickness (200nm) thin light is easy to enter the substrate, it is difficult to form the waveguide; the thickness of the sample with long deposition time is enough to form the waveguide, but it is enough to form the waveguide, but the thickness of the deposition time is enough to form the waveguide, but the thickness of the sample is enough to form the waveguide, but the thickness of the deposition time is enough to form the waveguide, but the thickness of the deposition time is enough to form the waveguide, but the thickness of the deposition time is enough to form the waveguide, but the thickness of the sample is enough to form the waveguide but it is enough to form the waveguide, but the thickness of the sample with long deposition time is enough to form the waveguide but There are a lot of cracks on the surface of the film. At present, the subject group has not coupled the optical coupling into the sample and.2. using PLD technology to prepare a number of preferred orientation Er:LN films on the SiO2/Si (111) substrate by changing the experimental conditions. The selected sedimentary target is not a fixed proportion of Er:LN composite target, which is the alternate and pulse laser of the Er2O3 and LN double targets. With the deposition of Er:LN film, the doping concentration of rare earth ions can be controlled flexibly. The influence of substrate temperature, oxygen pressure and erbium target growth time on the quality of Er:LN film is explored. It is found that the higher the temperature of the substrate, the higher the oxygen pressure is, the better the crystalline quality of the film is. When the thickness of the film is 800nm, the crystalline quality of the thin film is reduced to polycrystalline. 532nm laser pumped samples were selected for the photofluorescence properties. Before the experiment, 840nm filters were placed in the cavity of the sample cavity to effectively eliminate the influence of frequency doubling light. The test results showed that the sample had a strong photoluminescence peak at 1537nm, and the crystal quality of the Er:LN film was very good.3. and PLD technology was used to prepare the SiO2/Si (111) substrate. The influence of substrate temperature, oxygen pressure, pulse laser repetition frequency and growth time on film quality is investigated. The crystallization quality of 5Hz film is 300, 1.0Pa and pulse laser repetition frequency 5Hz film is better. The longer the deposition time is, the higher the (002) diffraction peak, the film thickness has no effect on the crystal quality of Eu:ZnO film. It is obvious that the sample with xenon lamp pump, the pump wavelength is 466nm, the 510nm wavelength filter is placed before the sample, and the photoluminescence peak intensity of the sample is higher than that of the target at 618nm, indicating that the crystalline quality of the deposited Eu:ZnO film is higher.

【學(xué)位授予單位】：曲阜師范大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：O484

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