本文選題：薄膜基底結(jié)構(gòu) + CGS光測(cè)實(shí)驗(yàn)技術(shù)��； 參考：《蘭州大學(xué)》2017年碩士論文

【摘要】：現(xiàn)代科學(xué)技術(shù)的迅猛發(fā)展,促使各類(lèi)高度集成、多功能化的器件層出不窮。薄膜基底結(jié)構(gòu)因具有這類(lèi)特征日漸成為研究的熱點(diǎn)之一,在微電子、光學(xué)、物理學(xué)和材料學(xué)研究領(lǐng)域得到了越來(lái)越廣泛的應(yīng)用,在集成電路、微機(jī)電系統(tǒng)(MEMS)等微器件方面的應(yīng)用有力的促進(jìn)了人類(lèi)的生產(chǎn)生活。對(duì)于薄膜基底材料而言,通常由納米尺度的薄膜和微米尺度的基底組合而成,其結(jié)構(gòu)相對(duì)比較簡(jiǎn)單。由薄膜基底材料之間晶格常數(shù)不匹配產(chǎn)生的錯(cuò)配應(yīng)變及外界非均溫度分布引起的薄膜變形研究成為力學(xué)學(xué)科重要的研究方向之一。早在1909年,Stoney建立了薄膜應(yīng)力與曲率之間的關(guān)系式,從而奠定了薄膜應(yīng)力研究的基本框架,即通過(guò)薄膜曲率的測(cè)量來(lái)計(jì)算其全場(chǎng)應(yīng)力分布。后來(lái),大量學(xué)者通過(guò)放松Stoney基本假設(shè)實(shí)現(xiàn)了對(duì)Stoney公式的擴(kuò)展,但是截至目前這些研究均主要考慮薄膜在準(zhǔn)靜態(tài)情形下的力學(xué)行為,而對(duì)于薄膜基底結(jié)構(gòu)的振動(dòng)特性研究鮮有涉及,成為薄膜基底結(jié)構(gòu)器件安全設(shè)計(jì)所面臨的困難。為此,本文建立了薄膜基底結(jié)構(gòu)在軸對(duì)稱(chēng)和非軸對(duì)稱(chēng)情形下的自由振動(dòng)方程,得到了薄膜應(yīng)力關(guān)于曲率的解析表達(dá)式。隨后,以高溫超導(dǎo)薄膜為例,采用低溫環(huán)境下激光剪切干涉(CGS)技術(shù)和本文所建立的薄膜應(yīng)力與曲率之間的理論關(guān)系,首次獲得了脈沖磁場(chǎng)作用后超導(dǎo)薄膜全場(chǎng)應(yīng)力隨時(shí)間的演化特征,為后期深入研究超導(dǎo)薄膜在電磁場(chǎng)中的力學(xué)響應(yīng)提供了基礎(chǔ)。本論文的主要工作如下:(1).通過(guò)考慮界面切應(yīng)力,建立了薄膜基底結(jié)構(gòu)在軸對(duì)稱(chēng)情形下自由振動(dòng)方程,求得了薄膜應(yīng)力關(guān)于曲率的解析表達(dá)式,并且針對(duì)振動(dòng)方程,討論了其撓度振型解以及相應(yīng)固有頻率。(2).通過(guò)考慮界面切應(yīng)力,建立了薄膜基底結(jié)構(gòu)在非軸對(duì)稱(chēng)情形下的自由振動(dòng)方程,求得了薄膜位移表達(dá)式,應(yīng)力表達(dá)式,界面切應(yīng)力表達(dá)式,并且求給出了薄膜應(yīng)力關(guān)于曲率的理論關(guān)系式。(3).利用低溫下激光剪切干涉技術(shù),實(shí)時(shí)測(cè)量了超導(dǎo)薄膜在受到電磁脈沖作用后的全場(chǎng)曲率變化,采用本文推導(dǎo)所得的薄膜曲率理論關(guān)系式,首次獲得了超導(dǎo)薄膜全場(chǎng)應(yīng)力隨時(shí)間變化情況,并且針對(duì)測(cè)量結(jié)果做了相關(guān)分析以及討論。
[Abstract]:With the rapid development of modern science and technology, various kinds of highly integrated and multifunctional devices emerge in endlessly. The thin film substrate structure has become one of the hotspots in the field of microelectronics, optics, physics and material science, and has been widely used in integrated circuits. The application of MEMS and other microdevices has greatly promoted the production and life of human beings. For thin film substrate, it is usually composed of nanoscale film and micron scale substrate, and its structure is relatively simple. The mismatch strain caused by the mismatch of lattice constants between the substrate materials and the deformation caused by the inhomogeneous temperature distribution have become one of the important research directions in the field of mechanics. As early as 1909, Stoney established the relationship between the stress and curvature of the film, thus laid a basic framework for the study of the film stress, that is to calculate the full field stress distribution by measuring the curvature of the film. Later, a large number of scholars extended the Stoney formula by relaxing the Stoney basic hypothesis, but up to now these studies have mainly considered the mechanical behavior of thin films under quasi-static conditions. However, the research on the vibration characteristics of the thin film substrate structure is seldom involved, which is the difficulty in the safety design of the thin film substrate structure device. In this paper, the free vibration equations of the thin film substrate structure under axisymmetric and non-axisymmetric conditions are established, and the analytical expression of the film stress on curvature is obtained. Then, taking the HTS thin film as an example, the laser shearing interference (CGS) technique at low temperature and the theoretical relationship between the stress and curvature of the thin film established in this paper are adopted. The evolution characteristics of the field stress with time after pulsed magnetic field are obtained for the first time, which provides a basis for the further study of the mechanical response of the superconducting film in the electromagnetic field. The main work of this thesis is as follows: 1. By considering the interfacial shear stress, the free vibration equation of thin film substrate structure under axisymmetric condition is established, and the analytical expression of the film stress about curvature is obtained, and aiming at the vibration equation, The deflection mode solution and the corresponding natural frequency are discussed. By considering the interfacial shear stress, the free vibration equation of the thin film substrate structure under the condition of non-axisymmetric is established, and the expressions of displacement, stress, interfacial shear stress are obtained. The theoretical relation of film stress on curvature is obtained. By using laser shearing interferometry at low temperature, the full-field curvature of superconducting films subjected to electromagnetic pulses was measured in real time. The theoretical formula of film curvature was derived in this paper. For the first time, the variation of the field stress with time is obtained, and the correlation analysis and discussion are made for the measured results.
【學(xué)位授予單位】：蘭州大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：O484.2

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