本文選題：金屬表面等離激元 + ZnO��； 參考：《浙江大學》2014年碩士論文

【摘要】：ZnO具有較大的禁帶寬度及激子束縛能,有望成為一種可靠的新型發(fā)光材料。對ZnO禁帶寬度進行有效調控及提高ZnO基材料的發(fā)光效率,是促進ZnO在光電領域應用的必要條件。目前,利用金屬表面等離激元增強半導體材料的發(fā)光性質已經成為一個新的研究熱點。基于上述幾點,本文分別以ZnO、ZnCdO薄膜和ZnO/ZnMgO多量子阱為研究對象,利用金屬表面等離激元增強其帶邊發(fā)光,并對發(fā)光增強機理進行了深入探究。主要工作內容如下： 利用脈沖激光沉積方法制備ZnO和ZnCdO薄膜。通過一系列手段對其進行結晶性質、化學成分及發(fā)光性能表征。生長的ZnO及ZnCdO薄膜有明顯的帶邊發(fā)光,且缺陷發(fā)光受到抑制,表現出較好的結晶質量。通過摻入適量的Cd元素,有效地調控了ZnO的發(fā)光峰位。 利用電子束蒸發(fā)方法制備金屬薄膜并對其表面等離激元特性進行了探索。結合快速熱退火工藝,利用反浸潤法制備形成A1納米顆粒。利用電子束蒸發(fā)結合標準光刻工藝制備金屬有序微米陣列。同時,我們還利用聚苯乙烯(PS)球模板結合電子束蒸發(fā)工藝制備金屬納米陣列,實現了對金屬陣列納米尺寸的有效調控。 利用反浸潤法制備Al納米顆粒,分別實現了ZnO薄膜和ZnO/ZnMgO多量子阱室溫下7倍和1.5倍的室溫PL增強效果。探究了金屬厚度對發(fā)光增強的影響,通過SEM、XPS及變溫PL測試,探究了發(fā)光增強的機理。 探究了采用新型ZnCdO/Metal/Substrate結構來增強ZnCdO材料發(fā)光性能的方法,并使ZnCdO的發(fā)光強度在Ag薄膜和微米圖形化陣列的情況下分別增強了7.1倍和21.2倍。實驗證明,通過在ZnO和襯底間插入金屬層,能更好地避免金屬對光的反射作用及金屬陣列制備階段對發(fā)光薄膜的破壞,從而實現更高倍數的發(fā)光增強。
[Abstract]:Because of its wide band gap and exciton binding energy, ZnO is expected to be a reliable new luminescent material. The effective regulation of ZnO bandgap and the improvement of luminescence efficiency of ZnO based materials are the necessary conditions to promote the application of ZnO in optoelectronic field. At present, the enhancement of luminescent properties of semiconductor materials by using metal surface isopherons has become a new research hotspot. Based on the above points, the ZnO / ZnCdO thin films and ZnO/ZnMgO multiple quantum wells were used to enhance the band-edge luminescence by using the isoexcitators on the metal surface, and the mechanism of the luminescence enhancement was investigated. The main tasks are as follows: ZnO and ZnCdO thin films were prepared by pulsed laser deposition. The crystalline properties, chemical composition and luminescence properties were characterized by a series of methods. The growth of ZnO and ZnCdO thin films has obvious band-edge luminescence, and the defect luminescence is inhibited, showing good crystallization quality. The luminescence peak of ZnO was effectively regulated by adding appropriate amount of CD. Electron beam evaporation (EBE) method was used to prepare metal thin films and the surface isophosphoric properties were investigated. In combination with rapid thermal annealing (RTA) process, Al nanoparticles were prepared by reverse soakage method. Metal ordered micron arrays were prepared by electron beam evaporation and standard lithography. At the same time, we also prepared metal nanoarrays by using polystyrene (PS) sphere template and electron beam evaporation (EBE) process, which can effectively control the nanoscale size of metal arrays. Al nanoparticles were prepared by reverse soakage method. The PL enhancement effects of ZnO films and ZnO/ZnMgO multiple quantum wells at room temperature were 7 and 1.5 times, respectively. The effect of metal thickness on luminescence enhancement was investigated, and the mechanism of luminescence enhancement was investigated by means of SEMXPS and variable temperature PL measurements. The new ZnCdO/Metal/Substrate structure was used to enhance the luminescent properties of ZnCdO materials, and the luminescence intensity of ZnCdO was increased by 7.1 times and 21.2 times respectively in the case of Ag thin films and micron patterned arrays. The experimental results show that by inserting metal layer between ZnO and substrate, the reflection of metal to light and the destruction of luminescent film during the preparation of metal array can be avoided better, and thus a higher multiple of luminescence enhancement can be realized.
【學位授予單位】：浙江大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TB383.2

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相關期刊論文 前1條

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本文編號：1851659